DOI: 10.1109/ted.2004.825805. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

10.1109/ted.2004.825805

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Pirovano, A., Lacaita, A. L., Pellizzer, F., Kostylev, S. A., Benvenuti, A., & Bez, R. (2004). Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials. IEEE Transactions on Electron Devices, 51(5), 714â719.

Authors 6

A. Pirovano (first)
A.L. Lacaita (additional)
F. Pellizzer (additional)
S.A. Kostylev (additional)
A. Benvenuti (additional)
R. Bez (additional)

References 20 Referenced 333

10.1103/RevModPhys.50.209
10.1109/IEDM.2002.1175987
10.1080/00107517808210876
10.1103/PhysRevLett.36.1469
10.1063/1.30774
10.1103/PhysRevLett.28.355
10.1109/TED.2003.823243
10.1103/PhysRevLett.22.1065
10.1103/PhysRevB.7.5237
10.1103/PhysRevLett.46.1027
{'key': 'ref4', 'first-page': '202', 'article-title': 'ovonic unified memory—a high-performance nonvolatile memory technology for stand-alone memory and embedded applications', 'author': 'gill', 'year': '2002', 'journal-title': 'Proc ISSCC'} / Proc ISSCC / ovonic unified memory—a high-performance nonvolatile memory technology for stand-alone memory and embedded applications by gill (2002)
10.1109/IEDM.2001.979636
{'key': 'ref6', 'article-title': 'full integration and reliability evaluation of phase-change ram based on 0.24 <formula><tex> $\\mu$</tex></formula>m-cmos technologies', 'author': 'hwang', 'year': '2003', 'journal-title': 'Tech Dig VLSI Symp'} / Tech Dig VLSI Symp / full integration and reliability evaluation of phase-change ram based on 0.24 <formula><tex> $\mu$</tex></formula>m-cmos technologies by hwang (2003)
10.1109/VLSIT.2003.1221142
10.1080/01418637808226653
10.1103/PhysRevLett.37.1504
{'key': 'ref2', 'year': '2002', 'journal-title': 'International Technology Roadmap for Semiconductor (ITRS)'} / International Technology Roadmap for Semiconductor (ITRS) (2002)
{'key': 'ref1', 'year': '2001', 'journal-title': 'International Technology Roadmap for Semiconductor (ITRS)'} / International Technology Roadmap for Semiconductor (ITRS) (2001)
10.1063/1.328036
10.1063/1.322309

Dates

Type	When
Created	21 years, 2 months ago (June 7, 2004, 4:12 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:45 p.m.)
Indexed	3 weeks, 5 days ago (July 26, 2025, 5:13 a.m.)
Issued	21 years, 3 months ago (May 1, 2004)
Published	21 years, 3 months ago (May 1, 2004)
Published Print	21 years, 3 months ago (May 1, 2004)

Funders 0

None

BibTeX

@article{Pirovano_2004, title={Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials}, volume={51}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/ted.2004.825805}, DOI={10.1109/ted.2004.825805}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Pirovano, A. and Lacaita, A.L. and Pellizzer, F. and Kostylev, S.A. and Benvenuti, A. and Bez, R.}, year={2004}, month=may, pages={714–719} }

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