DOI: 10.1116/1.1430249. Density changes upon crystallization of Ge2Sb2.04Te4.74 films

Density changes upon crystallization of Ge2Sb2.04Te4.74 films

10.1116/1.1430249

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

The density of sputtered Ge2Sb2.04Te4.74 thin films upon annealing has been precisely determined by x-ray reflection and compared to the values determined from x-ray diffraction (XRD) data. The film density increases in two steps around 130 and 280 °C upon annealing up to 400 °C. These increases are consequences of phase transitions from amorphous to NaCl type and from NaCl type to hexagonal structure, respectively, as revealed by XRD. Average density values of 5.87±0.02, 6.27±0.02, and 6.39±0.02 g/cm3 were measured for the amorphous, NaCl-type, and hexagonal phases, respectively. This corresponds to density changes upon crystallization of 6.8±0.2% and 8.8±0.2% for NaCl-type and hexagonal phases, respectively. The accompanying film thickness reductions were determined to be 6.5±0.2% and 8.2±0.2%, which compares very well with the density changes. The corresponding XRD values are determined to be 6.43–6.48 and 6.48 g/cm3 for NaCl-type and the hexagonal phases, respectively. This shows that nearly void-free films are formed.

Bibliography

Njoroge, W. K., WÃ¶ltgens, H.-W., & Wuttig, M. (2002). Density changes upon crystallization of Ge2Sb2.04Te4.74 films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 20(1), 230â233.

Authors 3

Walter K. Njoroge (first)
Han-Willem Wöltgens (additional)
Matthias Wuttig (additional)

References 9 Referenced 348

10.1143/JJAP.38.4775 / Jpn. J. Appl. Phys., Part 1 (1999)
10.1063/1.367346 / J. Appl. Phys. (1998)
10.1063/1.370803 / J. Appl. Phys. (1999)
10.1063/1.1314323 / J. Appl. Phys. (2000)
10.1016/S0040-6090(99)01090-1 / Thin Solid Films (2000)
10.1063/1.373041 / J. Appl. Phys. (2000)
{'key': '2023070702293942500_r7', 'first-page': '339', 'volume': '13', 'year': '1968', 'journal-title': 'Sol. Phys. Crystallogr.'} / Sol. Phys. Crystallogr. (1968)
{'key': '2023070702293942500_r8', 'first-page': '1', 'volume': '13', 'year': '1958', 'journal-title': 'Philips Res. Rep.'} / Philips Res. Rep. (1958)
10.1063/1.371606 / J. Appl. Phys. (1999)

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:12 a.m.)
Deposited	2 years, 1 month ago (July 6, 2023, 10:29 p.m.)
Indexed	4 days, 19 hours ago (Aug. 19, 2025, 6:53 a.m.)
Issued	23 years, 7 months ago (Jan. 1, 2002)
Published	23 years, 7 months ago (Jan. 1, 2002)
Published Print	23 years, 7 months ago (Jan. 1, 2002)

Funders 0

None

BibTeX

@article{Njoroge_2002, title={Density changes upon crystallization of Ge2Sb2.04Te4.74 films}, volume={20}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.1430249}, DOI={10.1116/1.1430249}, number={1}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Njoroge, Walter K. and Wöltgens, Han-Willem and Wuttig, Matthias}, year={2002}, month=jan, pages={230–233} }

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