DOI: 10.1109/tcad.1987.1270304. A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET

A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET

10.1109/tcad.1987.1270304

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (263)

Bibliography

Chan, P. C., Liu, R., Lau, S. K., & Pinto-Guedes, M. (1987). A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 6(4), 574â581.

Authors 4

P.C. Chan (first)
R. Liu (additional)
S.K. Lau (additional)
M. Pinto-Guedes (additional)

References 13 Referenced 11

10.21236/ADA606827 / The simulation of MOS integrated circuits using SPICE2 by vladimirescu (1980)
10.1109/IEDM.1984.190640 / 1984 International Electron Devices Meeting / a double layer metal chmos iii technology by smith (1984)
{'key': 'ref12', 'first-page': '56', 'article-title': 'A 70 ns high density CMOS DRAM', 'author': 'chwang', 'year': '1983', 'journal-title': 'ISSCC'} / ISSCC / A 70 ns high density CMOS DRAM by chwang (1983)
10.1109/T-ED.1982.20693
10.1016/0038-1101(72)90084-6
10.1109/T-ED.1978.19079 / IEEE Transactions on Electron Devices / subthreshold conduction in mosfet's by taylor (1978)
10.1109/JSSC.1974.1050462
10.1109/T-ED.1979.19449
10.1137/0111030
10.1090/qam/10666 / Quart Appl Math / A method for the solution of certain nonlinear problems in least squares by levenberg (1944)
{'key': 'ref2', 'first-page': '204', 'article-title': 'A parametric submicron MOS transistor model of weak-strong inversion and punch-through', 'author': 'grotjohn', 'year': '1983', 'journal-title': 'Proc Custom Int Circuits Conf'} / Proc Custom Int Circuits Conf / A parametric submicron MOS transistor model of weak-strong inversion and punch-through by grotjohn (1983)
10.1109/JSSC.1982.1051759
10.1109/T-ED.1983.21278 / IEEE Transactions on Electron Devices / general optimization and extraction of ic device model parameters by doganis (1983)

Dates

Type	When
Created	21 years, 3 months ago (April 28, 2004, 8:28 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:39 p.m.)
Indexed	1 year, 11 months ago (Sept. 13, 2023, 1:52 p.m.)
Issued	38 years, 1 month ago (July 1, 1987)
Published	38 years, 1 month ago (July 1, 1987)
Published Print	38 years, 1 month ago (July 1, 1987)

Funders 0

None

BibTeX

@article{Chan_1987, title={A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET}, volume={6}, ISSN={0278-0070}, url={http://dx.doi.org/10.1109/tcad.1987.1270304}, DOI={10.1109/tcad.1987.1270304}, number={4}, journal={IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Chan, P.C. and Liu, R. and Lau, S.K. and Pinto-Guedes, M.}, year={1987}, month=jul, pages={574–581} }

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