DOI: 10.1109/ted.2013.2258924. Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate

Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate

10.1109/ted.2013.2258924

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Liu, B., Gong, X., Zhan, C., Han, G., Chin, H.-C., Ling, M.-L., Li, J., Liu, Y., Hu, J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., & Yeo, Y.-C. (2013). Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate. IEEE Transactions on Electron Devices, 60(6), 1852â1860.

Authors 14

Bin Liu (first)
Xiao Gong (additional)
Chunlei Zhan (additional)
Genquan Han (additional)
Hock-Chun Chin (additional)
Moh-Lung Ling (additional)
Jie Li (additional)
Yongdong Liu (additional)
Jiangtao Hu (additional)
Nicolas Daval (additional)
Christelle Veytizou (additional)
Daniel Delprat (additional)
Bich-Yen Nguyen (additional)
Yee-Chia Yeo (additional)

References 43 Referenced 17

10.1109/SOI.1993.344561
10.1016/S0167-9317(97)00079-8
10.1149/1.2919115
10.1149/1.2820441
10.1143/JJAP.44.5811
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10.1016/j.mee.2009.03.069
10.1063/1.3068497
{'key': 'ref35', 'first-page': '1', 'article-title': "Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation", 'author': 'hu', 'year': '2008', 'journal-title': 'Proc IEEE Int Conf Electron Devices Solid-State Circuits'} / Proc IEEE Int Conf Electron Devices Solid-State Circuits / Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation by hu (2008)
10.1109/16.333844
10.1038/nature10678
10.1109/LED.2007.909841
10.1109/TED.2012.2193129
{'key': 'ref12', 'first-page': '67', 'article-title': 'Sub 50-nm FinFET: PMOS', 'author': 'huang', 'year': '1999', 'journal-title': 'Proc Int Electron Devices Meeting'} / Proc Int Electron Devices Meeting / Sub 50-nm FinFET: PMOS by huang (1999)
10.1109/16.887014
10.1109/VLSIT.2012.6242496
10.1021/nl061833b
10.1038/nature04796
10.1109/LED.2007.899329
{'key': 'ref18', 'first-page': '1', 'article-title': 'Nearly defect-free Ge gate-all-around FETs on Si substrates', 'author': 'hsu', 'year': '2011', 'journal-title': 'Proc IEEE Int Electron Devices Meeting'} / Proc IEEE Int Electron Devices Meeting / Nearly defect-free Ge gate-all-around FETs on Si substrates by hsu (2011)
10.1109/LED.2008.2000613
{'key': 'ref28', 'first-page': '20', 'author': 'tompkins', 'year': '1999', 'journal-title': "Spectroscopic Ellipsometry and Reflectometry A User's Guide"} / Spectroscopic Ellipsometry and Reflectometry A User's Guide by tompkins (1999)
10.1016/j.mseb.2006.08.014 / Mater Sci Eng B / High performance germanium MOSFETs by saraswat (2006)
10.1117/12.773003
10.1109/55.902843
{'key': 'ref6', 'first-page': '873', 'article-title': 'Record ION/IOFF performance for 65 nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability', 'author': 'mitard', 'year': '2008', 'journal-title': 'Proc IEEE Int Electron Devices Meeting'} / Proc IEEE Int Electron Devices Meeting / Record ION/IOFF performance for 65 nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability by mitard (2008)
10.1016/j.mssp.2006.08.034
10.1109/LED.2010.2050574
{'key': 'ref8', 'first-page': '1', 'article-title': 'Advancing CMOS beyond the Si roadmap with Ge and III/V devices', 'author': 'heyns', 'year': '2010', 'journal-title': 'Proc IEEE Int Electron Devices Meeting'} / Proc IEEE Int Electron Devices Meeting / Advancing CMOS beyond the Si roadmap with Ge and III/V devices by heyns (2010)
{'key': 'ref7', 'first-page': '1', 'article-title': 'High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power <formula formulatype="inline"><tex Notation="TeX">$({\\rm Vcc}=0.5~{\\rm V})$</tex></formula> III-V CMOS architecture', 'author': 'pillarisetty', 'year': '2010', 'journal-title': 'Proc IEEE Int Electron Devices Meeting'} / Proc IEEE Int Electron Devices Meeting / High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power <formula formulatype="inline"><tex Notation="TeX">$({\rm Vcc}=0.5~{\rm V})$</tex></formula> III-V CMOS architecture by pillarisetty (2010)
10.1109/55.924846
{'key': 'ref9', 'first-page': '161', 'article-title': 'High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using <formula formulatype="inline"><tex Notation="TeX">${\\rm HfO}_{2}/{\\rm Al}_{2}{\\rm O}_{3}$</tex></formula>/GeOx/Ge gate stacks fabricated by plasma post oxidation', 'author': 'zhang', 'year': '2012', 'journal-title': 'Proc Symp VLSI Technol'} / Proc Symp VLSI Technol / High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using <formula formulatype="inline"><tex Notation="TeX">${\rm HfO}_{2}/{\rm Al}_{2}{\rm O}_{3}$</tex></formula>/GeOx/Ge gate stacks fabricated by plasma post oxidation by zhang (2012)
10.1109/55.596937
{'key': 'ref20', 'first-page': '1', 'article-title': 'CMOS Compatible Ge/Si Core/shell nanowire gate-all-around pMOSFET integrated with <formula formulatype="inline"><tex Notation="TeX">${\\rm HfO}_{2}$</tex></formula>/TaN gate stack', 'author': 'peng', 'year': '2009', 'journal-title': 'Proc IEEE Int Electron Devices Meeting'} / Proc IEEE Int Electron Devices Meeting / CMOS Compatible Ge/Si Core/shell nanowire gate-all-around pMOSFET integrated with <formula formulatype="inline"><tex Notation="TeX">${\rm HfO}_{2}$</tex></formula>/TaN gate stack by peng (2009)
10.1109/VLSIT.2012.6242513
{'key': 'ref21', 'first-page': '145', 'article-title': 'Sub-100 nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity', 'author': 'royer', 'year': '2009', 'journal-title': 'Proc Int Symp VLSI Technol Syst Appl'} / Proc Int Symp VLSI Technol Syst Appl / Sub-100 nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity by royer (2009)
10.1109/ICSICT.2008.4734494
10.1016/j.mssp.2006.08.077
{'key': 'ref41', 'first-page': '15', 'article-title': 'Channel doping impact on FinFETs for 22 nm and beyond', 'author': 'lin', 'year': '2012', 'journal-title': 'Proc Symp VLSI Technol'} / Proc Symp VLSI Technol / Channel doping impact on FinFETs for 22 nm and beyond by lin (2012)
{'key': 'ref23', 'first-page': '521', 'article-title': 'Demonstration of scaled Ge p-channel FinFETs integrated on Si', 'author': 'van dal', 'year': '2012', 'journal-title': 'Proc IEEE Int Electron Devices Meeting'} / Proc IEEE Int Electron Devices Meeting / Demonstration of scaled Ge p-channel FinFETs integrated on Si by van dal (2012)
10.1063/1.2037861
10.1109/IWJT.2007.4279954
10.1109/LED.2012.2207368

Dates

Type	When
Created	12 years, 3 months ago (May 14, 2013, 2:02 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:48 p.m.)
Indexed	1 year, 6 months ago (Feb. 1, 2024, 12:25 a.m.)
Issued	12 years, 2 months ago (June 1, 2013)
Published	12 years, 2 months ago (June 1, 2013)
Published Print	12 years, 2 months ago (June 1, 2013)

Funders 0

None

BibTeX

@article{Liu_2013, title={Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate}, volume={60}, ISSN={1557-9646}, url={http://dx.doi.org/10.1109/ted.2013.2258924}, DOI={10.1109/ted.2013.2258924}, number={6}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Liu, Bin and Gong, Xiao and Zhan, Chunlei and Han, Genquan and Chin, Hock-Chun and Ling, Moh-Lung and Li, Jie and Liu, Yongdong and Hu, Jiangtao and Daval, Nicolas and Veytizou, Christelle and Delprat, Daniel and Nguyen, Bich-Yen and Yeo, Yee-Chia}, year={2013}, month=jun, pages={1852–1860} }

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