DOI: 10.1116/1.1640396. Milling of submicron channels on gold layer using double charged arsenic ion beam

Milling of submicron channels on gold layer using double charged arsenic ion beam

10.1116/1.1640396

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (20)

Abstract

The capability of using a focused ion beam (FIB) for milling of submicron channel structures on a gold layer is investigated. A double-charged arsenic (As2+) FIB is adopted to assess the effect of the dwell time on the final profiles of the milled structures. A single-pass milling, which creates relatively shallow microchannels, is conducted in order to estimate the corresponding milling yields. The condition to provide a uniform ion flux in milling is first studied. The procedure on conducting the milling experiment is then presented. The atomic force microscope (AFM) is applied for measuring the profiles of the milled channels. Based on the AFM measurements, the milling yields have been estimated and compared with the sputtering yields predicted by a more sophisticated numerical simulation. The milling yield for the relatively shallow microchannels presently considered has been discovered to be roughly equal to the predicted normal-incidence sputtering yield. Consistence has also been found as the present findings have been compared with other channel milling studies, which had used different ion beams and target materials. FIB milling has been shown to be an effective tool for making submicron channels in gold layers.

Bibliography

Tseng, A. A., Insua, I. A., Park, J. S., Li, B., & Vakanas, G. P. (2004). Milling of submicron channels on gold layer using double charged arsenic ion beam. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 22(1), 82â89.

Authors 5

Ampere A. Tseng (first)
Ivan A. Insua (additional)
Jong S. Park (additional)
Bo Li (additional)
George P. Vakanas (additional)

References 26 Referenced 20

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Dates

Type	When
Created	21 years, 6 months ago (Feb. 5, 2004, 6:02 p.m.)
Deposited	2 years, 1 month ago (July 16, 2023, 3:06 a.m.)
Indexed	1 year, 10 months ago (Oct. 7, 2023, 4:09 p.m.)
Issued	21 years, 7 months ago (Jan. 1, 2004)
Published	21 years, 7 months ago (Jan. 1, 2004)
Published Online	21 years, 7 months ago (Jan. 14, 2004)
Published Print	21 years, 7 months ago (Jan. 1, 2004)

Funders 0

None

BibTeX

@article{Tseng_2004, title={Milling of submicron channels on gold layer using double charged arsenic ion beam}, volume={22}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.1640396}, DOI={10.1116/1.1640396}, number={1}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Tseng, Ampere A. and Insua, Ivan A. and Park, Jong S. and Li, Bo and Vakanas, George P.}, year={2004}, month=jan, pages={82–89} }

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