DOI: 10.1116/1.1520564. Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography

Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography

10.1116/1.1520564

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (20)

Abstract

T-gates are commonly used in high frequency low noise transistors on III–V materials since they provide a combination of short gate length and low gate resistance. Nanoimprint lithography can produce minimum pattern feature sizes equivalent to those attainable by high resolution electron beam lithography and it has potential advantages in terms of speed and cost. The imprint lithography step must be reliable and compatible with existing device process flows. In this article we describe a bilayer resist imprinting procedure for the fabrication of 120 nm T-gates for high electron mobility transistors. The results of transistor dc characterization are also presented and are similar to those obtained for transistors fabricated on the same material with gates realized by electron beam lithography.

Bibliography

Chen, Y., Macintyre, D., Boyd, E., Moran, D., Thayne, I., & Thoms, S. (2002). Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 20(6), 2887â2890.

Authors 6

Y. Chen (first)
D. Macintyre (additional)
E. Boyd (additional)
D. Moran (additional)
I. Thayne (additional)
S. Thoms (additional)

References 14 Referenced 21

10.1116/1.591119 / J. Vac. Sci. Technol. B (1999)
10.1116/1.1321279 / J. Vac. Sci. Technol. B (2000)
{'key': '2023080905574949600_r3', 'first-page': '7050', 'volume': '39', 'year': '2000', 'journal-title': 'Jpn. J. Appl. Phys., Part 1'} / Jpn. J. Appl. Phys., Part 1 (2000)
10.1116/1.584915 / J. Vac. Sci. Technol. B (1990)
10.1063/1.1391400 / Appl. Phys. Lett. (2001)
10.1063/1.1375006 / Appl. Phys. Lett. (2001)
10.1116/1.1417552 / J. Vac. Sci. Technol. B (2001)
{'key': '2023080905574949600_r8'}
10.1116/1.588745 / J. Vac. Sci. Technol. B (1996)
{'key': '2023080905574949600_r10'}
10.1016/S0167-9317(01)00569-X / Microelectron. Eng. (2001)
10.1063/1.125613 / Appl. Phys. Lett. (2000)
10.1063/1.1406561 / Appl. Phys. Lett. (2001)
10.1116/1.588543 / J. Vac Sci. Technol. B (1996)

Dates

Type	When
Created	22 years, 8 months ago (Dec. 12, 2002, 11:39 a.m.)
Deposited	2 years ago (Aug. 9, 2023, 2:23 a.m.)
Indexed	1 year ago (Aug. 11, 2024, 1:12 a.m.)
Issued	22 years, 9 months ago (Nov. 1, 2002)
Published	22 years, 9 months ago (Nov. 1, 2002)
Published Online	22 years, 8 months ago (Dec. 9, 2002)
Published Print	22 years, 9 months ago (Nov. 1, 2002)

Funders 0

None

BibTeX

@article{Chen_2002, title={Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography}, volume={20}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.1520564}, DOI={10.1116/1.1520564}, number={6}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Chen, Y. and Macintyre, D. and Boyd, E. and Moran, D. and Thayne, I. and Thoms, S.}, year={2002}, month=nov, pages={2887–2890} }

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