DOI: 10.1116/1.1458950. Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

10.1116/1.1458950

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

We present a methodology for the quantitative estimation of nitrogen in ultrathin oxynitrides by means of time of flight secondary ion mass spectrometry (TOF-SIMS) and x-ray photoelectron spectroscopy (XPS). We consider an innovative approach to TOF-SIMS depth profiling, by elemental distribution of single species as sum of peaks containing such species. This approach is very efficient in overcoming matrix effect arising when quantifying elements were distributed in silicon and silicon oxide. We use XPS to calibrate TOF-SIMS and to obtain quantitative information on nitrogen distribution in oxynitride thin layers. In the method we propose we process TOF-SIMS and XPS data simultaneously to obtain a quantitative depth profile.

Bibliography

Ferrari, S., Perego, M., & Fanciulli, M. (2002). Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 20(3), 616â621.

Authors 3

S. Ferrari (first)
M. Perego (additional)
M. Fanciulli (additional)

References 27 Referenced 10

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Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:34 a.m.)
Deposited	1 year, 8 months ago (Jan. 5, 2024, 4:32 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 3:30 p.m.)
Issued	23 years, 4 months ago (May 1, 2002)
Published	23 years, 4 months ago (May 1, 2002)
Published Online	23 years, 3 months ago (May 7, 2002)
Published Print	23 years, 4 months ago (May 1, 2002)

Funders 0

None

BibTeX

@article{Ferrari_2002, title={Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen}, volume={20}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.1458950}, DOI={10.1116/1.1458950}, number={3}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Ferrari, S. and Perego, M. and Fanciulli, M.}, year={2002}, month=may, pages={616–621} }

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