Abstract
SummaryClosely correlating with {200} plane of cubic phase, {103} plane of hexagonal phase of Ge2Sb2Te5 plays a crucial role in achieving fast phase change process as well as formation of modulation structures, dislocations and twins in Ge2Sb2Te5. The behaviors of {103} plane of hexagonal phase render the phase‐change memory process as a nanoscale shape memory.
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Dates
Type | When |
---|---|
Created | 10 years, 4 months ago (March 24, 2015, 11:46 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 2, 2023, 2:53 p.m.) |
Indexed | 1 year, 10 months ago (Oct. 3, 2023, 7:17 a.m.) |
Issued | 10 years, 5 months ago (March 21, 2015) |
Published | 10 years, 5 months ago (March 21, 2015) |
Published Online | 10 years, 5 months ago (March 21, 2015) |
Published Print | 10 years, 1 month ago (July 1, 2015) |
@article{ZHANG_2015, title={How important is the {103} plane of stable Ge2Sb2Te5 for phase‐change memory?}, volume={259}, ISSN={1365-2818}, url={http://dx.doi.org/10.1111/jmi.12242}, DOI={10.1111/jmi.12242}, number={1}, journal={Journal of Microscopy}, publisher={Wiley}, author={ZHANG, W. and ZHENG, W.T. and KIM, J.‐G. and CUI, X.Q. and LI, L. and QI, J.G. and KIM, Y.‐J. and SONG, S.A.}, year={2015}, month=mar, pages={10–15} }