DOI: 10.1109/t-ed.1986.22539. A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer

A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer

10.1109/t-ed.1986.22539

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Hida, H., Ohata, K., Suzuki, Y., & Toyoshima, H. (1986). A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer. IEEE Transactions on Electron Devices, 33(5), 601â607.

Authors 4

H. Hida (first)
K. Ohata (additional)
Y. Suzuki (additional)
H. Toyoshima (additional)

References 0 Referenced 34

None

Dates

Type	When
Created	17 years, 7 months ago (Jan. 11, 2008, 7:03 p.m.)
Deposited	3 years, 7 months ago (Jan. 12, 2022, 11:45 a.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 5:17 p.m.)
Issued	39 years, 3 months ago (May 1, 1986)
Published	39 years, 3 months ago (May 1, 1986)
Published Print	39 years, 3 months ago (May 1, 1986)

Funders 0

None

BibTeX

@article{Hida_1986, title={A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer}, volume={33}, ISSN={1557-9646}, url={http://dx.doi.org/10.1109/t-ed.1986.22539}, DOI={10.1109/t-ed.1986.22539}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Hida, H. and Ohata, K. and Suzuki, Y. and Toyoshima, H.}, year={1986}, month=may, pages={601–607} }

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