DOI: 10.1116/1.1740761. Oxide formation during ion bombardment of small silicon structures

Oxide formation during ion bombardment of small silicon structures

10.1116/1.1740761

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (20)

Abstract

The kinetics of high dose oxygen implantation and of surface sputtering in silicon are investigated by atomic force microscopy, transmission electron microscopy, transmission electron holography, and electron energy-loss spectroscopy. The implantation was performed into accurately defined submicrometer areas. The behavior of the erosion rate as a function of the implantation dose proved to be nonmonotonic. After native oxide sputtering, a period dominated by (i) implantation of oxygen and (ii) induced oxide formation with volume increase takes place, causing a maximum surface step around the bombarded area of about 1.1 to 1.3 nm at bombardment doses below 2×1016 O+ cm−2. Subsequently, higher doses cause a sputtering of the surface with a sputter yield of about 0.32 Si atoms/O+. Electron holography revealed the double layer character of the implanted region, and electron energy-loss spectroscopy, especially near the relevant Si-L23 ionization edge, identified these two layers which are (i) amorphous silicon oxide and (ii) amorphized silicon. Electron energy-loss line scans show the oxygen distribution inside the implanted areas with a lateral resolution of about 1–2 nm. It was found that the interface between the oxidized layer and the amorphized silicon sharpens with increasing implantation dose.

Bibliography

KrÃ¼ger, D., Formanek, P., Pippel, E., Woltersdorf, J., Bugiel, E., Kurps, R., & Weidner, G. (2004). Oxide formation during ion bombardment of small silicon structures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 22(3), 1179â1183.

Authors 7

D. Krüger (first)
P. Formanek (additional)
E. Pippel (additional)
J. Woltersdorf (additional)
E. Bugiel (additional)
R. Kurps (additional)
G. Weidner (additional)

References 11 Referenced 3

10.1063/1.117802 / Appl. Phys. Lett. (1996)
10.1143/JJAP.30.2427 / Jpn. J. Appl. Phys., Part 1 (1991)
10.1098/rsta.1996.0126 / Philos. Trans. R. Soc. London, Ser. A (1996)
10.1016/0921-5107(92)90264-A / Mater. Sci. Eng., B (1992)
{'key': '2023071609543611300_r5'}
10.1016/S1044-5803(99)00003-0 / Mater. Charact. (1999)
10.1046/j.1365-2818.1996.73073.x / J. Microsc. (1996)
10.1023/A:1026748027434 / J. Mater. Sci. Lett. (2000)
{'key': '2023071609543611300_r9', 'first-page': '1', 'volume': '63', 'year': '1991', 'journal-title': 'Philos. Mag. A'} / Philos. Mag. A (1991)
{'key': '2023071609543611300_r10'}
10.1016/0304-3991(94)90040-X / Ultramicroscopy (1994)

Dates

Type	When
Created	21 years, 1 month ago (July 8, 2004, 6:19 p.m.)
Deposited	2 years, 1 month ago (July 16, 2023, 5:54 a.m.)
Indexed	2 years, 1 month ago (July 16, 2023, 6:10 a.m.)
Issued	21 years, 4 months ago (May 1, 2004)
Published	21 years, 4 months ago (May 1, 2004)
Published Online	21 years, 3 months ago (May 26, 2004)
Published Print	21 years, 4 months ago (May 1, 2004)

Funders 0

None

BibTeX

@article{Kr_ger_2004, title={Oxide formation during ion bombardment of small silicon structures}, volume={22}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.1740761}, DOI={10.1116/1.1740761}, number={3}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Krüger, D. and Formanek, P. and Pippel, E. and Woltersdorf, J. and Bugiel, E. and Kurps, R. and Weidner, G.}, year={2004}, month=may, pages={1179–1183} }

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