DOI: 10.1109/vlsit.2003.1221141. Full integration and reliability evaluation of phase-change RAM based on 0.24 μm-CMOS technologies

Full integration and reliability evaluation of phase-change RAM based on 0.24 μm-CMOS technologies

10.1109/vlsit.2003.1221141

Crossref proceedings-article

Japan Soc. Applied Phys

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (263)

Bibliography

Hwang, Y. N., Hong, J. S., Lee, S. H., Ahn, S. J., Jeong, G. T., Koh, G. H., Oh, J. H., Kim, H. J., Jeong, W. C., Lee, S. Y., Park, J. H., Ryoo, K. C., Horii, H., Ha, Y. H., Yi, J. H., Cho, W. Y., Kim, Y. T., Lee, K. H., Joo, S. H., â¦ Kinam Kim. (n.d.). Full integration and reliability evaluation of phase-change RAM based on 0.24 Î¼m-CMOS technologies. 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), 173â174.

Authors 23

Y.N. Hwang (first)
J.S. Hong (additional)
S.H. Lee (additional)
S.J. Ahn (additional)
G.T. Jeong (additional)
G.H. Koh (additional)
J.H. Oh (additional)
H.J. Kim (additional)
W.C. Jeong (additional)
S.Y. Lee (additional)
J.H. Park (additional)
K.C. Ryoo (additional)
H. Horii (additional)
Y.H. Ha (additional)
J.H. Yi (additional)
W.Y. Cho (additional)
Y.T. Kim (additional)
K.H. Lee (additional)
S.H. Joo (additional)
S.O. Park (additional)
U.I. Chung (additional)
H.S. Jeong (additional)
Kinam Kim (additional)

References 2 Referenced 19

{'key': 'ref2', 'article-title': 'Ovonic Unified Memory-A highperformance nonvolatile memory technology for stand alone memory and embedded applications', 'author': 'gill', 'year': '2002', 'journal-title': 'Proc ISSCC'} / Proc ISSCC / Ovonic Unified Memory-A highperformance nonvolatile memory technology for stand alone memory and embedded applications by gill (2002)
{'key': 'ref1', 'first-page': '67', 'article-title': 'Amorphous nonvolatile memory: the past and the future', 'author': 'neale', 'year': '2001', 'journal-title': 'Electronic Engineering'} / Electronic Engineering / Amorphous nonvolatile memory: the past and the future by neale (2001)

Dates

Type	When
Created	21 years, 5 months ago (March 1, 2004, 9:26 p.m.)
Deposited	8 years, 5 months ago (March 13, 2017, 2:46 p.m.)
Indexed	4 months, 4 weeks ago (March 24, 2025, 2:42 a.m.)

Funders 0

None

BibTeX

@inproceedings{Hwang, series={VLSIT-03}, title={Full integration and reliability evaluation of phase-change RAM based on 0.24 μm-CMOS technologies}, url={http://dx.doi.org/10.1109/vlsit.2003.1221141}, DOI={10.1109/vlsit.2003.1221141}, booktitle={2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)}, publisher={Japan Soc. Applied Phys}, author={Hwang, Y.N. and Hong, J.S. and Lee, S.H. and Ahn, S.J. and Jeong, G.T. and Koh, G.H. and Oh, J.H. and Kim, H.J. and Jeong, W.C. and Lee, S.Y. and Park, J.H. and Ryoo, K.C. and Horii, H. and Ha, Y.H. and Yi, J.H. and Cho, W.Y. and Kim, Y.T. and Lee, K.H. and Joo, S.H. and Park, S.O. and Chung, U.I. and Jeong, H.S. and Kinam Kim}, pages={173–174}, collection={VLSIT-03} }

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