DOI: 10.1116/1.1627331. Deep level defects and doping in high Al mole fraction AlGaN

Deep level defects and doping in high Al mole fraction AlGaN

10.1116/1.1627331

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (20)

Abstract

We have used depth-dependent cathodoluminescence spectroscopy (CLS) and secondary ion mass spectrometry (SIMS) to investigate the nature of deep level defects and their effect on Si doping of high Al mole fraction (25%–100%) AlGaN. SIMS results provide correlations between AlGaN deep level emissions from CLS and elemental impurities distributed through the epitaxial bulk films. The highest Al mole fraction (xAl) samples exhibit deep level optical emissions that correlate with O and C impurities measured by SIMS. These O impurities appear to introduce donors at low and intermediate Al compositions versus deep levels in Al-rich alloys. The CLS energy onset of near band edge peak emissions track the b=1 theoretical band gap for 0⩽xAl⩽0.98 while their peak emissions deviate monotonically. Temperature-dependent CLS reveal an activation energy decrease of the near band edge emission intensity from 54 to 36 meV for xAl&gt;∼0.80. The absence of free carriers for xAl&gt;0.80 is consistent with Si donor compensation due to deep levels associated with oxygen.

Bibliography

Bradley, S. T., Goss, S. H., Brillson, L. J., Hwang, J., & Schaff, W. J. (2003). Deep level defects and doping in high Al mole fraction AlGaN. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 21(6), 2558â2563.

Authors 5

S. T. Bradley (first)
S. H. Goss (additional)
L. J. Brillson (additional)
J. Hwang (additional)
W. J. Schaff (additional)

References 26 Referenced 47

10.1063/1.115805 / Appl. Phys. Lett. (1996)
10.1063/1.1534395 / Appl. Phys. Lett. (2002)
10.1103/PhysRevB.61.R16283 / Phys. Rev. B (2000)
10.1103/PhysRevB.57.R2033 / Phys. Rev. B (1998)
10.1007/BF02669527 / J. Electron. Mater. (1991)
10.1063/1.124195 / Appl. Phys. Lett. (1999)
10.1111/j.1151-2916.1990.tb06444.x / J. Am. Ceram. Soc. (1990)
10.1116/1.589777 / J. Vac. Sci. Technol. B (1998)
{'key': '2023070922195790000_r9'}
10.1002/sca.4950190101 / Scanning (1997)
{'key': '2023070922195790000_r11', 'first-page': '285', 'volume': '11', 'year': '1982', 'journal-title': 'Prog. Solid State Chem.'} / Prog. Solid State Chem. (1982)
10.1063/1.121039 / Appl. Phys. Lett. (1998)
10.1063/1.1508420 / J. Appl. Phys. (2002)
10.1063/1.371242 / J. Appl. Phys. (1999)
{'key': '2023070922195790000_r15'}
10.1016/S0022-0248(02)01753-0 / J. Cryst. Growth (2002)
10.1103/PhysRevB.47.55 / Phys. Rev. B (1993)
10.1103/PhysRevB.22.4900 / Phys. Rev. B (1980)
{'key': '2023070922195790000_r19', 'first-page': '458', 'volume': '227–228', 'year': '2001', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (2001)
10.1016/S0921-5107(97)00165-7 / Mater. Sci. Eng., B (1997)
10.1063/1.1499738 / Appl. Phys. Lett. (2002)
10.1063/1.1492316 / Appl. Phys. Lett. (2002)
10.1063/1.363128 / J. Appl. Phys. (1996)
10.1063/1.1320853 / Appl. Phys. Lett. (2000)
10.1063/1.119176 / Appl. Phys. Lett. (1997)
10.1063/1.1377858 / Appl. Phys. Lett. (2001)

Dates

Type	When
Created	21 years, 8 months ago (Dec. 19, 2003, 6:05 p.m.)
Deposited	1 year, 7 months ago (Jan. 11, 2024, 1:21 p.m.)
Indexed	1 month, 3 weeks ago (July 5, 2025, 5:04 a.m.)
Issued	21 years, 9 months ago (Nov. 1, 2003)
Published	21 years, 9 months ago (Nov. 1, 2003)
Published Online	21 years, 9 months ago (Nov. 25, 2003)
Published Print	21 years, 9 months ago (Nov. 1, 2003)

Funders 0

None

BibTeX

@article{Bradley_2003, title={Deep level defects and doping in high Al mole fraction AlGaN}, volume={21}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.1627331}, DOI={10.1116/1.1627331}, number={6}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Bradley, S. T. and Goss, S. H. and Brillson, L. J. and Hwang, J. and Schaff, W. J.}, year={2003}, month=nov, pages={2558–2563} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        5
      ]
    ],
    "date-time": "2025-07-05T09:04:06Z",
    "timestamp": 1751706246986
  },
  "reference-count": 26,
  "publisher": "American Vacuum Society",
  "issue": "6",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2003,
        11,
        1
      ]
    ]
  },
  "abstract": "<jats:p>We have used depth-dependent cathodoluminescence spectroscopy (CLS) and secondary ion mass spectrometry (SIMS) to investigate the nature of deep level defects and their effect on Si doping of high Al mole fraction (25%\u2013100%) AlGaN. SIMS results provide correlations between AlGaN deep level emissions from CLS and elemental impurities distributed through the epitaxial bulk films. The highest Al mole fraction (xAl) samples exhibit deep level optical emissions that correlate with O and C impurities measured by SIMS. These O impurities appear to introduce donors at low and intermediate Al compositions versus deep levels in Al-rich alloys. The CLS energy onset of near band edge peak emissions track the b=1 theoretical band gap for 0\u2a7dxAl\u2a7d0.98 while their peak emissions deviate monotonically. Temperature-dependent CLS reveal an activation energy decrease of the near band edge emission intensity from 54 to 36 meV for xAl&amp;gt;\u223c0.80. The absence of free carriers for xAl&amp;gt;0.80 is consistent with Si donor compensation due to deep levels associated with oxygen.</jats:p>",
  "DOI": "10.1116/1.1627331",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        12,
        19
      ]
    ],
    "date-time": "2003-12-19T23:05:24Z",
    "timestamp": 1071875124000
  },
  "page": "2558-2563",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 47,
  "title": "Deep level defects and doping in high Al mole fraction AlGaN",
  "prefix": "10.1116",
  "volume": "21",
  "author": [
    {
      "given": "S. T.",
      "family": "Bradley",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, The Ohio State University, Columbus, Ohio\u200943210"
        }
      ]
    },
    {
      "given": "S. H.",
      "family": "Goss",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, The Ohio State University, Columbus, Ohio\u200943210"
        }
      ]
    },
    {
      "given": "L. J.",
      "family": "Brillson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering, The Ohio State University, Columbus, Ohio\u200943210"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Hwang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York\u200914853"
        }
      ]
    },
    {
      "given": "W. J.",
      "family": "Schaff",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York\u200914853"
        }
      ]
    }
  ],
  "member": "20",
  "published-online": {
    "date-parts": [
      [
        2003,
        11,
        25
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070922195790000_r1",
      "doi-asserted-by": "crossref",
      "first-page": "3144",
      "DOI": "10.1063/1.115805",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "5192",
      "DOI": "10.1063/1.1534395",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r3",
      "doi-asserted-by": "crossref",
      "first-page": "R16283",
      "DOI": "10.1103/PhysRevB.61.R16283",
      "volume": "61",
      "year": "2000",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070922195790000_r4",
      "doi-asserted-by": "crossref",
      "first-page": "R2033",
      "DOI": "10.1103/PhysRevB.57.R2033",
      "volume": "57",
      "year": "1998",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070922195790000_r5",
      "doi-asserted-by": "crossref",
      "first-page": "621",
      "DOI": "10.1007/BF02669527",
      "volume": "20",
      "year": "1991",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2023070922195790000_r6",
      "doi-asserted-by": "crossref",
      "first-page": "3833",
      "DOI": "10.1063/1.124195",
      "volume": "74",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r7",
      "doi-asserted-by": "crossref",
      "first-page": "3238",
      "DOI": "10.1111/j.1151-2916.1990.tb06444.x",
      "volume": "73",
      "year": "1990",
      "journal-title": "J. Am. Ceram. Soc."
    },
    {
      "key": "2023070922195790000_r8",
      "doi-asserted-by": "crossref",
      "first-page": "197",
      "DOI": "10.1116/1.589777",
      "volume": "16",
      "year": "1998",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023070922195790000_r9"
    },
    {
      "key": "2023070922195790000_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1002/sca.4950190101",
      "volume": "19",
      "year": "1997",
      "journal-title": "Scanning"
    },
    {
      "key": "2023070922195790000_r11",
      "first-page": "285",
      "volume": "11",
      "year": "1982",
      "journal-title": "Prog. Solid State Chem."
    },
    {
      "key": "2023070922195790000_r12",
      "doi-asserted-by": "crossref",
      "first-page": "1501",
      "DOI": "10.1063/1.121039",
      "volume": "72",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r13",
      "doi-asserted-by": "crossref",
      "first-page": "4837",
      "DOI": "10.1063/1.1508420",
      "volume": "92",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070922195790000_r14",
      "doi-asserted-by": "crossref",
      "first-page": "3721",
      "DOI": "10.1063/1.371242",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070922195790000_r15"
    },
    {
      "key": "2023070922195790000_r16",
      "doi-asserted-by": "crossref",
      "first-page": "287",
      "DOI": "10.1016/S0022-0248(02)01753-0",
      "volume": "246",
      "year": "2002",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023070922195790000_r17",
      "doi-asserted-by": "crossref",
      "first-page": "55",
      "DOI": "10.1103/PhysRevB.47.55",
      "volume": "47",
      "year": "1993",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070922195790000_r18",
      "doi-asserted-by": "crossref",
      "first-page": "4900",
      "DOI": "10.1103/PhysRevB.22.4900",
      "volume": "22",
      "year": "1980",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070922195790000_r19",
      "first-page": "458",
      "volume": "227\u2013228",
      "year": "2001",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023070922195790000_r20",
      "doi-asserted-by": "crossref",
      "first-page": "212",
      "DOI": "10.1016/S0921-5107(97)00165-7",
      "volume": "50",
      "year": "1997",
      "journal-title": "Mater. Sci. Eng., B"
    },
    {
      "key": "2023070922195790000_r21",
      "doi-asserted-by": "crossref",
      "first-page": "1255",
      "DOI": "10.1063/1.1499738",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r22",
      "doi-asserted-by": "crossref",
      "first-page": "1038",
      "DOI": "10.1063/1.1492316",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r23",
      "doi-asserted-by": "crossref",
      "first-page": "2960",
      "DOI": "10.1063/1.363128",
      "volume": "80",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070922195790000_r24",
      "doi-asserted-by": "crossref",
      "first-page": "2873",
      "DOI": "10.1063/1.1320853",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r25",
      "doi-asserted-by": "crossref",
      "first-page": "3377",
      "DOI": "10.1063/1.119176",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070922195790000_r26",
      "doi-asserted-by": "crossref",
      "first-page": "3630",
      "DOI": "10.1063/1.1377858",
      "volume": "78",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/21/6/2558/8208003/2558_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/21/6/2558/8208003/2558_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        1,
        11
      ]
    ],
    "date-time": "2024-01-11T18:21:32Z",
    "timestamp": 1704997292000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jvb/article/21/6/2558/468195/Deep-level-defects-and-doping-in-high-Al-mole"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2003,
        11,
        1
      ]
    ]
  },
  "references-count": 26,
  "journal-issue": {
    "issue": "6",
    "published-print": {
      "date-parts": [
        [
          2003,
          11,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.1627331",
  "relation": {},
  "ISSN": [
    "1071-1023",
    "1520-8567"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2003,
        11
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2003,
        11,
        1
      ]
    ]
  }
}