DOI: 10.1109/vlsit.2004.1345368. Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

10.1109/vlsit.2004.1345368

Crossref proceedings-article

IEEE

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. (263)

Bibliography

Pellizzer, F., Pirovano, A., Ottogalli, F., Magistretti, M., Scaravaggi, M., Zuliani, P., Tosi, M., Benvenuti, A., Besana, P., Cadeo, S., Marangon, T., Morandi, R., Piva, R., Spandre, A., Zonca, R., Modelli, A., Varesi, E., Lowrey, T., Lacaita, A., â¦ Bez, R. (2004). Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications. Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18â19.

Authors 22

F. Pellizzer (first)
A. Pirovano (additional)
F. Ottogalli (additional)
M. Magistretti (additional)
M. Scaravaggi (additional)
P. Zuliani (additional)
M. Tosi (additional)
A. Benvenuti (additional)
P. Besana (additional)
S. Cadeo (additional)
T. Marangon (additional)
R. Morandi (additional)
R. Piva (additional)
A. Spandre (additional)
R. Zonca (additional)
A. Modelli (additional)
E. Varesi (additional)
T. Lowrey (additional)
A. Lacaita (additional)
G. Casagrande (additional)
P. Cappelletti (additional)
R. Bez (additional)

References 3 Referenced 127

{'key': 'ref3', 'article-title': 'An 8Mb Demonstrator for High Density 1.8V Phase-Change Memories', 'author': 'bedcschi', 'year': '2004', 'journal-title': 'Symp on VLSI Circ'} / Symp on VLSI Circ / An 8Mb Demonstrator for High Density 1.8V Phase-Change Memories by bedcschi (2004)
10.1109/IEDM.2003.1269376
10.1109/IEDM.2003.1269271

Dates

Type	When
Created	20 years, 9 months ago (Nov. 8, 2004, 11:28 a.m.)
Deposited	8 years, 5 months ago (March 14, 2017, 12:43 p.m.)
Indexed	1 month, 2 weeks ago (July 6, 2025, 7 p.m.)
Issued	21 years, 7 months ago (Jan. 1, 2004)
Published	21 years, 7 months ago (Jan. 1, 2004)
Published Print	21 years, 7 months ago (Jan. 1, 2004)

Funders 0

None

BibTeX

@inproceedings{Pellizzer_2004, title={Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications}, url={http://dx.doi.org/10.1109/vlsit.2004.1345368}, DOI={10.1109/vlsit.2004.1345368}, booktitle={Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.}, publisher={IEEE}, author={Pellizzer, F. and Pirovano, A. and Ottogalli, F. and Magistretti, M. and Scaravaggi, M. and Zuliani, P. and Tosi, M. and Benvenuti, A. and Besana, P. and Cadeo, S. and Marangon, T. and Morandi, R. and Piva, R. and Spandre, A. and Zonca, R. and Modelli, A. and Varesi, E. and Lowrey, T. and Lacaita, A. and Casagrande, G. and Cappelletti, P. and Bez, R.}, year={2004}, pages={18–19} }

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