DOI: 10.1116/1.1382878. Growth of NiO films on various GaAs faces via electron bombardment evaporation

Growth of NiO films on various GaAs faces via electron bombardment evaporation

10.1116/1.1382878

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

Growth of NiO films was examined on various crystal faces of GaAs by using a single electron bombardment source. Use of alkali halide buffer layers achieved good quality of epitaxial growth on GaAs (001). Electron spectroscopies (Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, electron energy loss spectroscopy) revealed that the grown NiO film has almost the same electronic structure as bulk NiO. This method helps integration of 3d transition-metal oxides on technologically important materials such as GaAs or Si.

Bibliography

Nishita, K., Koma, A., & Saiki, K. (2001). Growth of NiO films on various GaAs faces via electron bombardment evaporation. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(5), 2282â2286.

Authors 3

K. Nishita (first)
A. Koma (additional)
K. Saiki (additional)

References 29 Referenced 12

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Dates

Type	When
Created	23 years ago (July 27, 2002, 5:12 a.m.)
Deposited	1 year, 7 months ago (Jan. 5, 2024, 4:30 p.m.)
Indexed	1 year, 7 months ago (Jan. 5, 2024, 7:03 p.m.)
Issued	23 years, 11 months ago (Sept. 1, 2001)
Published	23 years, 11 months ago (Sept. 1, 2001)
Published Print	23 years, 11 months ago (Sept. 1, 2001)

Funders 0

None

BibTeX

@article{Nishita_2001, title={Growth of NiO films on various GaAs faces via electron bombardment evaporation}, volume={19}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.1382878}, DOI={10.1116/1.1382878}, number={5}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Nishita, K. and Koma, A. and Saiki, K.}, year={2001}, month=sep, pages={2282–2286} }

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