DOI: 10.1116/1.1368670. Ion channeling effects on the focused ion beam milling of Cu

Ion channeling effects on the focused ion beam milling of Cu

10.1116/1.1368670

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (20)

Abstract

The use of focused ion beam (FIB) instruments for device modification and specimen preparation has become a mainstay in the microelectronics industry and in thin film characterization. The role of the FIB as a tool to rapidly prepare high quality transmission electron microscopy specimens is particularly significant. Special attention has been given to FIB milling of Cu and Si in the microelectronics arena. Although FIB applications involving Si have been extremely successful, it has been noted that Cu tends to present significant challenges to FIB milling because of effects such as the development of milling induced topographical features. We show evidence that links the occurrence of milling induced topography to the severity of redeposition. Specifically, Cu, which sputters ∼2.5 times faster than Si, exhibits an increased susceptibility to redeposition related artifacts. In addition, the effects and the mechanism of Ga+ channeling in Cu is used to illustrate that Ga+ channeling reduces the sputtering yield, improves the quality of FIB mill cuts, and improves the surface characteristics of FIB milled Cu. Finally, a technique for improving FIB milling across grain boundaries or interfaces using ion channeling contrast is suggested.

Bibliography

Kempshall, B. W., Schwarz, S. M., Prenitzer, B. I., Giannuzzi, L. A., Irwin, R. B., & Stevie, F. A. (2001). Ion channeling effects on the focused ion beam milling of Cu. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 19(3), 749â754.

Authors 6

B. W. Kempshall (first)
S. M. Schwarz (additional)
B. I. Prenitzer (additional)
L. A. Giannuzzi (additional)
R. B. Irwin (additional)
F. A. Stevie (additional)

References 11 Referenced 87

{'key': '2023071000292940600_r1'}
{'key': '2023071000292940600_r2'}
10.1007/BF01729909 / J. Mater. Sci. Lett. (1988)
{'key': '2023071000292940600_r4', 'first-page': '593', 'volume': '279', 'year': '1993', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1993)
{'key': '2023071000292940600_r5', 'first-page': '126', 'volume': '12', 'year': '1964', 'journal-title': 'Phys. Lett.'} / Phys. Lett. (1964)
10.1063/1.1754548 / Appl. Phys. Lett. (1966)
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10.1016/0168-583X(90)90536-4 / Nucl. Instrum. Methods Phys. Res. B (1990)
10.1002/sia.740200802 / Surf. Interface Anal. (1993)
{'key': '2023071000292940600_r10'}
10.1016/S0968-4328(99)00005-0 / Micron (1999)

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:18 a.m.)
Deposited	2 years, 1 month ago (July 9, 2023, 8:29 p.m.)
Indexed	2 minutes ago (Aug. 24, 2025, 5:50 p.m.)
Issued	24 years, 3 months ago (May 1, 2001)
Published	24 years, 3 months ago (May 1, 2001)
Published Print	24 years, 3 months ago (May 1, 2001)

Funders 0

None

BibTeX

@article{Kempshall_2001, title={Ion channeling effects on the focused ion beam milling of Cu}, volume={19}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.1368670}, DOI={10.1116/1.1368670}, number={3}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Kempshall, B. W. and Schwarz, S. M. and Prenitzer, B. I. and Giannuzzi, L. A. and Irwin, R. B. and Stevie, F. A.}, year={2001}, month=may, pages={749–754} }

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