DOI: 10.1116/1.1318711. Chemical bonding at metal-semiconductor interfaces

Chemical bonding at metal-semiconductor interfaces

10.1116/1.1318711

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

Trends in the I–V characteristics of metal-semiconductor interfaces can be analyzed in terms of the atomic configurations at interfaces as well as the redistribution of electronic charge which occurs because of chemical bonding at the interface. The atomic configurations, in turn, depend on the thermal history of the interface, which can be discussed from several points of view. The chemical bonding picture can be contrasted with the more traditional approach based on surface states, such as those associated with dangling bonds on free semiconductor surfaces.

Bibliography

Phillips, J. C. (1974). Chemical bonding at metal-semiconductor interfaces. Journal of Vacuum Science and Technology, 11(6), 947â950.

Authors 1

J. C. Phillips (first)

References 0 Referenced 75

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:30 a.m.)
Deposited	2 years, 2 months ago (June 29, 2023, 12:20 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 5:05 a.m.)
Issued	50 years, 10 months ago (Nov. 1, 1974)
Published	50 years, 10 months ago (Nov. 1, 1974)
Published Print	50 years, 10 months ago (Nov. 1, 1974)

Funders 0

None

BibTeX

@article{Phillips_1974, title={Chemical bonding at metal-semiconductor interfaces}, volume={11}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.1318711}, DOI={10.1116/1.1318711}, number={6}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Phillips, J. C.}, year={1974}, month=nov, pages={947–950} }

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