DOI: 10.1109/ted.2002.1003757. A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs

A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs

10.1109/ted.2002.1003757

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Qiang Chen, Agrawal, B., & Meindl, J. D. (2002). A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs. IEEE Transactions on Electron Devices, 49(6), 1086â1090.

Authors 3

Qiang Chen (first)
B. Agrawal (additional)
J.D. Meindl (additional)

References 13 Referenced 161

10.1109/IEDM.1992.307422
10.1109/iedm.1998.746385
10.1109/iedm.2000.904418
{'key': 'ref4', 'first-page': '322', 'article-title': 'Physical insights on double-gate MOSFETs', 'volume-title': 'Proc. Dig. Government Microcircuit Appl. Conf.', 'author': 'Fossum'} / Proc. Dig. Government Microcircuit Appl. Conf. / Physical insights on double-gate MOSFETs by Fossum
{'volume-title': 'Comparative scaling opportunities of MOSFET structures for gigascale integration (GSI)', 'year': '1994', 'author': 'Agrawal', 'key': 'ref5'} / Comparative scaling opportunities of MOSFET structures for gigascale integration (GSI) by Agrawal (1994)
10.1109/55.334669
10.1109/55.863106
10.1109/55.720194
10.1109/55.841310
10.1109/16.974719
10.1109/16.249482
10.1063/1.369589
10.1109/SOI.1998.723159

Dates

Type	When
Created	22 years, 9 months ago (Nov. 7, 2002, 2:41 p.m.)
Deposited	4 months, 3 weeks ago (April 2, 2025, 9:06 a.m.)
Indexed	2 months ago (June 25, 2025, 2:52 a.m.)
Issued	23 years, 2 months ago (June 1, 2002)
Published	23 years, 2 months ago (June 1, 2002)
Published Print	23 years, 2 months ago (June 1, 2002)

Funders 0

None

BibTeX

@article{Qiang_Chen_2002, title={A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs}, volume={49}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/ted.2002.1003757}, DOI={10.1109/ted.2002.1003757}, number={6}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Qiang Chen and Agrawal, B. and Meindl, J.D.}, year={2002}, month=jun, pages={1086–1090} }

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