DOI: 10.1109/t-ed.1987.22928. Modeling of ambipolar a-Si:H thin-film transistors

Modeling of ambipolar a-Si:H thin-film transistors

10.1109/t-ed.1987.22928

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Neudeck, G. W., Bare, H. F., & Chung, K. Y. (1987). Modeling of ambipolar a-Si:H thin-film transistors. IEEE Transactions on Electron Devices, 34(2), 344â350.

Authors 3

G.W. Neudeck (first)
H.F. Bare (additional)
K.Y. Chung (additional)

References 16 Referenced 32

{'key': 'ref10', 'first-page': '114', 'article-title': 'An ambipolar amorphous-silicon field-effect transistor', 'volume': '14', 'author': 'pfleiderer', 'year': '1985', 'journal-title': 'Siemens Forsch -u Entwickl -Ber'} / Siemens Forsch -u Entwickl -Ber / An ambipolar amorphous-silicon field-effect transistor by pfleiderer (1985)
10.1109/T-ED.1986.22451 / IEEE Transactions on Electron Devices / elementary ambipolar field-effect transistor model by pfleiderer (1986)
10.1109/T-ED.1986.22451 / IEEE Transactions on Electron Devices / elementary ambipolar field-effect transistor model by pfleiderer (1986)
10.1016/0038-1101(86)90210-8
{'journal-title': 'Thin-Film Transistors', 'year': '1969', 'author': 'tickle', 'key': 'ref14'} / Thin-Film Transistors by tickle (1969)
10.1116/1.573479
10.1109/EDL.1986.26426 / IEEE Electron Device Letters / ion implanted contacts to a-si:h thin-film transistors by bare (1986)
10.1557/PROC-33-259
{'key': 'ref3', 'first-page': '199', 'author': 'fukai', 'year': '1981', 'journal-title': 'Amorphous Semiconductor Tech and Dev'} / Amorphous Semiconductor Tech and Dev by fukai (1981)
10.1143/JJAP.22.L370
10.1557/PROC-33-275
10.1016/0022-3093(80)90660-2
10.1063/1.327599
10.1007/BF00616310
10.1016/0038-1101(76)90149-0
10.1063/1.321328

Dates

Type	When
Created	17 years, 7 months ago (Jan. 11, 2008, 2:03 p.m.)
Deposited	1 month ago (July 22, 2025, 2:03 p.m.)
Indexed	2 weeks, 6 days ago (Aug. 2, 2025, 12:46 p.m.)
Issued	38 years, 6 months ago (Feb. 1, 1987)
Published	38 years, 6 months ago (Feb. 1, 1987)
Published Print	38 years, 6 months ago (Feb. 1, 1987)

Funders 0

None

BibTeX

@article{Neudeck_1987, title={Modeling of ambipolar a-Si:H thin-film transistors}, volume={34}, ISSN={1557-9646}, url={http://dx.doi.org/10.1109/t-ed.1987.22928}, DOI={10.1109/t-ed.1987.22928}, number={2}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Neudeck, G.W. and Bare, H.F. and Chung, K.Y.}, year={1987}, month=feb, pages={344–350} }

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