DOI: 10.1109/tns.2003.821377. Chalcogenide memory arrays: characterization and radiation effects

Chalcogenide memory arrays: characterization and radiation effects

10.1109/tns.2003.821377

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Nuclear Science (263)

Bibliography

Maimon, J. D., Hunt, K. K., Burcin, L., & Rodgers, J. (2003). Chalcogenide memory arrays: characterization and radiation effects. IEEE Transactions on Nuclear Science, 50(6), 1878â1884.

Authors 4

J.D. Maimon (first)
K.K. Hunt (additional)
L. Burcin (additional)
J. Rodgers (additional)

References 18 Referenced 65

10.1103/PhysRevLett.21.1450
10.1109/TNS.1968.4325062
10.1109/T-ED.1973.17616
10.1146/annurev.ms.02.080172.003405
{'issue': '9', 'key': 'ref5', 'article-title': 'Phase change for optical storage', 'author': 'Ovshinsky', 'year': '1999', 'journal-title': 'Bus. Tech. News Balgers Mater.'} / Bus. Tech. News Balgers Mater. / Phase change for optical storage by Ovshinsky (1999)
{'volume-title': 'Electrically erasable memory elements having improved set resistance stability', 'year': '1995', 'author': 'Ovshinsky', 'key': 'ref6'} / Electrically erasable memory elements having improved set resistance stability by Ovshinsky (1995)
{'article-title': 'A comprehensive model of submicron chalcogenide switching devices', 'year': '1996', 'author': 'Wicker', 'key': 'ref7'} / A comprehensive model of submicron chalcogenide switching devices by Wicker (1996)
10.1117/12.364449
10.1109/IEDM.2001.979636
10.1109/ISSCC.2002.993006
10.1109/VLSIT.2003.1221143
{'article-title': 'Full integration and reliability evaluation of phase-change RAM based on 0.24 $\\mu{\\rm m}$-CMOS technologies', 'volume-title': 'Proc. Dig. Tech. Papers IEEE Symp. VLSI Technol.', 'author': 'Hwang', 'key': 'ref12'} / Proc. Dig. Tech. Papers IEEE Symp. VLSI Technol. / Full integration and reliability evaluation of phase-change RAM based on 0.24 $\mu{\rm m}$-CMOS technologies by Hwang
10.1109/VLSIT.2003.1221142
10.1109/AERO.2000.878512
10.1109/aero.2001.931188
10.1109/23.903803
{'article-title': 'Integration and circuit demonstration of chalcogenide memory elements with a radiation hardened CMOS technology', 'volume-title': 'Proc. 2002 Non-Volatile Memory Technol. Symp.', 'author': 'Maimon', 'key': 'ref17'} / Proc. 2002 Non-Volatile Memory Technol. Symp. / Integration and circuit demonstration of chalcogenide memory elements with a radiation hardened CMOS technology by Maimon
10.1109/aero.2003.1235161

Dates

Type	When
Created	21 years, 5 months ago (Feb. 24, 2004, 4:01 p.m.)
Deposited	4 months, 3 weeks ago (March 31, 2025, 12:58 p.m.)
Indexed	4 months, 3 weeks ago (April 1, 2025, 12:08 a.m.)
Issued	21 years, 8 months ago (Dec. 1, 2003)
Published	21 years, 8 months ago (Dec. 1, 2003)
Published Print	21 years, 8 months ago (Dec. 1, 2003)

Funders 0

None

BibTeX

@article{Maimon_2003, title={Chalcogenide memory arrays: characterization and radiation effects}, volume={50}, ISSN={1558-1578}, url={http://dx.doi.org/10.1109/tns.2003.821377}, DOI={10.1109/tns.2003.821377}, number={6}, journal={IEEE Transactions on Nuclear Science}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Maimon, J.D. and Hunt, K.K. and Burcin, L. and Rodgers, J.}, year={2003}, month=dec, pages={1878–1884} }

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