DOI: 10.1115/1.2709656. Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method

Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method

10.1115/1.2709656

Crossref journal-article

ASME International

Journal of Heat Transfer (33)

Abstract

An atomistic Green’s function method is developed to simulate phonon transport across a strained germanium (or silicon) thin film between two semi-infinite silicon (or germanium) contacts. A plane-wave formulation is employed to handle the translational symmetry in directions parallel to the interfaces. The phonon transmission function and thermal conductance across the thin film are evaluated for various atomic configurations. The contributions from lattice straining and material heterogeneity are evaluated separately, and their relative magnitudes are characterized. The dependence of thermal conductance on film thickness is also calculated, verifying that the thermal conductance reaches an asymptotic value for very thick films. The thermal boundary resistance of a single Si∕Ge interface is computed and agrees well with analytical model predictions. Multiple-interface effects on thermal resistance are investigated, and the results indicate that the first few interfaces have the most significant effect on the overall thermal resistance.

Bibliography

Zhang, W., Fisher, T. S., & Mingo, N. (2006). Simulation of Interfacial Phonon Transport in SiâGe Heterostructures Using an Atomistic Greenâs Function Method. Journal of Heat Transfer, 129(4), 483â491.

Authors 3

W. Zhang (first)
T. S. Fisher (additional)
N. Mingo (additional)

References 42 Referenced 190

10.1179/095066003225010182 / Int. Mater. Rev. / Recent Developments in Thermoelectric Materials by Chen
10.1006/spmi.2000.0920 / Superlattices Microstruct. / Nanoscale Device Modeling: The Green’s Function Method by Datta
10.1063/1.123994 / Appl. Phys. Lett. / Phonon Scattering in Silicon Films With Thickness of Order 100nm by Ju
10.1139/p59-037 / Can. J. Phys. / The Transport of Heat Between Dissimilar Solids at Low Temperature by Little
10.1103/RevModPhys.61.605 / Rev. Mod. Phys. / Thermal Boundary Resistance by Swartz
10.1115/1.1857944 / ASME J. Heat Transfer / Measurement of Thermal Boundary Conductance of a Series of Metal-Dielectric Interfaces by the Transient Thermoreflectance Technique by Stevens
10.1115/1.1338138 / ASME J. Heat Transfer / A Scattering-Mediated Acoustic Mismatch Model for the Prediction of Thermal Boundary Resistance by Prasher
10.1115/1.1833367 / ASME J. Heat Transfer / Submicron Heat Transport model in Silicon Accounting for Phonon Dispersion and Polarization by Narumanchi
10.1115/1.1377018 / ASME J. Heat Transfer / Monte Carlo Study of Phonon Transport in Solid Thin Films including Dispersion and Polarization by Mazumdar
10.1109/ITHERM.2004.1318314 / Proceedings of the 9th Intersociety Conference on Thermal and Thermomechanical Phenomena In Electronic Systems / Ballistic Phonon Transport in Strained Si∕SiGe Nanostructures With an Application to Strained-silicon Transistors by Yazdani
10.1063/1.1555256 / J. Appl. Phys. / Strain and Size Effects on Heat Transport in Nanostructure by Picu
10.1115/1.1495516 / ASME J. Heat Transfer / Interface and Strain Effects on the Thermal Conductivity of Heterostructures: A Molecular Dynamics Study by Abramson
10.1063/1.1465106 / Appl. Phys. Lett. / Phonon Wave-Packet Dynamics at Semiconductor Interfaces by Molecular-Dynamics Simulation by Schelling
10.1103/PhysRevB.40.3685 / Phys. Rev. B / Lattice-dynamical Calculation of the Kapitza Resistance Between FCC Lattices by Young
10.1103/PhysRevB.48.2515 / Phys. Rev. B / Phonon-transmission Rate, Fluctuations, and Localization in Random Semiconductor Superlattices: Green’s-Function Approach by Nishiguchi
10.1063/1.1524305 / J. Appl. Phys. / Nanoscale Thermal Transport by Cahill
10.1103/PhysRevB.42.7386 / Phys. Rev. B / Theory of the Thermal Boundary Resistance Between Dissimilar Lattices by Pettersson
10.1103/PhysRevB.48.17938 / Phys. Rev. B / Effect of Strain on Phonons in Si, Ge, and Si∕Ge Heterostructures by Sui
10.1103/PhysRevB.74.125402 / Phys. Rev. B / Anharmonic Phonon Flow Through Molecular Sized Junctions by Mingo
10.1109/TED.2004.836648 / IEEE Trans. Electron Devices / A 90‐nm Logic Technology Featuring Strained-Silicon by Thompson
10.1063/1.1870106 / Appl. Phys. Lett. / Monte Carlo Simulation of Joule Heating in Bulk and Strained Silicon by Pop
10.1103/PhysRevB.68.245406 / Phys. Rev. B / Phonon Transport in Nanowires Coated With an Amorphous Material: An Atomistic Green’s Function Approach by Mingo
10.1103/PhysRevB.70.249901 / Phys. Rev. B / Erratum: Phonon Transport in Nanowires Coated With an Amorphous Material: An Atomistic Green’s Function Approach [Phys. Rev. B 68, 245406 (2003)] by Mingo
10.1103/PhysRevB.62.8397 / Phys. Rev. B / Morphology Evolution During the Growth of Strained-Layer Superlattices by Shilkrot
{'key': '2019100515452923300_c25', 'first-page': '417', 'volume-title': 'Materials Science of Thin Films', 'author': 'Ohring'} / Materials Science of Thin Films by Ohring
10.1063/1.1713863 / J. Appl. Phys. / Young’s Modulus, Shear Modulus, and Poisson’s Ratio in Silicon and Germanium by Wortman
{'key': '2019100515452923300_c27', 'first-page': '181', 'volume-title': 'Electronic Structure and the Properties of Solids', 'author': 'Harrison'} / Electronic Structure and the Properties of Solids by Harrison
10.1103/PhysRevB.68.113308 / Phys. Rev. B / Calculation of Si Nanowire Thermal Conductivity Using Complete Phonon Dispersion Relations by Mingo
10.1103/PhysRev.145.637 / Phys. Rev. / Effect of Invariance Requirements on the Elastic Strain Energy of Crystals With Application to the Diamond Structure by Keating
{'key': '2019100515452923300_c30', 'first-page': '42', 'volume-title': 'Atomic and Electronic Structure of Surfaces', 'author': 'Lannoo'} / Atomic and Electronic Structure of Surfaces by Lannoo
10.1103/PhysRevB.28.4397 / Phys. Rev. B / Effective Two-Dimensional Hamiltonian at Surfaces by Guinea
10.1115/IMECE2005-80053 / Proceedings of the ASME International Mechanical Engineering Congress and Exposition 2005 / Simulation of Phonon Interfacial Transport in Strained Silicon-Germanium Heterostructures by Zhang
{'key': '2019100515452923300_c33', 'first-page': '223', 'volume-title': 'Quantum Transport: Atom to Transistor', 'author': 'Datta', 'edition': '1st ed.'} / Quantum Transport: Atom to Transistor by Datta
10.1063/1.1503165 / J. Appl. Phys. / Simulating Quantum Transport in Nanoscale Transistors: Real Versus Mode-Space Approaches by Venugopal
{'key': '2019100515452923300_c35', 'first-page': '108', 'volume-title': 'Introduction to Solid State Physics', 'author': 'Kittel', 'edition': '8th ed.'} / Introduction to Solid State Physics by Kittel
10.1006/spmi.2000.0900 / Superlattices Microstruct. / Thermal Conductivity of Symmetrically Strained Si∕Ge Superlattices by Tascius
10.1063/1.1628819 / Appl. Phys. Lett. / Thermal Conductivity in Strain Symmetrized Si∕Ge Superlattices on Si(111) by Chakraborty
10.1063/1.118755 / Appl. Phys. Lett. / Thermal Conductivity of Si-Ge Superlattices by Lee
10.1103/PhysRevB.48.16373 / Phys. Rev. B / Kapitza Conductance and Heat Flow Between Solids at Temperature From 50to300K by Stoner
10.1103/PhysRevB.67.054302 / Phys. Rev. B / Thermal Conductance of Epitaxial Interfaces by Costescu
10.1139/p76-207 / Can. J. Phys. / Analysis of Heat Transfer Between Solids at Low Temperatures by Cheeke
10.1103/PhysRev.132.2461 / Phys. Rev. / Analysis of Lattice Thermal Conductivity by Holland

Dates

Type	When
Created	18 years, 4 months ago (April 24, 2007, 8:31 a.m.)
Deposited	5 years, 11 months ago (Oct. 5, 2019, 11:45 a.m.)
Indexed	2 weeks ago (Aug. 23, 2025, 9:47 p.m.)
Issued	19 years, 3 months ago (May 30, 2006)
Published	19 years, 3 months ago (May 30, 2006)
Published Online	19 years, 3 months ago (May 30, 2006)
Published Print	18 years, 5 months ago (April 1, 2007)

Funders 0

None

BibTeX

@article{Zhang_2006, title={Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method}, volume={129}, ISSN={1528-8943}, url={http://dx.doi.org/10.1115/1.2709656}, DOI={10.1115/1.2709656}, number={4}, journal={Journal of Heat Transfer}, publisher={ASME International}, author={Zhang, W. and Fisher, T. S. and Mingo, N.}, year={2006}, month=may, pages={483–491} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        24
      ]
    ],
    "date-time": "2025-08-24T01:47:55Z",
    "timestamp": 1756000075666
  },
  "reference-count": 42,
  "publisher": "ASME International",
  "issue": "4",
  "content-domain": {
    "domain": [
      "asmedigitalcollection.asme.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        4,
        1
      ]
    ]
  },
  "abstract": "<jats:p>An atomistic Green\u2019s function method is developed to simulate phonon transport across a strained germanium (or silicon) thin film between two semi-infinite silicon (or germanium) contacts. A plane-wave formulation is employed to handle the translational symmetry in directions parallel to the interfaces. The phonon transmission function and thermal conductance across the thin film are evaluated for various atomic configurations. The contributions from lattice straining and material heterogeneity are evaluated separately, and their relative magnitudes are characterized. The dependence of thermal conductance on film thickness is also calculated, verifying that the thermal conductance reaches an asymptotic value for very thick films. The thermal boundary resistance of a single Si\u2215Ge interface is computed and agrees well with analytical model predictions. Multiple-interface effects on thermal resistance are investigated, and the results indicate that the first few interfaces have the most significant effect on the overall thermal resistance.</jats:p>",
  "DOI": "10.1115/1.2709656",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        4,
        24
      ]
    ],
    "date-time": "2007-04-24T12:31:01Z",
    "timestamp": 1177417861000
  },
  "page": "483-491",
  "update-policy": "http://dx.doi.org/10.1115/crossmarkpolicy-asme",
  "source": "Crossref",
  "is-referenced-by-count": 190,
  "title": "Simulation of Interfacial Phonon Transport in Si\u2013Ge Heterostructures Using an Atomistic Green\u2019s Function Method",
  "prefix": "10.1115",
  "volume": "129",
  "author": [
    {
      "given": "W.",
      "family": "Zhang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "School of Mechanical Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907"
        }
      ]
    },
    {
      "given": "T. S.",
      "family": "Fisher",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "School of Mechanical Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907"
        }
      ]
    },
    {
      "given": "N.",
      "family": "Mingo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NASA-Ames Center for Nanotechnology, 229-1, Moffett Field, CA 94035"
        }
      ]
    }
  ],
  "member": "33",
  "published-online": {
    "date-parts": [
      [
        2006,
        5,
        30
      ]
    ]
  },
  "reference": [
    {
      "issue": "1",
      "key": "2019100515452923300_c1",
      "doi-asserted-by": "publisher",
      "first-page": "45",
      "DOI": "10.1179/095066003225010182",
      "article-title": "Recent Developments in Thermoelectric Materials",
      "volume": "48",
      "author": "Chen",
      "journal-title": "Int. Mater. Rev.",
      "ISSN": "http://id.crossref.org/issn/0950-6608",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c2",
      "doi-asserted-by": "publisher",
      "first-page": "253",
      "DOI": "10.1006/spmi.2000.0920",
      "article-title": "Nanoscale Device Modeling: The Green\u2019s Function Method",
      "volume": "28",
      "author": "Datta",
      "journal-title": "Superlattices Microstruct.",
      "ISSN": "http://id.crossref.org/issn/0749-6036",
      "issn-type": "print"
    },
    {
      "issue": "20",
      "key": "2019100515452923300_c3",
      "doi-asserted-by": "publisher",
      "first-page": "3005",
      "DOI": "10.1063/1.123994",
      "article-title": "Phonon Scattering in Silicon Films With Thickness of Order 100nm",
      "volume": "74",
      "author": "Ju",
      "journal-title": "Appl. Phys. Lett.",
      "ISSN": "http://id.crossref.org/issn/0003-6951",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c4",
      "doi-asserted-by": "crossref",
      "first-page": "334",
      "DOI": "10.1139/p59-037",
      "article-title": "The Transport of Heat Between Dissimilar Solids at Low Temperature",
      "volume": "37",
      "author": "Little",
      "journal-title": "Can. J. Phys.",
      "ISSN": "http://id.crossref.org/issn/0008-4204",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c5",
      "doi-asserted-by": "publisher",
      "first-page": "605",
      "DOI": "10.1103/RevModPhys.61.605",
      "article-title": "Thermal Boundary Resistance",
      "volume": "61",
      "author": "Swartz",
      "journal-title": "Rev. Mod. Phys.",
      "ISSN": "http://id.crossref.org/issn/0034-6861",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c6",
      "doi-asserted-by": "publisher",
      "first-page": "315",
      "DOI": "10.1115/1.1857944",
      "article-title": "Measurement of Thermal Boundary Conductance of a Series of Metal-Dielectric Interfaces by the Transient Thermoreflectance Technique",
      "volume": "127",
      "author": "Stevens",
      "journal-title": "ASME J. Heat Transfer",
      "ISSN": "http://id.crossref.org/issn/0022-1481",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c7",
      "doi-asserted-by": "publisher",
      "first-page": "105",
      "DOI": "10.1115/1.1338138",
      "article-title": "A Scattering-Mediated Acoustic Mismatch Model for the Prediction of Thermal Boundary Resistance",
      "volume": "123",
      "author": "Prasher",
      "journal-title": "ASME J. Heat Transfer",
      "ISSN": "http://id.crossref.org/issn/0022-1481",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c8",
      "doi-asserted-by": "publisher",
      "first-page": "946",
      "DOI": "10.1115/1.1833367",
      "article-title": "Submicron Heat Transport model in Silicon Accounting for Phonon Dispersion and Polarization",
      "volume": "126",
      "author": "Narumanchi",
      "journal-title": "ASME J. Heat Transfer",
      "ISSN": "http://id.crossref.org/issn/0022-1481",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c9",
      "doi-asserted-by": "publisher",
      "first-page": "749",
      "DOI": "10.1115/1.1377018",
      "article-title": "Monte Carlo Study of Phonon Transport in Solid Thin Films including Dispersion and Polarization",
      "volume": "123",
      "author": "Mazumdar",
      "journal-title": "ASME J. Heat Transfer",
      "ISSN": "http://id.crossref.org/issn/0022-1481",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c10",
      "doi-asserted-by": "crossref",
      "DOI": "10.1109/ITHERM.2004.1318314",
      "article-title": "Ballistic Phonon Transport in Strained Si\u2215SiGe Nanostructures With an Application to Strained-silicon Transistors",
      "volume-title": "Proceedings of the 9th Intersociety Conference on Thermal and Thermomechanical Phenomena In Electronic Systems",
      "author": "Yazdani"
    },
    {
      "issue": "6",
      "key": "2019100515452923300_c11",
      "doi-asserted-by": "publisher",
      "first-page": "3535",
      "DOI": "10.1063/1.1555256",
      "article-title": "Strain and Size Effects on Heat Transport in Nanostructure",
      "volume": "93",
      "author": "Picu",
      "journal-title": "J. Appl. Phys.",
      "ISSN": "http://id.crossref.org/issn/0021-8979",
      "issn-type": "print"
    },
    {
      "issue": "5",
      "key": "2019100515452923300_c12",
      "doi-asserted-by": "publisher",
      "first-page": "963",
      "DOI": "10.1115/1.1495516",
      "article-title": "Interface and Strain Effects on the Thermal Conductivity of Heterostructures: A Molecular Dynamics Study",
      "volume": "124",
      "author": "Abramson",
      "journal-title": "ASME J. Heat Transfer",
      "ISSN": "http://id.crossref.org/issn/0022-1481",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c13",
      "doi-asserted-by": "publisher",
      "first-page": "2484",
      "DOI": "10.1063/1.1465106",
      "article-title": "Phonon Wave-Packet Dynamics at Semiconductor Interfaces by Molecular-Dynamics Simulation",
      "volume": "80",
      "author": "Schelling",
      "journal-title": "Appl. Phys. Lett.",
      "ISSN": "http://id.crossref.org/issn/0003-6951",
      "issn-type": "print"
    },
    {
      "issue": "6",
      "key": "2019100515452923300_c14",
      "doi-asserted-by": "publisher",
      "first-page": "3685",
      "DOI": "10.1103/PhysRevB.40.3685",
      "article-title": "Lattice-dynamical Calculation of the Kapitza Resistance Between FCC Lattices",
      "volume": "40",
      "author": "Young",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c15",
      "doi-asserted-by": "publisher",
      "first-page": "2515",
      "DOI": "10.1103/PhysRevB.48.2515",
      "article-title": "Phonon-transmission Rate, Fluctuations, and Localization in Random Semiconductor Superlattices: Green\u2019s-Function Approach",
      "volume": "48",
      "author": "Nishiguchi",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "issue": "2",
      "key": "2019100515452923300_c16",
      "doi-asserted-by": "publisher",
      "first-page": "793",
      "DOI": "10.1063/1.1524305",
      "article-title": "Nanoscale Thermal Transport",
      "volume": "93",
      "author": "Cahill",
      "journal-title": "J. Appl. Phys.",
      "ISSN": "http://id.crossref.org/issn/0021-8979",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c17",
      "doi-asserted-by": "publisher",
      "first-page": "7386",
      "DOI": "10.1103/PhysRevB.42.7386",
      "article-title": "Theory of the Thermal Boundary Resistance Between Dissimilar Lattices",
      "volume": "42",
      "author": "Pettersson",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c18",
      "doi-asserted-by": "publisher",
      "first-page": "17938",
      "DOI": "10.1103/PhysRevB.48.17938",
      "article-title": "Effect of Strain on Phonons in Si, Ge, and Si\u2215Ge Heterostructures",
      "volume": "48",
      "author": "Sui",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c19",
      "doi-asserted-by": "publisher",
      "first-page": "125402",
      "DOI": "10.1103/PhysRevB.74.125402",
      "article-title": "Anharmonic Phonon Flow Through Molecular Sized Junctions",
      "volume": "74",
      "author": "Mingo",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "issue": "11",
      "key": "2019100515452923300_c20",
      "doi-asserted-by": "publisher",
      "first-page": "1790",
      "DOI": "10.1109/TED.2004.836648",
      "article-title": "A 90\u2010nm Logic Technology Featuring Strained-Silicon",
      "volume": "51",
      "author": "Thompson",
      "journal-title": "IEEE Trans. Electron Devices",
      "ISSN": "http://id.crossref.org/issn/0018-9383",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c21",
      "doi-asserted-by": "publisher",
      "first-page": "082101",
      "DOI": "10.1063/1.1870106",
      "article-title": "Monte Carlo Simulation of Joule Heating in Bulk and Strained Silicon",
      "volume": "86",
      "author": "Pop",
      "journal-title": "Appl. Phys. Lett.",
      "ISSN": "http://id.crossref.org/issn/0003-6951",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c22",
      "doi-asserted-by": "publisher",
      "first-page": "245406",
      "DOI": "10.1103/PhysRevB.68.245406",
      "article-title": "Phonon Transport in Nanowires Coated With an Amorphous Material: An Atomistic Green\u2019s Function Approach",
      "volume": "68",
      "author": "Mingo",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c23",
      "doi-asserted-by": "publisher",
      "first-page": "249901",
      "DOI": "10.1103/PhysRevB.70.249901",
      "article-title": "Erratum: Phonon Transport in Nanowires Coated With an Amorphous Material: An Atomistic Green\u2019s Function Approach [Phys. Rev. B 68, 245406 (2003)]",
      "volume": "70",
      "author": "Mingo",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "issue": "12",
      "key": "2019100515452923300_c24",
      "doi-asserted-by": "publisher",
      "first-page": "8397",
      "DOI": "10.1103/PhysRevB.62.8397",
      "article-title": "Morphology Evolution During the Growth of Strained-Layer Superlattices",
      "volume": "62",
      "author": "Shilkrot",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c25",
      "first-page": "417",
      "volume-title": "Materials Science of Thin Films",
      "author": "Ohring"
    },
    {
      "key": "2019100515452923300_c26",
      "doi-asserted-by": "publisher",
      "first-page": "153",
      "DOI": "10.1063/1.1713863",
      "article-title": "Young\u2019s Modulus, Shear Modulus, and Poisson\u2019s Ratio in Silicon and Germanium",
      "volume": "36",
      "author": "Wortman",
      "journal-title": "J. Appl. Phys.",
      "ISSN": "http://id.crossref.org/issn/0021-8979",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c27",
      "first-page": "181",
      "volume-title": "Electronic Structure and the Properties of Solids",
      "author": "Harrison"
    },
    {
      "key": "2019100515452923300_c28",
      "doi-asserted-by": "publisher",
      "first-page": "113308",
      "DOI": "10.1103/PhysRevB.68.113308",
      "article-title": "Calculation of Si Nanowire Thermal Conductivity Using Complete Phonon Dispersion Relations",
      "volume": "68",
      "author": "Mingo",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c29",
      "doi-asserted-by": "publisher",
      "first-page": "637",
      "DOI": "10.1103/PhysRev.145.637",
      "article-title": "Effect of Invariance Requirements on the Elastic Strain Energy of Crystals With Application to the Diamond Structure",
      "volume": "145",
      "author": "Keating",
      "journal-title": "Phys. Rev.",
      "ISSN": "http://id.crossref.org/issn/0031-899X",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c30",
      "first-page": "42",
      "volume-title": "Atomic and Electronic Structure of Surfaces",
      "author": "Lannoo"
    },
    {
      "issue": "8",
      "key": "2019100515452923300_c31",
      "doi-asserted-by": "publisher",
      "first-page": "4397",
      "DOI": "10.1103/PhysRevB.28.4397",
      "article-title": "Effective Two-Dimensional Hamiltonian at Surfaces",
      "volume": "28",
      "author": "Guinea",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c32",
      "doi-asserted-by": "crossref",
      "DOI": "10.1115/IMECE2005-80053",
      "article-title": "Simulation of Phonon Interfacial Transport in Strained Silicon-Germanium Heterostructures",
      "volume-title": "Proceedings of the ASME International Mechanical Engineering Congress and Exposition 2005",
      "author": "Zhang"
    },
    {
      "key": "2019100515452923300_c33",
      "first-page": "223",
      "volume-title": "Quantum Transport: Atom to Transistor",
      "author": "Datta",
      "edition": "1st ed."
    },
    {
      "key": "2019100515452923300_c34",
      "doi-asserted-by": "publisher",
      "first-page": "3730",
      "DOI": "10.1063/1.1503165",
      "article-title": "Simulating Quantum Transport in Nanoscale Transistors: Real Versus Mode-Space Approaches",
      "volume": "92",
      "author": "Venugopal",
      "journal-title": "J. Appl. Phys.",
      "ISSN": "http://id.crossref.org/issn/0021-8979",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c35",
      "first-page": "108",
      "volume-title": "Introduction to Solid State Physics",
      "author": "Kittel",
      "edition": "8th ed."
    },
    {
      "key": "2019100515452923300_c36",
      "doi-asserted-by": "publisher",
      "first-page": "199",
      "DOI": "10.1006/spmi.2000.0900",
      "article-title": "Thermal Conductivity of Symmetrically Strained Si\u2215Ge Superlattices",
      "volume": "28",
      "author": "Tascius",
      "journal-title": "Superlattices Microstruct.",
      "ISSN": "http://id.crossref.org/issn/0749-6036",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c37",
      "doi-asserted-by": "publisher",
      "first-page": "4184",
      "DOI": "10.1063/1.1628819",
      "article-title": "Thermal Conductivity in Strain Symmetrized Si\u2215Ge Superlattices on Si(111)",
      "volume": "83",
      "author": "Chakraborty",
      "journal-title": "Appl. Phys. Lett.",
      "ISSN": "http://id.crossref.org/issn/0003-6951",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c38",
      "doi-asserted-by": "publisher",
      "first-page": "2957",
      "DOI": "10.1063/1.118755",
      "article-title": "Thermal Conductivity of Si-Ge Superlattices",
      "volume": "70",
      "author": "Lee",
      "journal-title": "Appl. Phys. Lett.",
      "ISSN": "http://id.crossref.org/issn/0003-6951",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c39",
      "doi-asserted-by": "publisher",
      "first-page": "16373",
      "DOI": "10.1103/PhysRevB.48.16373",
      "article-title": "Kapitza Conductance and Heat Flow Between Solids at Temperature From 50to300K",
      "volume": "48",
      "author": "Stoner",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c40",
      "doi-asserted-by": "publisher",
      "first-page": "054302",
      "DOI": "10.1103/PhysRevB.67.054302",
      "article-title": "Thermal Conductance of Epitaxial Interfaces",
      "volume": "67",
      "author": "Costescu",
      "journal-title": "Phys. Rev. B",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c41",
      "doi-asserted-by": "crossref",
      "first-page": "1749",
      "DOI": "10.1139/p76-207",
      "article-title": "Analysis of Heat Transfer Between Solids at Low Temperatures",
      "volume": "54",
      "author": "Cheeke",
      "journal-title": "Can. J. Phys.",
      "ISSN": "http://id.crossref.org/issn/0008-4204",
      "issn-type": "print"
    },
    {
      "key": "2019100515452923300_c42",
      "doi-asserted-by": "publisher",
      "first-page": "2461",
      "DOI": "10.1103/PhysRev.132.2461",
      "article-title": "Analysis of Lattice Thermal Conductivity",
      "volume": "132",
      "author": "Holland",
      "journal-title": "Phys. Rev.",
      "ISSN": "http://id.crossref.org/issn/0031-899X",
      "issn-type": "print"
    }
  ],
  "container-title": "Journal of Heat Transfer",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "http://asmedigitalcollection.asme.org/heattransfer/article-pdf/129/4/483/5674873/483_1.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "http://asmedigitalcollection.asme.org/heattransfer/article-pdf/129/4/483/5674873/483_1.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        10,
        5
      ]
    ],
    "date-time": "2019-10-05T15:45:35Z",
    "timestamp": 1570290335000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://asmedigitalcollection.asme.org/heattransfer/article/129/4/483/467562/Simulation-of-Interfacial-Phonon-Transport-in-SiGe"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        5,
        30
      ]
    ]
  },
  "references-count": 42,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2007,
          4,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1115/1.2709656",
  "relation": {},
  "ISSN": [
    "0022-1481",
    "1528-8943"
  ],
  "subject": [],
  "published": {
    "date-parts": [
      [
        2006,
        5,
        30
      ]
    ]
  }
}