DOI: 10.1111/j.0022-2720.2004.01327.x. FIB‐induced damage in silicon

10.1111/j.0022-2720.2004.01327.x

Crossref journal-article

Wiley

Journal of Microscopy (311)

Abstract

SummaryThe damage created in silicon transmission electron microscope specimens prepared using a focused ion beam miller is assessed using cross‐sections of trenches milled under different beam conditions. Side‐wall damage consists of an amorphous layer formed by direct interaction with the energetic gallium ion beam; a small amount of implanted gallium is also detected. By contrast, bottom‐wall damage layers are more complex and contain both amorphous films and crystalline regions that are richer in implanted gallium. More complex milling sequences show that redeposition of milled material, enriched in gallium, can occur depending on the geometry of the mill employed. The thickness of the damage layers depends strongly on beam energy, but is independent of beam current. Monte Carlo modelling of the damage formed indicates that recoil silicon atoms contribute significantly to the damaged formed in the specimen.

Bibliography

RUBANOV, S., & MUNROE, P. R. (2004). FIBâinduced damage in silicon. Journal of Microscopy, 214(3), 213â221. Portico.

Authors 2

S. RUBANOV (first)
P. R. MUNROE (additional)

References 31 Referenced 213

Bender H.(1999)Focused ion beam specimen preparation for transmission electron microscopy studies of ULSI devices.Microscopy of Semiconducting Materials 1999 Institute of Physics Conference Series 164 593–602.
Bender H.&Roussel P.(1997)Cross‐sectional transmission electron microscopy and focused ion beam study of advanced silicon devices.Microscopy of Semiconducting Materials 1997 Inst. Phys. Conf. Series 157(ed. byA. G.CullisandR.Beanland) pp.465–468.
{'key': 'e_1_2_6_4_1', 'first-page': '101', 'article-title': 'Radiation damage in ion‐milled specimens: characteristics, effects and methods of damage limitation', 'volume': '98', 'author': 'Brown L.', 'year': '1986', 'journal-title': 'Radiation Effects'} / Radiation Effects / Radiation damage in ion‐milled specimens: characteristics, effects and methods of damage limitation by Brown L. (1986)
10.1016/S0968-4328(03)00007-6
10.1007/S100050010048 / Microsc. Microanal / Transmission electron microscope specimen preparation of metal matrix composites using the focused ion beam miller by Cairney J.M. (2000)
10.1017/S1551929500052457 / Microsc. Today / TEM sample preparation using focused ion beam – capabilities and limits by Engelmann H.J. (2003)
10.1016/S0968-4328(99)00005-0
10.1016/S0304-3991(02)00193-6
10.1017/S1431927600035121 / Microsc. Microanal / Effects of ion species and energy of the amorphisation of Si duting FIB TEM sample preparation as determined by computational and experimental methods by Jamison R.B. (2000)
{'key': 'e_1_2_6_11_1', 'first-page': '557', 'article-title': 'Reduction of the side‐wall damage and gallium concentration of focused ion beam prepared TEM cross sections', 'volume': '12', 'author': 'Langford R.M.', 'year': '2000', 'journal-title': 'Proc. EUREM'} / Proc. EUREM / Reduction of the side‐wall damage and gallium concentration of focused ion beam prepared TEM cross sections by Langford R.M. (2000)
Langford R.M.&Petford‐Long A.K.(2001)The structure of damage layers in transmission electron microscope specimens in elemental and compound semiconductors after FIB fabrication.Microscopy of Semiconducting Materials XII Inst. Phys. Ser. No. 169(ed. byA. G.CullisandJ. L.Hutchison) pp.511–514.
10.1016/S0304-3991(00)00096-6
10.1557/PROC-523-03
10.1007/s11664-002-0169-5
{'key': 'e_1_2_6_16_1', 'first-page': '515', 'article-title': 'The structure of damage layers in transmission electron microscope specimens in elemental and compound semiconductors after FIB fabrication', 'author': 'Munroe P.R.', 'year': '2001', 'journal-title': 'Microscopy of Semiconducting Materials XII, Inst. Phys. Ser. No. 169'} / Microscopy of Semiconducting Materials XII, Inst. Phys. Ser. No. 169 / The structure of damage layers in transmission electron microscope specimens in elemental and compound semiconductors after FIB fabrication by Munroe P.R. (2001)
{'key': 'e_1_2_6_17_1', 'article-title': 'Artefacts in germanium transmission electron microscope specimens prepared by focused ion beam milling', 'author': 'Munroe P.R.', 'year': '2003', 'journal-title': 'Microsc. Semiconducting Materials'} / Microsc. Semiconducting Materials / Artefacts in germanium transmission electron microscope specimens prepared by focused ion beam milling by Munroe P.R. (2003)
10.1063/1.333831
10.1116/1.586537
10.1016/S0968-4328(99)00012-8
10.1007/s11661-998-0116-z
10.1017/S1431927602010097
Rubanov S.(2002)The study of focused ion beam damage in semiconductor materials.PhD thesis University of New South Wales.
10.1023/A:1010950201525
10.1016/S0167-577X(02)01202-8
10.1017/S1431927600023400 / Micosc. Microanal / Focused ion beam (FIB) damage formed during TEM sample preparation of silicon by Susnitzky D.W. (1998)
10.1017/S1431927600017025 / Microsc. Microanal / Characterization of FIB damage in silicon by Urbanik C.A. (1999)
Walker J.F.&Broom R.F.(1997)Surface damage of semiconductor TEM samples prepared by focused ion beams.Microscopy of Semiconducting Materials X Inst. Phys. Conf. Series No. 157 pp.473–478.
10.1557/PROC-157-629
10.1116/1.588213
10.1557/PROC-199-205
Zeigler J.F.(2000) Particle interactions with matter.http://www.srim.org.

Dates

Type	When
Created	21 years, 3 months ago (May 21, 2004, 11:06 a.m.)
Deposited	1 year, 10 months ago (Oct. 12, 2023, 7:20 p.m.)
Indexed	2 days, 19 hours ago (Aug. 19, 2025, 6:51 a.m.)
Issued	21 years, 3 months ago (May 21, 2004)
Published	21 years, 3 months ago (May 21, 2004)
Published Online	21 years, 3 months ago (May 21, 2004)
Published Print	21 years, 2 months ago (June 1, 2004)

Funders 0

None

BibTeX

@article{RUBANOV_2004, title={FIB‐induced damage in silicon}, volume={214}, ISSN={1365-2818}, url={http://dx.doi.org/10.1111/j.0022-2720.2004.01327.x}, DOI={10.1111/j.0022-2720.2004.01327.x}, number={3}, journal={Journal of Microscopy}, publisher={Wiley}, author={RUBANOV, S. and MUNROE, P. R.}, year={2004}, month=may, pages={213–221} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        19
      ]
    ],
    "date-time": "2025-08-19T10:51:50Z",
    "timestamp": 1755600710659
  },
  "reference-count": 31,
  "publisher": "Wiley",
  "issue": "3",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2004,
            5,
            21
          ]
        ],
        "date-time": "2004-05-21T00:00:00Z",
        "timestamp": 1085097600000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://onlinelibrary.wiley.com/termsAndConditions#vor"
    }
  ],
  "content-domain": {
    "domain": [
      "onlinelibrary.wiley.com"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        6
      ]
    ]
  },
  "abstract": "<jats:title>Summary</jats:title><jats:p>The damage created in silicon transmission electron microscope specimens prepared using a focused ion beam miller is assessed using cross\u2010sections of trenches milled under different beam conditions. Side\u2010wall damage consists of an amorphous layer formed by direct interaction with the energetic gallium ion beam; a small amount of implanted gallium is also detected. By contrast, bottom\u2010wall damage layers are more complex and contain both amorphous films and crystalline regions that are richer in implanted gallium. More complex milling sequences show that redeposition of milled material, enriched in gallium, can occur depending on the geometry of the mill employed. The thickness of the damage layers depends strongly on beam energy, but is independent of beam current. Monte Carlo modelling of the damage formed indicates that recoil silicon atoms contribute significantly to the damaged formed in the specimen.</jats:p>",
  "DOI": "10.1111/j.0022-2720.2004.01327.x",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        5,
        21
      ]
    ],
    "date-time": "2004-05-21T15:06:01Z",
    "timestamp": 1085151961000
  },
  "page": "213-221",
  "update-policy": "http://dx.doi.org/10.1002/crossmark_policy",
  "source": "Crossref",
  "is-referenced-by-count": 213,
  "title": "FIB\u2010induced damage in silicon",
  "prefix": "10.1111",
  "volume": "214",
  "author": [
    {
      "given": "S.",
      "family": "RUBANOV",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "P. R.",
      "family": "MUNROE",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "311",
  "published-online": {
    "date-parts": [
      [
        2004,
        5,
        21
      ]
    ]
  },
  "reference": [
    {
      "key": "e_1_2_6_2_1",
      "unstructured": "Bender H.(1999)Focused ion beam specimen preparation for transmission electron microscopy studies of ULSI devices.Microscopy of Semiconducting Materials 1999 Institute of Physics Conference Series 164 593\u2013602."
    },
    {
      "key": "e_1_2_6_3_1",
      "unstructured": "Bender H.&Roussel P.(1997)Cross\u2010sectional transmission electron microscopy and focused ion beam study of advanced silicon devices.Microscopy of Semiconducting Materials 1997 Inst. Phys. Conf. Series 157(ed. byA. G.CullisandR.Beanland) pp.465\u2013468."
    },
    {
      "key": "e_1_2_6_4_1",
      "first-page": "101",
      "article-title": "Radiation damage in ion\u2010milled specimens: characteristics, effects and methods of damage limitation",
      "volume": "98",
      "author": "Brown L.",
      "year": "1986",
      "journal-title": "Radiation Effects"
    },
    {
      "key": "e_1_2_6_5_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0968-4328(03)00007-6"
    },
    {
      "key": "e_1_2_6_6_1",
      "doi-asserted-by": "crossref",
      "first-page": "452",
      "DOI": "10.1007/S100050010048",
      "article-title": "Transmission electron microscope specimen preparation of metal matrix composites using the focused ion beam miller",
      "volume": "6",
      "author": "Cairney J.M.",
      "year": "2000",
      "journal-title": "Microsc. Microanal"
    },
    {
      "key": "e_1_2_6_7_1",
      "doi-asserted-by": "crossref",
      "first-page": "22",
      "DOI": "10.1017/S1551929500052457",
      "article-title": "TEM sample preparation using focused ion beam \u2013 capabilities and limits",
      "volume": "11",
      "author": "Engelmann H.J.",
      "year": "2003",
      "journal-title": "Microsc. Today"
    },
    {
      "key": "e_1_2_6_8_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0968-4328(99)00005-0"
    },
    {
      "key": "e_1_2_6_9_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0304-3991(02)00193-6"
    },
    {
      "key": "e_1_2_6_10_1",
      "doi-asserted-by": "crossref",
      "first-page": "526",
      "DOI": "10.1017/S1431927600035121",
      "article-title": "Effects of ion species and energy of the amorphisation of Si duting FIB TEM sample preparation as determined by computational and experimental methods",
      "volume": "6",
      "author": "Jamison R.B.",
      "year": "2000",
      "journal-title": "Microsc. Microanal"
    },
    {
      "key": "e_1_2_6_11_1",
      "first-page": "557",
      "article-title": "Reduction of the side\u2010wall damage and gallium concentration of focused ion beam prepared TEM cross sections",
      "volume": "12",
      "author": "Langford R.M.",
      "year": "2000",
      "journal-title": "Proc. EUREM"
    },
    {
      "key": "e_1_2_6_12_1",
      "unstructured": "Langford R.M.&Petford\u2010Long A.K.(2001)The structure of damage layers in transmission electron microscope specimens in elemental and compound semiconductors after FIB fabrication.Microscopy of Semiconducting Materials XII Inst. Phys. Ser. No. 169(ed. byA. G.CullisandJ. L.Hutchison) pp.511\u2013514."
    },
    {
      "key": "e_1_2_6_13_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0304-3991(00)00096-6"
    },
    {
      "key": "e_1_2_6_14_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/PROC-523-03"
    },
    {
      "key": "e_1_2_6_15_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/s11664-002-0169-5"
    },
    {
      "key": "e_1_2_6_16_1",
      "first-page": "515",
      "article-title": "The structure of damage layers in transmission electron microscope specimens in elemental and compound semiconductors after FIB fabrication",
      "author": "Munroe P.R.",
      "year": "2001",
      "journal-title": "Microscopy of Semiconducting Materials XII, Inst. Phys. Ser. No. 169"
    },
    {
      "key": "e_1_2_6_17_1",
      "article-title": "Artefacts in germanium transmission electron microscope specimens prepared by focused ion beam milling",
      "author": "Munroe P.R.",
      "year": "2003",
      "journal-title": "Microsc. Semiconducting Materials"
    },
    {
      "key": "e_1_2_6_18_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.333831"
    },
    {
      "key": "e_1_2_6_19_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.586537"
    },
    {
      "key": "e_1_2_6_20_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0968-4328(99)00012-8"
    },
    {
      "key": "e_1_2_6_21_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/s11661-998-0116-z"
    },
    {
      "key": "e_1_2_6_22_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1017/S1431927602010097"
    },
    {
      "key": "e_1_2_6_23_1",
      "unstructured": "Rubanov S.(2002)The study of focused ion beam damage in semiconductor materials.PhD thesis University of New South Wales."
    },
    {
      "key": "e_1_2_6_24_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1023/A:1010950201525"
    },
    {
      "key": "e_1_2_6_25_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0167-577X(02)01202-8"
    },
    {
      "key": "e_1_2_6_26_1",
      "doi-asserted-by": "crossref",
      "first-page": "656",
      "DOI": "10.1017/S1431927600023400",
      "article-title": "Focused ion beam (FIB) damage formed during TEM sample preparation of silicon",
      "volume": "4",
      "author": "Susnitzky D.W.",
      "year": "1998",
      "journal-title": "Micosc. Microanal"
    },
    {
      "key": "e_1_2_6_27_1",
      "doi-asserted-by": "crossref",
      "first-page": "740",
      "DOI": "10.1017/S1431927600017025",
      "article-title": "Characterization of FIB damage in silicon",
      "volume": "5",
      "author": "Urbanik C.A.",
      "year": "1999",
      "journal-title": "Microsc. Microanal"
    },
    {
      "key": "e_1_2_6_28_1",
      "unstructured": "Walker J.F.&Broom R.F.(1997)Surface damage of semiconductor TEM samples prepared by focused ion beams.Microscopy of Semiconducting Materials X Inst. Phys. Conf. Series No. 157 pp.473\u2013478."
    },
    {
      "key": "e_1_2_6_29_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/PROC-157-629"
    },
    {
      "key": "e_1_2_6_30_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.588213"
    },
    {
      "key": "e_1_2_6_31_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1557/PROC-199-205"
    },
    {
      "key": "e_1_2_6_32_1",
      "unstructured": "Zeigler J.F.(2000) Particle interactions with matter.http://www.srim.org."
    }
  ],
  "container-title": "Journal of Microscopy",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1111%2Fj.0022-2720.2004.01327.x",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://onlinelibrary.wiley.com/doi/pdf/10.1111/j.0022-2720.2004.01327.x",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        10,
        12
      ]
    ],
    "date-time": "2023-10-12T23:20:25Z",
    "timestamp": 1697152825000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://onlinelibrary.wiley.com/doi/10.1111/j.0022-2720.2004.01327.x"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        5,
        21
      ]
    ]
  },
  "references-count": 31,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          2004,
          6
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1111/j.0022-2720.2004.01327.x"
  ],
  "URL": "http://dx.doi.org/10.1111/j.0022-2720.2004.01327.x",
  "relation": {},
  "ISSN": [
    "0022-2720",
    "1365-2818"
  ],
  "subject": [],
  "container-title-short": "Journal of Microscopy",
  "published": {
    "date-parts": [
      [
        2004,
        5,
        21
      ]
    ]
  },
  "assertion": [
    {
      "value": "2004-05-21",
      "order": 2,
      "name": "published",
      "label": "Published",
      "group": {
        "name": "publication_history",
        "label": "Publication History"
      }
    }
  ]
}