DOI: 10.1109/tnano.2009.2038479. Comprehensive Study of Pi-Gate Nanowires Poly-Si TFT Nonvolatile Memory With an HfO $

Comprehensive Study of Pi-Gate Nanowires Poly-Si TFT Nonvolatile Memory With an HfO $_2$ Charge Trapping Layer

10.1109/tnano.2009.2038479

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Nanotechnology (263)

Bibliography

Chen, L.-J., Wu, Y.-C., Chiang, J.-H., Hung, M.-F., Chang, C.-W., & Su, P.-W. (2011). Comprehensive Study of Pi-Gate Nanowires Poly-Si TFT Nonvolatile Memory With an HfO $_2$ Charge Trapping Layer. IEEE Transactions on Nanotechnology, 10(2), 260â265.

Authors 6

Lun-Jyun Chen (first)
Yung-Chun Wu (additional)
Ji-Hong Chiang (additional)
Min-Feng Hung (additional)
Chin-Wei Chang (additional)
Po-Wen Su (additional)

References 21 Referenced 19

10.1063/1.1745104
10.1109/LED.2008.2005070
{'key': 'ref12', 'first-page': '213101-1', 'article-title': 'Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory aplications', 'volume': '91', 'author': 'chen', 'year': '2007', 'journal-title': 'Appl Phys Lett'} / Appl Phys Lett / Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory aplications by chen (2007)
10.1109/55.468277
10.1109/4.45010
10.1109/101.857747
10.1109/TED.2004.829861
10.1109/55.981318
10.1063/1.1361065
10.1109/VLSIT.2003.1221069
{'key': 'ref4', 'first-page': '182115-1', 'article-title': 'Polysilicon TFT technology for active matrix OLED displays', 'volume': '90', 'author': 'liu', 'year': '2007', 'journal-title': 'Appl Phys Lett'} / Appl Phys Lett / Polysilicon TFT technology for active matrix OLED displays by liu (2007)
10.1109/16.543029
10.1109/IEDM.2006.346903
{'key': 'ref5', 'first-page': '333', 'article-title': 'Technology for sub-50 nm DRAM and NAND flash manufacturing', 'author': 'kim', 'year': '2005', 'journal-title': 'Proc IEDM Tech Dig'} / Proc IEDM Tech Dig / Technology for sub-50 nm DRAM and NAND flash manufacturing by kim (2005)
10.1109/TED.2006.890379
10.1109/VLSIT.2003.1221070
10.1109/16.918227
10.1109/IEDM.1989.74250
10.1109/LED.2003.810888
{'key': 'ref20', 'first-page': '927', 'article-title': '2-bit Poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate', 'author': 'lin', 'year': '2005', 'journal-title': 'Proc IEDM Tech Dig'} / Proc IEDM Tech Dig / 2-bit Poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate by lin (2005)
10.1116/1.2174021

Dates

Type	When
Created	15 years, 7 months ago (Jan. 12, 2010, 3:32 p.m.)
Deposited	3 years, 10 months ago (Oct. 10, 2021, 8:45 p.m.)
Indexed	4 weeks, 1 day ago (July 23, 2025, 8:43 a.m.)
Issued	14 years, 5 months ago (March 1, 2011)
Published	14 years, 5 months ago (March 1, 2011)
Published Print	14 years, 5 months ago (March 1, 2011)

Funders 0

None

BibTeX

@article{Chen_2011, title={Comprehensive Study of Pi-Gate Nanowires Poly-Si TFT Nonvolatile Memory With an HfO $_2$ Charge Trapping Layer}, volume={10}, ISSN={1941-0085}, url={http://dx.doi.org/10.1109/tnano.2009.2038479}, DOI={10.1109/tnano.2009.2038479}, number={2}, journal={IEEE Transactions on Nanotechnology}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Chen, Lun-Jyun and Wu, Yung-Chun and Chiang, Ji-Hong and Hung, Min-Feng and Chang, Chin-Wei and Su, Po-Wen}, year={2011}, month=mar, pages={260–265} }

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