DOI: 10.1116/1.1387464. Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy

Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy

10.1116/1.1387464

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (20)

Abstract

The silicon–cerium oxide interface is studied using x-ray photoelectron spectroscopy. The oxidation and reduction of species at the interface are examined as a function of annealing temperature both in vacuum and oxygen ambient, in order to determine their relative stabilities. By depositing a very thin CeO2 film (∼30 Å), the cerium and silicon core level peaks can be monitored simultaneously. The presence of characteristic chemical shifts of the Si 2p peak gives information about any SiOx layer that may form at the interface. The oxidation state of the cerium can be probed from three different areas of the spectrum. From this information we can infer the oxidation state of both the silicon and the cerium. For the first time a complete picture of the interface is obtained. The implications of these findings on the utility of CeO2 in device applications are discussed.

Bibliography

Preisler, E. J., Marsh, O. J., Beach, R. A., & McGill, T. C. (2001). Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 19(4), 1611â1618.

Authors 4

E. J. Preisler (first)
O. J. Marsh (additional)
R. A. Beach (additional)
T. C. McGill (additional)

References 34 Referenced 124

10.1116/1.590257 / J. Vac. Sci. Technol. B (1998)
10.1116/1.585285 / J. Vac. Sci. Technol. B (1991)
10.1063/1.126199 / Appl. Phys. Lett. (2000)
10.1063/1.103202 / Appl. Phys. Lett. (1990)
10.1063/1.113011 / Appl. Phys. Lett. (1994)
{'key': '2023071607242546900_r6'}
10.1557/PROC-341-73 / Mater. Res. Soc. Symp. Proc. (1994)
10.1016/S0039-6028(00)00650-6 / Surf. Sci. (2000)
10.1116/1.577638 / J. Vac. Sci. Technol. A (1991)
10.1016/S0039-6028(98)00852-8 / Surf. Sci. (1999)
10.1016/S0039-6028(00)00373-3 / Surf. Sci. (2000)
10.1016/S0039-6028(87)81156-1 / Surf. Sci. (1987)
10.1002/sia.740111107 / Surf. Interface Anal. (1988)
10.1103/PhysRevB.34.5377 / Phys. Rev. B (1986)
10.1016/S0042-207X(97)00150-4 / Vacuum (1998)
10.1116/1.580373 / J. Vac. Sci. Technol. A (1996)
{'key': '2023071607242546900_r17', 'first-page': '222', 'volume': '70-1', 'year': '1993', 'journal-title': 'Appl. Surf. Sci.'} / Appl. Surf. Sci. (1993)
10.1103/PhysRevB.28.4489 / Phys. Rev. B (1983)
10.1103/PhysRevB.28.2281 / Phys. Rev. B (1983)
10.1103/PhysRevB.27.3992 / Phys. Rev. B (1983)
{'key': '2023071607242546900_r21', 'first-page': '686', 'volume': '1976', 'year': '1976', 'journal-title': 'J. Chem. Soc. Dalton Trans.'} / J. Chem. Soc. Dalton Trans. (1976)
10.1016/S0039-6028(98)00257-X / Surf. Sci. (1998)
10.1002/sia.740200604 / Surf. Interface Anal. (1993)
10.1016/S0169-4332(99)00577-2 / Appl. Surf. Sci. (2000)
10.1116/1.580475 / J. Vac. Sci. Technol. A (1997)
10.1103/PhysRevLett.53.202 / Phys. Rev. Lett. (1984)
{'key': '2023071607242546900_r27', 'first-page': '168', 'volume': '47–8', 'year': '1985', 'journal-title': 'J. Magn. Magn. Mater.'} / J. Magn. Magn. Mater. (1985)
10.1143/JPSJ.56.2201 / J. Phys. Soc. Jpn. (1987)
10.1016/0039-6028(94)90027-2 / Surf. Sci. (1994)
10.1149/1.2113648 / J. Electrochem. Soc. (1985)
10.1016/S0169-4332(99)00218-4 / Appl. Surf. Sci. (1999)
10.1143/JJAP.36.L133 / Jpn. J. Appl. Phys., Part 2 (1997)
{'key': '2023071607242546900_r33'}
10.1103/PhysRevLett.85.3440 / Phys. Rev. Lett. (2000)

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:12 a.m.)
Deposited	1 year, 7 months ago (Jan. 5, 2024, 4:30 p.m.)
Indexed	1 month ago (July 24, 2025, 7:36 a.m.)
Issued	24 years, 1 month ago (July 1, 2001)
Published	24 years, 1 month ago (July 1, 2001)
Published Print	24 years, 1 month ago (July 1, 2001)

Funders 0

None

BibTeX

@article{Preisler_2001, title={Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy}, volume={19}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.1387464}, DOI={10.1116/1.1387464}, number={4}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Preisler, E. J. and Marsh, O. J. and Beach, R. A. and McGill, T. C.}, year={2001}, month=jul, pages={1611–1618} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        24
      ]
    ],
    "date-time": "2025-07-24T11:36:25Z",
    "timestamp": 1753356985188
  },
  "reference-count": 34,
  "publisher": "American Vacuum Society",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The silicon\u2013cerium oxide interface is studied using x-ray photoelectron spectroscopy. The oxidation and reduction of species at the interface are examined as a function of annealing temperature both in vacuum and oxygen ambient, in order to determine their relative stabilities. By depositing a very thin CeO2 film (\u223c30 \u00c5), the cerium and silicon core level peaks can be monitored simultaneously. The presence of characteristic chemical shifts of the Si\u200a2p peak gives information about any SiOx layer that may form at the interface. The oxidation state of the cerium can be probed from three different areas of the spectrum. From this information we can infer the oxidation state of both the silicon and the cerium. For the first time a complete picture of the interface is obtained. The implications of these findings on the utility of CeO2 in device applications are discussed.</jats:p>",
  "DOI": "10.1116/1.1387464",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        27
      ]
    ],
    "date-time": "2002-07-27T09:12:43Z",
    "timestamp": 1027761163000
  },
  "page": "1611-1618",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 124,
  "title": "Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy",
  "prefix": "10.1116",
  "volume": "19",
  "author": [
    {
      "given": "E. J.",
      "family": "Preisler",
      "sequence": "first",
      "affiliation": [
        {
          "name": "T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California\u200991125"
        }
      ]
    },
    {
      "given": "O. J.",
      "family": "Marsh",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California\u200991125"
        }
      ]
    },
    {
      "given": "R. A.",
      "family": "Beach",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California\u200991125"
        }
      ]
    },
    {
      "given": "T. C.",
      "family": "McGill",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California\u200991125"
        }
      ]
    }
  ],
  "member": "20",
  "reference": [
    {
      "key": "2023071607242546900_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2686",
      "DOI": "10.1116/1.590257",
      "volume": "16",
      "year": "1998",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023071607242546900_r2",
      "doi-asserted-by": "crossref",
      "first-page": "181",
      "DOI": "10.1116/1.585285",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023071607242546900_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1881",
      "DOI": "10.1063/1.126199",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071607242546900_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1332",
      "DOI": "10.1063/1.103202",
      "volume": "56",
      "year": "1990",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071607242546900_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1030",
      "DOI": "10.1063/1.113011",
      "volume": "65",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023071607242546900_r6"
    },
    {
      "key": "2023071607242546900_r7",
      "doi-asserted-by": "crossref",
      "first-page": "73",
      "DOI": "10.1557/PROC-341-73",
      "volume": "341",
      "year": "1994",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2023071607242546900_r8",
      "doi-asserted-by": "crossref",
      "first-page": "117",
      "DOI": "10.1016/S0039-6028(00)00650-6",
      "volume": "464",
      "year": "2000",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023071607242546900_r9",
      "doi-asserted-by": "crossref",
      "first-page": "1416",
      "DOI": "10.1116/1.577638",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2023071607242546900_r10",
      "doi-asserted-by": "crossref",
      "first-page": "285",
      "DOI": "10.1016/S0039-6028(98)00852-8",
      "volume": "420",
      "year": "1999",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023071607242546900_r11",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1016/S0039-6028(00)00373-3",
      "volume": "461",
      "year": "2000",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023071607242546900_r12",
      "doi-asserted-by": "crossref",
      "first-page": "L849",
      "DOI": "10.1016/S0039-6028(87)81156-1",
      "volume": "192",
      "year": "1987",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023071607242546900_r13",
      "doi-asserted-by": "crossref",
      "first-page": "577",
      "DOI": "10.1002/sia.740111107",
      "volume": "11",
      "year": "1988",
      "journal-title": "Surf. Interface Anal."
    },
    {
      "key": "2023071607242546900_r14",
      "doi-asserted-by": "crossref",
      "first-page": "5377",
      "DOI": "10.1103/PhysRevB.34.5377",
      "volume": "34",
      "year": "1986",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023071607242546900_r15",
      "doi-asserted-by": "crossref",
      "first-page": "133",
      "DOI": "10.1016/S0042-207X(97)00150-4",
      "volume": "49",
      "year": "1998",
      "journal-title": "Vacuum"
    },
    {
      "key": "2023071607242546900_r16",
      "doi-asserted-by": "crossref",
      "first-page": "693",
      "DOI": "10.1116/1.580373",
      "volume": "14",
      "year": "1996",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2023071607242546900_r17",
      "first-page": "222",
      "volume": "70-1",
      "year": "1993",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023071607242546900_r18",
      "doi-asserted-by": "crossref",
      "first-page": "4489",
      "DOI": "10.1103/PhysRevB.28.4489",
      "volume": "28",
      "year": "1983",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023071607242546900_r19",
      "doi-asserted-by": "crossref",
      "first-page": "2281",
      "DOI": "10.1103/PhysRevB.28.2281",
      "volume": "28",
      "year": "1983",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023071607242546900_r20",
      "doi-asserted-by": "crossref",
      "first-page": "3992",
      "DOI": "10.1103/PhysRevB.27.3992",
      "volume": "27",
      "year": "1983",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023071607242546900_r21",
      "first-page": "686",
      "volume": "1976",
      "year": "1976",
      "journal-title": "J. Chem. Soc. Dalton Trans."
    },
    {
      "key": "2023071607242546900_r22",
      "doi-asserted-by": "crossref",
      "first-page": "307",
      "DOI": "10.1016/S0039-6028(98)00257-X",
      "volume": "409",
      "year": "1998",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023071607242546900_r23",
      "doi-asserted-by": "crossref",
      "first-page": "508",
      "DOI": "10.1002/sia.740200604",
      "volume": "20",
      "year": "1993",
      "journal-title": "Surf. Interface Anal."
    },
    {
      "key": "2023071607242546900_r24",
      "doi-asserted-by": "crossref",
      "first-page": "301",
      "DOI": "10.1016/S0169-4332(99)00577-2",
      "volume": "161",
      "year": "2000",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023071607242546900_r25",
      "doi-asserted-by": "crossref",
      "first-page": "52",
      "DOI": "10.1116/1.580475",
      "volume": "15",
      "year": "1997",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2023071607242546900_r26",
      "doi-asserted-by": "crossref",
      "first-page": "202",
      "DOI": "10.1103/PhysRevLett.53.202",
      "volume": "53",
      "year": "1984",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023071607242546900_r27",
      "first-page": "168",
      "volume": "47\u20138",
      "year": "1985",
      "journal-title": "J. Magn. Magn. Mater."
    },
    {
      "key": "2023071607242546900_r28",
      "doi-asserted-by": "crossref",
      "first-page": "2201",
      "DOI": "10.1143/JPSJ.56.2201",
      "volume": "56",
      "year": "1987",
      "journal-title": "J. Phys. Soc. Jpn."
    },
    {
      "key": "2023071607242546900_r29",
      "doi-asserted-by": "crossref",
      "first-page": "71",
      "DOI": "10.1016/0039-6028(94)90027-2",
      "volume": "321",
      "year": "1994",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023071607242546900_r30",
      "doi-asserted-by": "crossref",
      "first-page": "2685",
      "DOI": "10.1149/1.2113648",
      "volume": "132",
      "year": "1985",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023071607242546900_r31",
      "doi-asserted-by": "crossref",
      "first-page": "164",
      "DOI": "10.1016/S0169-4332(99)00218-4",
      "volume": "148",
      "year": "1999",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023071607242546900_r32",
      "doi-asserted-by": "crossref",
      "first-page": "L133",
      "DOI": "10.1143/JJAP.36.L133",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2023071607242546900_r33"
    },
    {
      "key": "2023071607242546900_r34",
      "doi-asserted-by": "crossref",
      "first-page": "3440",
      "DOI": "10.1103/PhysRevLett.85.3440",
      "volume": "85",
      "year": "2000",
      "journal-title": "Phys. Rev. Lett."
    }
  ],
  "container-title": "Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/19/4/1611/11270034/1611_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/19/4/1611/11270034/1611_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        1,
        5
      ]
    ],
    "date-time": "2024-01-05T21:30:19Z",
    "timestamp": 1704490219000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jvb/article/19/4/1611/591300/Stability-of-cerium-oxide-on-silicon-studied-by-x"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        7,
        1
      ]
    ]
  },
  "references-count": 34,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2001,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.1387464",
  "relation": {},
  "ISSN": [
    "1071-1023",
    "1520-8567"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2001,
        7
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2001,
        7,
        1
      ]
    ]
  }
}