DOI: 10.1109/t-ed.1983.21424. Semi-empirical equations for electron velocity in silicon: Part II&#8212;MOS inversion layer

Semi-empirical equations for electron velocity in silicon: Part II&#8212;MOS inversion layer

10.1109/t-ed.1983.21424

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Schwarz, S. A., & Russek, S. E. (1983). Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer. IEEE Transactions on Electron Devices, 30(12), 1634â1639.

Authors 2

S.A. Schwarz (first)
S.E. Russek (additional)

References 30 Referenced 122

10.1016/0039-6028(80)90492-6
10.1016/0022-3697(60)90228-6
10.1016/0039-6028(64)90048-2
10.1063/1.1754005
10.1016/0038-1101(72)90055-X
10.1063/1.1662292
10.1063/1.321863
10.1103/PhysRev.97.641
{'journal-title': 'Solid State Physics', 'year': '1976', 'author': 'ashcroft', 'key': 'ref17'} / Solid State Physics by ashcroft (1976)
10.1109/EDL.1983.25627
10.1016/0038-1101(69)90087-2
10.1002/pssa.2210100117
{'key': 'ref4', 'first-page': '173', 'author': 'cheng', 'year': '1971', 'journal-title': 'Proc 3rd Conf Solid State Devices'} / Proc 3rd Conf Solid State Devices by cheng (1971)
{'key': 'ref27', 'first-page': '244', 'author': 'sabnis', 'year': '1981', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig by sabnis (1981)
10.1116/1.1317775
{'journal-title': 'VLSI Electronics', 'year': '1981', 'author': 'ferry', 'key': 'ref6'} / VLSI Electronics by ferry (1981)
10.1016/0038-1101(77)90054-5
10.1016/0039-6028(72)90183-5
10.1109/T-ED.1980.20063
{'key': 'ref7', 'first-page': '18', 'author': 'sabnis', 'year': '1979', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig by sabnis (1979)
{'key': 'ref2', 'first-page': '499', 'author': 'stern', 'year': '1974', 'journal-title': 'CRC Crit Revs Sol St Sci'} / CRC Crit Revs Sol St Sci by stern (1974)
10.1063/1.332170
{'key': 'ref1', 'first-page': '477', 'author': 'greene', 'year': '1974', 'journal-title': 'CRC Crit Revs Sol St Sci'} / CRC Crit Revs Sol St Sci by greene (1974)
10.1109/T-ED.1965.15489 / IEEE Transactions on Electron Devices / electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces by leistiko (1965)
10.1016/0038-1101(69)90055-0
10.1016/0038-1101(74)90025-2
10.1103/PhysRevB.5.4891
{'key': 'ref23', 'first-page': '367', 'author': 'matsumoto', 'year': '1974', 'journal-title': 'Japan J Appl Phys'} / Japan J Appl Phys by matsumoto (1974)
{'year': '0', 'key': 'ref26'} (0)
10.1063/1.1663326 / J Appl Phys by chen (1974)

Dates

Type	When
Created	17 years, 7 months ago (Jan. 11, 2008, 2:03 p.m.)
Deposited	1 month ago (July 21, 2025, 2:06 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 2, 2025, 12:29 p.m.)
Issued	41 years, 8 months ago (Dec. 1, 1983)
Published	41 years, 8 months ago (Dec. 1, 1983)
Published Print	41 years, 8 months ago (Dec. 1, 1983)

Funders 0

None

BibTeX

@article{Schwarz_1983, title={Semi-empirical equations for electron velocity in silicon: Part II&#8212;MOS inversion layer}, volume={30}, ISSN={1557-9646}, url={http://dx.doi.org/10.1109/t-ed.1983.21424}, DOI={10.1109/t-ed.1983.21424}, number={12}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Schwarz, S.A. and Russek, S.E.}, year={1983}, month=dec, pages={1634–1639} }

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