Abstract
The oxidation kinetics of Si3N4 were modeled by describing the simultaneous diffusion and reaction of interstitial oxygen that is believed to occur inside of the silicon oxynitride interlayer. The oxynitride was assumed to have a variable composition, and oxidation was described as a reaction where interstitial oxygen is incorporated into the network structure of the oxynitride and nitrogen is removed. It was assumed that both the diffusion coefficient and the solubility of interstitial oxygen decrease as the nitrogen content of the network structure increases. The results accurately describe both the formation of an oxynitride layer during oxidation, and the relatively slow oxidation kinetics of Si3N4 (compared to Si and SiC).
References
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Dates
Type | When |
---|---|
Created | 19 years, 11 months ago (Sept. 23, 2005, 10:11 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 7, 2023, 6:32 a.m.) |
Indexed | 1 year, 8 months ago (Dec. 19, 2023, 1:25 p.m.) |
Issued | 28 years, 10 months ago (Nov. 1, 1996) |
Published | 28 years, 10 months ago (Nov. 1, 1996) |
Published Online | 19 years, 11 months ago (Sept. 23, 2005) |
Published Print | 28 years, 10 months ago (Nov. 1, 1996) |
@article{Sheldon_1996, title={Silicon Nitride Oxidation Based on Oxynitride Interlayers with Graded Stoichiometry}, volume={79}, ISSN={1551-2916}, url={http://dx.doi.org/10.1111/j.1151-2916.1996.tb08742.x}, DOI={10.1111/j.1151-2916.1996.tb08742.x}, number={11}, journal={Journal of the American Ceramic Society}, publisher={Wiley}, author={Sheldon, Brian W.}, year={1996}, month=nov, pages={2993–2996} }