DOI: 10.1116/1.1317072. Electrical Properties of rf Sputtered Bismuth Telluride Thin Films

Electrical Properties of rf Sputtered Bismuth Telluride Thin Films

10.1116/1.1317072

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

The resistivity, Hall coefficient, and composition of thin films prepared by rf sputtering from a sintered cathode of stoichiometric Bi2Te3 were measured. Sputtering parameters were varied and affected both composition and resistivity. The polycrystalline films exhibited a strong (101̄5) fiber texture. Resistivity varied from 0.60 mΩ cm to 9.0 mΩ cm over a composition range from 25 wt % Te to 49 wt % Te with the maximum resistivity near Bi2Te3. High carrier concentration and low ionization energies indicate metallic characteristics.

Bibliography

McCulley, M. J., Neudeck, G. W., & Liedl, G. L. (1973). Electrical Properties of rf Sputtered Bismuth Telluride Thin Films. Journal of Vacuum Science and Technology, 10(2), 391â392.

Authors 3

M. J. McCulley (first)
G. W. Neudeck (additional)
G. L. Liedl (additional)

References 0 Referenced 14

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:29 a.m.)
Deposited	2 years, 2 months ago (June 28, 2023, 6:07 p.m.)
Indexed	3 weeks, 2 days ago (Aug. 12, 2025, 5:51 p.m.)
Issued	52 years, 6 months ago (March 1, 1973)
Published	52 years, 6 months ago (March 1, 1973)
Published Print	52 years, 6 months ago (March 1, 1973)

Funders 0

None

BibTeX

@article{McCulley_1973, title={Electrical Properties of rf Sputtered Bismuth Telluride Thin Films}, volume={10}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.1317072}, DOI={10.1116/1.1317072}, number={2}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={McCulley, M. J. and Neudeck, G. W. and Liedl, G. L.}, year={1973}, month=mar, pages={391–392} }

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