DOI: 10.1109/t-ed.1983.21266. Monte Carlo surface scattering simulation in MOSFET structures

Monte Carlo surface scattering simulation in MOSFET structures

10.1109/t-ed.1983.21266

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Young-June Park, Ting-Wei Tang, & Navon, D. H. (1983). Monte Carlo surface scattering simulation in MOSFET structures. IEEE Transactions on Electron Devices, 30(9), 1110â1116.

Authors 3

Young-June Park (first)
Ting-Wei Tang (additional)
D.H. Navon (additional)

References 0 Referenced 20

None

Dates

Type	When
Created	17 years, 7 months ago (Jan. 11, 2008, 2:03 p.m.)
Deposited	1 month ago (July 21, 2025, 2:06 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 2, 2025, 12:29 p.m.)
Issued	41 years, 11 months ago (Sept. 1, 1983)
Published	41 years, 11 months ago (Sept. 1, 1983)
Published Print	41 years, 11 months ago (Sept. 1, 1983)

Funders 0

None

BibTeX

@article{Young_June_Park_1983, title={Monte Carlo surface scattering simulation in MOSFET structures}, volume={30}, ISSN={1557-9646}, url={http://dx.doi.org/10.1109/t-ed.1983.21266}, DOI={10.1109/t-ed.1983.21266}, number={9}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Young-June Park and Ting-Wei Tang and Navon, D.H.}, year={1983}, month=sep, pages={1110–1116} }

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