DOI: 10.1109/ted.2011.2118759. Compact Virtual-Source Current–Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

Compact Virtual-Source Current–Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

10.1109/ted.2011.2118759

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Han Wang, Hsu, A., Jing Kong, Antoniadis, D. A., & Palacios, T. (2011). Compact Virtual-Source CurrentâVoltage Model for Top- and Back-Gated Graphene Field-Effect Transistors. IEEE Transactions on Electron Devices, 58(5), 1523â1533.

Authors 5

Han Wang (first)
A Hsu (additional)
Jing Kong (additional)
D A Antoniadis (additional)
T Palacios (additional)

References 43 Referenced 69

10.1063/1.3077021
10.1016/j.sse.2007.10.054
10.1038/nmat1849
10.1109/IEDM.2003.1269398
10.1063/1.357263
10.1109/16.974760
10.1088/0953-8984/21/23/232204
10.1063/1.332170
10.1109/PROC.1967.6123
10.1038/nmat1967
10.1126/science.1125925 / Science / Electronic confinement and coherence in patterned epitaxial graphene by berger (2006)
10.1038/nphys781
10.1038/nature04233
10.1073/pnas.0704772104
10.1126/science.1130681 / Science / Controlling the electronic structure of bilayer graphene by ohta (2006)
10.1143/APEX.1.013001
10.1063/1.3131686
10.1109/TED.2009.2033419
10.1088/0957-4484/19/34/345204
10.1109/TED.2010.2051487
10.1063/1.3357398
10.1109/ESSDERC.2008.4681693
10.1126/science.1184289 / Science / 100-GHz transistors from wafer-scale epitaxial graphene by lin (2010)
10.1147/rd.504.0363
10.1109/MCOM.2010.5473873
10.1109/LED.2010.2052017
10.1109/55.596937
10.1109/LED.2009.2016443
10.1021/nl801827v
10.1109/IEDM.2010.5703423
10.1103/RevModPhys.81.109
10.1126/science.1171245 / Science / Large-area synthesis of high-quality and uniform graphene films on copper foils by li (2009)
10.1126/science.1102896 / Science / electric field effect in atomically thin carbon films by novoselov (2004)
10.1038/nnano.2008.268
10.1016/0038-1101(78)90264-2
10.1109/ICCAD.2008.4681606
10.1103/PhysRevB.78.121402
{'key': 'ref24', 'author': 'sze', 'year': '2009', 'journal-title': 'Physics of Semiconductor Devices'} / Physics of Semiconductor Devices by sze (2009)
10.1109/LED.2011.2155024
10.1002/9780470823446
10.1109/IEDM.2006.346873
10.1109/IEDM.2009.5424268
10.1109/TED.2009.2024022

Dates

Type	When
Created	14 years, 4 months ago (March 22, 2011, 11:31 a.m.)
Deposited	3 years, 10 months ago (Oct. 10, 2021, 7:52 p.m.)
Indexed	1 month ago (July 16, 2025, 9:07 a.m.)
Issued	14 years, 3 months ago (May 1, 2011)
Published	14 years, 3 months ago (May 1, 2011)
Published Print	14 years, 3 months ago (May 1, 2011)

Funders 0

None

BibTeX

@article{Han_Wang_2011, title={Compact Virtual-Source Current–Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors}, volume={58}, ISSN={1557-9646}, url={http://dx.doi.org/10.1109/ted.2011.2118759}, DOI={10.1109/ted.2011.2118759}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Han Wang and Hsu, A and Jing Kong and Antoniadis, D A and Palacios, T}, year={2011}, month=may, pages={1523–1533} }

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