DOI: 10.1109/tmtt.1981.1130387. Design Considerations for Monolithic Microwave Circuits

Design Considerations for Monolithic Microwave Circuits

10.1109/tmtt.1981.1130387

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Microwave Theory and Techniques (263)

Bibliography

Pucel, R. A. (1981). Design Considerations for Monolithic Microwave Circuits. IEEE Transactions on Microwave Theory and Techniques, 29(6), 513â534.

Authors 1

R.A. Pucel (first)

References 23 Referenced 196

{'key': 'ref10', 'author': 'higashisaka', 'year': '0', 'journal-title': "1980 IEEE MTT-S Workshop Monolithic Microwave Analog IC's"} / 1980 IEEE MTT-S Workshop Monolithic Microwave Analog IC's by higashisaka (0)
10.1109/MWSYM.1980.1124295
10.1109/TMTT.1965.1126104
{'key': 'ref13', 'first-page': '299', 'article-title': 'Silicon-on-sapphire (SOS) monolithic transceiver module components for L- and S-band', 'volume': '8', 'author': 'laighton', 'year': '1980', 'journal-title': 'Dig Papers Government Microcircuit Applications Conf'} / Dig Papers Government Microcircuit Applications Conf / Silicon-on-sapphire (SOS) monolithic transceiver module components for L- and S-band by laighton (1980)
{'key': 'ref14', 'article-title': "A monolithic microwave switch using parallel-resonated GaAs FET's", 'author': 'mclevige', 'year': '1980', 'journal-title': 'GaAs IC Symp Res Abstracts'} / GaAs IC Symp Res Abstracts / A monolithic microwave switch using parallel-resonated GaAs FET's by mclevige (1980)
10.1109/TMTT.1968.1126717
10.1049/el:19760193 / Electron Lett / Monolithic broadband GaAs FET amplifiers by pengelly (1976)
10.1109/IEDM.1979.189597 / 1979 International Electron Devices Meeting / a monolithic gaas x-band power amplifier by pucel (1979)
10.1109/T-ED.1980.20001
{'key': 'ref19', 'article-title': 'A microstrip probe for microwave measurements on GaAs FET and IC wafers', 'author': 'strid', 'year': '1980', 'journal-title': 'GaAs IC Symp Res Abstracts'} / GaAs IC Symp Res Abstracts / A microstrip probe for microwave measurements on GaAs FET and IC wafers by strid (1980)
{'key': 'ref4', 'first-page': '28', 'article-title': 'Synthesize amplifiers exactly', 'author': 'besser', 'year': '1979', 'journal-title': 'Microwave Syst News'} / Microwave Syst News / Synthesize amplifiers exactly by besser (1979)
{'key': 'ref3', 'article-title': 'GaAs monolithic microwave multistage preamplifier', 'author': 'benavides', 'year': '1980', 'journal-title': 'GaAs IC Symp Res Abstracts'} / GaAs IC Symp Res Abstracts / GaAs monolithic microwave multistage preamplifier by benavides (1980)
10.1109/ISSCC.1981.1156197
{'key': 'ref5', 'first-page': '67', 'article-title': "MMIC's the next generation of microwave components", 'author': "ch'en", 'year': '1980', 'journal-title': 'Microwave J'} / Microwave J / MMIC's the next generation of microwave components by ch'en (1980)
10.1109/TMTT.1980.1130112
{'key': 'ref7', 'article-title': 'Design considerations for wideband monolithic power amplifiers', 'author': 'degenford', 'year': '1980', 'journal-title': 'GaAs IC Symp Res Abstracts'} / GaAs IC Symp Res Abstracts / Design considerations for wideband monolithic power amplifiers by degenford (1980)
{'key': 'ref2', 'article-title': 'An X-band monolithic GaAs balanced amplifier', 'author': 'bastida', 'year': '1980', 'journal-title': 'GaAs IC Symp Res Abstracts'} / GaAs IC Symp Res Abstracts / An X-band monolithic GaAs balanced amplifier by bastida (1980)
{'key': 'ref1', 'article-title': 'A monolithic X-band single-pole, double-throw bidirectional GaAs FET Switch', 'author': 'ayasli', 'year': '1980', 'journal-title': 'GaAs IC Symp Res Abstracts'} / GaAs IC Symp Res Abstracts / A monolithic X-band single-pole, double-throw bidirectional GaAs FET Switch by ayasli (1980)
{'key': 'ref9', 'article-title': 'GaAs integrated all-front-end at 12 GHz', 'author': 'harrop', 'year': '1980', 'journal-title': 'GaAs IC Symp Res Abstracts'} / GaAs IC Symp Res Abstracts / GaAs integrated all-front-end at 12 GHz by harrop (1980)
10.1109/IEDM.1980.189740 / 1980 International Electron Devices Meeting / advances in bulk silicon and gallium arsenide materials technology by thomas (1980)
10.1109/ISSCC.1981.1156272
10.1109/ISSCC.1980.1156049
10.1109/T-ED.1981.20313 / IEEE Transactions on Electron Devices / gaas monolithic lange and wilkinson couplers by waterman (1981)

Dates

Type	When
Created	21 years, 3 months ago (April 27, 2004, 4:22 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:48 p.m.)
Indexed	4 months ago (April 17, 2025, 2:29 a.m.)
Issued	44 years, 2 months ago (June 1, 1981)
Published	44 years, 2 months ago (June 1, 1981)
Published Print	44 years, 2 months ago (June 1, 1981)

Funders 0

None

BibTeX

@article{Pucel_1981, title={Design Considerations for Monolithic Microwave Circuits}, volume={29}, ISSN={0018-9480}, url={http://dx.doi.org/10.1109/tmtt.1981.1130387}, DOI={10.1109/tmtt.1981.1130387}, number={6}, journal={IEEE Transactions on Microwave Theory and Techniques}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Pucel, R.A.}, year={1981}, month=jun, pages={513–534} }

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