Abstract
Pt, and Pt oxide thin films were prepared by reactive sputtering of Pt in Ar and O2 gas mixtures, and the influence of O2 flow ratio on their formation process was studied. O2 gettering by Pt atoms was confirmed from plasma emission spectra and pressure change in a sputtering chamber before and after striking the discharge. At O2 flow ratios below 20%, almost all of the introduced O2 molecules were gettered and Pt films were deposited. At O2 flow ratios above 20%, the number of supplied O2 molecules overcame the gettering effect and the O2 partial pressure began to increase, and Pt oxide films were deposited. The deposition rate of Pt oxide films decreased at O2 flow ratios above 30%, because the target surface state changed from a metallic target mode to an oxide target mode.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 27, 2002, 5:07 a.m.) |
Deposited | 2 years, 1 month ago (July 23, 2023, 8:03 p.m.) |
Indexed | 2 months, 3 weeks ago (June 2, 2025, 3:05 p.m.) |
Issued | 24 years, 11 months ago (Sept. 1, 2000) |
Published | 24 years, 11 months ago (Sept. 1, 2000) |
Published Print | 24 years, 11 months ago (Sept. 1, 2000) |
@article{Abe_2000, title={Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films}, volume={18}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.1288192}, DOI={10.1116/1.1288192}, number={5}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Abe, Y. and Kawamura, M. and Sasaki, K.}, year={2000}, month=sep, pages={2608–2612} }