DOI: 10.1111/j.1151-2916.1996.tb09002.x. High Thermal Conductivity in Silicon Nitride with Anisotropie Microstructure

High Thermal Conductivity in Silicon Nitride with Anisotropie Microstructure

10.1111/j.1151-2916.1996.tb09002.x

Crossref journal-article

Wiley

Journal of the American Ceramic Society (311)

Abstract

Silicon nitride was fabricated by tape casting of α‐Si3N4 powder with 5 wt% Y2O3 and 5 vol% rodlike β‐Si3N4 seed particles, followed by tape stacking, hot pressing under 40 MPa, and annealing at 1850°C for 2‐66 h under a nitrogen pressure of 0.9 MPa. Silicon nitrides fabricated by this procedure exhibited a highly anisotropic microstructure with large elongated grains (developed from seed particles) uniaxially oriented parallel to the casting direction. Thermal conductivities parallel to the grain alignment were much higher than those measured in other directions and exhibited high values of up to 120 W/(m.K). The anisotropic thermal conductivity of the specimen could be explained by the rule of mixture, considering that large elongated grains developed from seeds have higher thermal conductivity than a small‐grained matrix.

Bibliography

Hirao, K., Watari, K., Brito, M. E., Toriyama, M., & Kanzaki, S. (1996). High Thermal Conductivity in Silicon Nitride with Anisotropie Microstructure. Journal of the American Ceramic Society, 79(9), 2485â2488. Portico.

Authors 5

Kiyoshi Hirao (first)
Koji Watari (additional)
Manuel E. Brito (additional)
Motohiro Toriyama (additional)
Shuzo Kanzaki (additional)

References 20 Referenced 129

{'issue': '9', 'key': 'e_1_2_1_2_2', 'first-page': '1311', 'article-title': 'Gas‐Pressure Sintering of Si3N4 with Concurrent Addition of A12O3 and 5 wt% Rare Earth Oxide: High Fracture Toughness Si3N4 with Fiber‐like Structure', 'volume': '65', 'author': 'Tani E.', 'year': '1986', 'journal-title': 'Am. Ceram. Soc. Bull.'} / Am. Ceram. Soc. Bull. / Gas‐Pressure Sintering of Si3N4 with Concurrent Addition of A12O3 and 5 wt% Rare Earth Oxide: High Fracture Toughness Si3N4 with Fiber‐like Structure by Tani E. (1986)
10.1002/9780470310557.ch10
10.1111/j.1151-2916.1991.tb06872.x
10.1111/j.1151-2916.1994.tb05395.x
{'issue': '12', 'key': 'e_1_2_1_6_2', 'first-page': '1119', 'article-title': 'Thermal Conductivity of Hot‐Pressed Si3N4 by the Laser Flash Method', 'volume': '57', 'author': 'Kuriyama M.', 'year': '1978', 'journal-title': 'Am. Ceram. Soc. Bull.'} / Am. Ceram. Soc. Bull. / Thermal Conductivity of Hot‐Pressed Si3N4 by the Laser Flash Method by Kuriyama M. (1978)
10.1007/BF00738642
{'issue': '9', 'key': 'e_1_2_1_8_2', 'first-page': '910', 'article-title': 'Thermal Conductivity and Microhardness of Si3N4 with and without Additives', 'volume': '60', 'author': 'Tsukuma K.', 'year': '1981', 'journal-title': 'Am. Ceram Soc Bull.'} / Am. Ceram Soc Bull. / Thermal Conductivity and Microhardness of Si3N4 with and without Additives by Tsukuma K. (1981)
10.2109/jcersj.97.56
10.1007/BF00561287
{'issue': '6', 'key': 'e_1_2_1_11_2', 'first-page': '595', 'article-title': 'Thermal Conductivity of Reaction Bonded Si3N4', 'volume': '94', 'author': 'Hayashi K.', 'year': '1986', 'journal-title': 'J. Ceram. Soc. Jpn.'} / J. Ceram. Soc. Jpn. / Thermal Conductivity of Reaction Bonded Si3N4 by Hayashi K. (1986)
{'issue': '12', 'key': 'e_1_2_1_12_2', 'first-page': '1126', 'article-title': 'Thermal Diffusivity, Specific Heat and Thermal Conductivity of Chemically Vapor‐Deposited Si3N4', 'volume': '57', 'author': 'Hirai T.', 'year': '1978', 'journal-title': 'Am. Ceram. Soc. Bull.'} / Am. Ceram. Soc. Bull. / Thermal Diffusivity, Specific Heat and Thermal Conductivity of Chemically Vapor‐Deposited Si3N4 by Hirai T. (1978)
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{'key': 'e_1_2_1_14_2', 'first-page': '103', 'volume-title': 'Gas Pressure Effects on Materials Processing and Design', 'author': 'Li C. W.', 'year': '1992'} / Gas Pressure Effects on Materials Processing and Design by Li C. W. (1992)
{'key': 'e_1_2_1_15_2', 'volume-title': 'Gas Pressure Effects on Materials Processing and Design', 'author': 'Hirosaki N.'} / Gas Pressure Effects on Materials Processing and Design by Hirosaki N.
10.1111/j.1151-2916.1995.tb08871.x
{'issue': '9', 'key': 'e_1_2_1_17_2', 'first-page': '1071', 'article-title': 'Preparation of Rod‐like β‐Si3N4 Single Crystal Particles', 'volume': '101', 'author': 'Hirao K.', 'year': '1993', 'journal-title': 'J. Ceram. Soc. Jpn.'} / J. Ceram. Soc. Jpn. / Preparation of Rod‐like β‐Si3N4 Single Crystal Particles by Hirao K. (1993)
10.3327/jnst.12.133
{'key': 'e_1_2_1_19_2', 'first-page': '182', 'volume-title': 'Progress in Ceramic Science', 'author': 'Kingery W. D.', 'year': '1962'} / Progress in Ceramic Science by Kingery W. D. (1962)
{'key': 'e_1_2_1_20_2', 'first-page': '49', 'article-title': 'Thermal Expansion of the Nitrides and Oxynitride of Silicon in Relation to Their Structures', 'volume': '74', 'author': 'Henderson C. M. B.', 'year': '1975', 'journal-title': 'Trans. Br Ceram Soc.'} / Trans. Br Ceram Soc. / Thermal Expansion of the Nitrides and Oxynitride of Silicon in Relation to Their Structures by Henderson C. M. B. (1975)
M. E.Brito K.Hirao K.Watari M.Toriyama andS.Kanzaki. unpublished work.

Dates

Type	When
Created	19 years, 11 months ago (Sept. 28, 2005, 9:38 a.m.)
Deposited	1 year, 9 months ago (Nov. 22, 2023, 5:49 p.m.)
Indexed	1 month ago (Aug. 2, 2025, 12:42 a.m.)
Issued	29 years ago (Sept. 1, 1996)
Published	29 years ago (Sept. 1, 1996)
Published Online	19 years, 11 months ago (Sept. 28, 2005)
Published Print	29 years ago (Sept. 1, 1996)

Funders 0

None

BibTeX

@article{Hirao_1996, title={High Thermal Conductivity in Silicon Nitride with Anisotropie Microstructure}, volume={79}, ISSN={1551-2916}, url={http://dx.doi.org/10.1111/j.1151-2916.1996.tb09002.x}, DOI={10.1111/j.1151-2916.1996.tb09002.x}, number={9}, journal={Journal of the American Ceramic Society}, publisher={Wiley}, author={Hirao, Kiyoshi and Watari, Koji and Brito, Manuel E. and Toriyama, Motohiro and Kanzaki, Shuzo}, year={1996}, month=sep, pages={2485–2488} }

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