10.1111/j.1551-2916.2005.00663.x
Crossref journal-article
Wiley
Journal of the American Ceramic Society (311)
Abstract

The reorientation of defect dipoles and the drift of free charge carriers are the most prominent microscopic mechanisms under discussion to provoke the aging effect in ferroelectrics. These two mechanisms are contrasted taking into account the influence of grain boundaries in a polycrystalline material. For the drift model, clamping pressures on domain walls only depend on geometry and on the transport properties of the mobile defect charge carrier independent of its electronic or ionic nature. For a numerical example clamping pressures as a result of drift of oxygen vacancies are determined in BaTiO3. They range from 106 to 107 Pa corresponding to experimental values.

Bibliography

Lupascu, D. C., Genenko, Y. A., & Balke, N. (2005). Aging in Ferroelectrics. Journal of the American Ceramic Society, 89(1), 224–229. Portico.

Authors 3
  1. Doru C. Lupascu (first)
  2. Yuri A. Genenko (additional)
  3. Nina Balke (additional)
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Dates
Type When
Created 19 years, 10 months ago (Oct. 4, 2005, 4:46 a.m.)
Deposited 1 year, 10 months ago (Oct. 16, 2023, 5:20 a.m.)
Indexed 4 months ago (April 15, 2025, 11:39 a.m.)
Issued 19 years, 10 months ago (Oct. 4, 2005)
Published 19 years, 10 months ago (Oct. 4, 2005)
Published Online 19 years, 10 months ago (Oct. 4, 2005)
Published Print 19 years, 7 months ago (Jan. 1, 2006)
Funders 0

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@article{Lupascu_2005, title={Aging in Ferroelectrics}, volume={89}, ISSN={1551-2916}, url={http://dx.doi.org/10.1111/j.1551-2916.2005.00663.x}, DOI={10.1111/j.1551-2916.2005.00663.x}, number={1}, journal={Journal of the American Ceramic Society}, publisher={Wiley}, author={Lupascu, Doru C. and Genenko, Yuri A. and Balke, Nina}, year={2005}, month=oct, pages={224–229} }