DOI: 10.1111/j.1151-2916.1993.tb04015.x. Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass

Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass

10.1111/j.1151-2916.1993.tb04015.x

Crossref journal-article

Wiley

Journal of the American Ceramic Society (311)

Abstract

Isothermal growth of β‐Si3N4 crystals dispersed in an oxynitride glass (Y‐Si‐Al‐O‐N) was studied by electron microscopy after heat treatment at temperatures between 1550° and 1640°C for 1 to 18 h. The β‐crystals exhibited growth striations introduced by intermediate coolings and these striations were used for developing a sophisticated technique for analysis of growth. It was determined that α/β‐transformation and Ostwald ripening can be treated as different kinetic stages of grain growth, while β‐nucleation was found to be insignificant. The mean diameter of the needlelike β‐grains was almost constant during phase transformation, indicating negligible growth of the β‐prism plane; growth was mainly one‐dimensional with the maximum mean length and aspect ratio just at the end of the phase transformation. The growth rate of the β‐basal plane was independent of diameter, indicating interface‐controlled growth. During Ostwald ripening, the length distribution broadened and the aspect ratio of smaller grains decreased. Dissolution of small grains caused an increase in the mean diameter, while the mean aspect ratio decreased.

Bibliography

KrÃ¤mer, M., Hoffmann, M. J., & Petzow, G. (1993). Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass. Journal of the American Ceramic Society, 76(11), 2778â2784. Portico.

Authors 3

Martin Krämer (first)
Michael J. Hoffmann (additional)
Günter Petzow (additional)

References 22 Referenced 118

10.1111/j.1151-2916.1973.tb12401.x
10.1007/BF00647779
10.1111/j.1151-2916.1979.tb18799.x
{'key': 'e_1_2_1_5_2', 'first-page': '669', 'volume-title': "Ceramic Microstructures '76", 'author': 'Iskoe J. L.', 'year': '1977'} / Ceramic Microstructures '76 by Iskoe J. L. (1977)
{'key': 'e_1_2_1_6_2', 'first-page': '3', 'volume-title': 'Materials Research Society Symposia Proceedings, Val. 287, Silicon Nitride Ceramics—Scientfic and Technological Advances', 'author': 'Hoffmann M. J.', 'year': '1993'} / Materials Research Society Symposia Proceedings, Val. 287, Silicon Nitride Ceramics—Scientfic and Technological Advances by Hoffmann M. J. (1993)
{'key': 'e_1_2_1_7_2', 'first-page': '226', 'volume-title': 'Progress in Nitrogen Ceramics', 'author': 'Hampshire S.', 'year': '1983'} / Progress in Nitrogen Ceramics by Hampshire S. (1983)
10.1007/BF01161167
10.1111/j.1151-2916.1990.tb06591.x
{'key': 'e_1_2_1_10_2', 'first-page': '285', 'article-title': 'Grain Growth Mechanisms in Silicon Nitride Solid Solutions', 'volume': '90', 'author': 'Hohnke H.', 'year': '1987', 'journal-title': 'Electron Microsc. Anal., Proc. Inst. Phys. Electron Microsc. Anal. Group Conf., 1987'} / Electron Microsc. Anal., Proc. Inst. Phys. Electron Microsc. Anal. Group Conf., 1987 / Grain Growth Mechanisms in Silicon Nitride Solid Solutions by Hohnke H. (1987)
10.4028/www.scientific.net/MSF.47.84
10.1016/0022-3697(61)90054-3
{'key': 'e_1_2_1_13_2', 'first-page': '35', 'article-title': 'Theorie der Alterung van Niederschlägen durch Umlosen', 'volume': '65', 'author': 'Wagner C.', 'year': '1961', 'journal-title': 'Z. Elektrochem.'} / Z. Elektrochem. / Theorie der Alterung van Niederschlägen durch Umlosen by Wagner C. (1961)
{'key': 'e_1_2_1_14_2', 'article-title': 'Grain Growth Kinetics of Si3N4 During α/β‐Transformation', 'author': 'Krämer M.', 'journal-title': 'Acta Metall. Muter.'} / Acta Metall. Muter. / Grain Growth Kinetics of Si3N4 During α/β‐Transformation by Krämer M.
R. A. L.Drew “Nitrogen Glasses ” Research Report in Materials Science Series I. Parthenon Press Casterton Hall U. K. 1986.
10.1051/jphyscol:1986143
{'key': 'e_1_2_1_17_2', 'first-page': '385', 'article-title': 'A Comparison of Different Physical‐Chemical Methods of Etching for Silicon Nitride Ceramics', 'volume': '27', 'author': 'Täffner U.', 'year': '1990', 'journal-title': 'P ract. Metalloq.'} / P ract. Metalloq. / A Comparison of Different Physical‐Chemical Methods of Etching for Silicon Nitride Ceramics by Täffner U. (1990)
10.1016/0022-3093(83)90457-X
10.1111/j.1151-2916.1984.tb19602.x
10.1002/9780470318782.ch12
10.1007/BF01748097
M.Krämer D.Kiesbye H.Küppers M. J.Hoffmann andG.Petzow “Relations between Crystal Structure and Growth Morphology of Si3N4”; unpublished work.
G.PetzowandM. J.Hoffmann “Grain Growth Studies in Si3N4‐Ceramics”; pp.91–102in Materials Science Forum Vols. 113–15 Proceedings of the International Conference on Recrystallization. 1992. Trans Tech Publications Aedermannsdorf Switzerland 1993. (10.4028/www.scientific.net/MSF.113-115.91)

Dates

Type	When
Created	20 years, 5 months ago (March 8, 2005, 11:21 a.m.)
Deposited	1 year, 9 months ago (Nov. 23, 2023, 3:08 p.m.)
Indexed	1 month ago (Aug. 2, 2025, 12:39 a.m.)
Issued	31 years, 10 months ago (Nov. 1, 1993)
Published	31 years, 10 months ago (Nov. 1, 1993)
Published Online	20 years, 5 months ago (March 8, 2005)
Published Print	31 years, 10 months ago (Nov. 1, 1993)

Funders 0

None

BibTeX

@article{Kr_mer_1993, title={Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass}, volume={76}, ISSN={1551-2916}, url={http://dx.doi.org/10.1111/j.1151-2916.1993.tb04015.x}, DOI={10.1111/j.1151-2916.1993.tb04015.x}, number={11}, journal={Journal of the American Ceramic Society}, publisher={Wiley}, author={Krämer, Martin and Hoffmann, Michael J. and Petzow, Günter}, year={1993}, month=nov, pages={2778–2784} }

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