Abstract
A review of some dominant mechanisms in ion plating is made. Factors influencing throwing power and film quality are discussed and the damaging effects of a high ambient gas background are considered with a view toward minimizing the harmful effects of contaminant gas background. The physical mechanisms involved in an ion beam deposition process [S. Aisenberg and R. Chabot, J. Appl. Phys. 42, 2953 (1972)] are examined. The effects of chamber pressure, electrical bias arrangements, and the introduction of a coevaporant source are discussed with regard to deposition rate, ultimate film quality, and throwing power of the system.
Dates
Type | When |
---|---|
Created | 23 years ago (July 27, 2002, 5:29 a.m.) |
Deposited | 2 years, 1 month ago (June 23, 2023, 9:17 p.m.) |
Indexed | 1 month, 4 weeks ago (June 25, 2025, 8:34 p.m.) |
Issued | 52 years, 7 months ago (Jan. 1, 1973) |
Published | 52 years, 7 months ago (Jan. 1, 1973) |
Published Print | 52 years, 7 months ago (Jan. 1, 1973) |
@article{Aisenberg_1973, title={Physics of Ion Plating and Ion Beam Deposition}, volume={10}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.1317915}, DOI={10.1116/1.1317915}, number={1}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Aisenberg, S. and Chabot, R. W.}, year={1973}, month=jan, pages={104–107} }