DOI: 10.1109/ted.2008.927631. Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory

Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory—Experimental Demonstration and Analysis

10.1109/ted.2008.927631

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

SangBum Kim, Yuan Zhang, McVittie, J. P., Jagannathan, H., Nishi, Y., & Wong, H.-S. P. (2008). Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint MemoryâExperimental Demonstration and Analysis. IEEE Transactions on Electron Devices, 55(9), 2307â2313.

Authors 6

SangBum Kim (first)
Yuan Zhang (additional)
J.P. McVittie (additional)
H. Jagannathan (additional)
Y. Nishi (additional)
H.-S.P. Wong (additional)

References 20 Referenced 20

10.1109/VLSIT.2004.1345368
{'key': 'ref11', 'first-page': '118', 'article-title': 'highly reliable 256 mb pram with advanced ring contact technology and novel encapsulating technology', 'author': 'song', 'year': '2003', 'journal-title': 'VLSI Symp Tech Dig'} / VLSI Symp Tech Dig / highly reliable 256 mb pram with advanced ring contact technology and novel encapsulating technology by song (2003)
10.1021/la990070n
{'key': 'ref13', 'first-page': '98', 'author': 'zhang', 'year': '2007', 'journal-title': 'VLSI Symp Tech Dig'} / VLSI Symp Tech Dig by zhang (2007)
10.1063/1.1753975
10.1063/1.2410238
10.1016/j.sse.2005.10.013
10.1063/1.1335640
10.1103/PhysRevB.56.9431
10.1109/LED.2007.901347
10.1109/IEDM.2005.1609462
10.1109/IEDM.2006.346905
10.1063/1.2219007
10.1021/nl052231f
10.1109/VLSIT.2003.1221142
10.1109/IEDM.2003.1269376
10.1117/12.364449
10.1109/IEDM.2003.1269271
{'key': 'ref9', 'article-title': 'an alternative concept for phase change random access memory', 'author': 'attenborough', 'year': '2005', 'journal-title': 'EPCOS05'} / EPCOS05 / an alternative concept for phase change random access memory by attenborough (2005)
{'key': 'ref20', 'first-page': '750', 'article-title': 'an access-transistor-free (0t/1r) nonvolatile resistance random access memory (rram) using a novel threshold switching, self-rectifying chalcogenide device', 'author': 'chen', 'year': '2005', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / an access-transistor-free (0t/1r) nonvolatile resistance random access memory (rram) using a novel threshold switching, self-rectifying chalcogenide device by chen (2005)

Dates

Type	When
Created	17 years ago (Aug. 20, 2008, 7:06 a.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 10:47 a.m.)
Indexed	1 year, 3 months ago (May 3, 2024, 11:54 a.m.)
Issued	16 years, 11 months ago (Sept. 1, 2008)
Published	16 years, 11 months ago (Sept. 1, 2008)
Published Print	16 years, 11 months ago (Sept. 1, 2008)

Funders 0

None

BibTeX

@article{SangBum_Kim_2008, title={Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory—Experimental Demonstration and Analysis}, volume={55}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/ted.2008.927631}, DOI={10.1109/ted.2008.927631}, number={9}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={SangBum Kim and Yuan Zhang and McVittie, J.P. and Jagannathan, H. and Nishi, Y. and Wong, H.-S.P.}, year={2008}, month=sep, pages={2307–2313} }

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