DOI: 10.1109/t-ed.1982.21050. Investigation of transient electronic transport in GaAs following high energy injection

Investigation of transient electronic transport in GaAs following high energy injection

10.1109/t-ed.1982.21050

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Tang, J. Y.-F., & Hess, K. (1982). Investigation of transient electronic transport in GaAs following high energy injection. IEEE Transactions on Electron Devices, 29(12), 1906â1911.

Authors 2

J.Y.-F. Tang (first)
K. Hess (additional)

References 0 Referenced 33

None

Dates

Type	When
Created	17 years, 7 months ago (Jan. 11, 2008, 2:03 p.m.)
Deposited	1 month ago (July 18, 2025, 1:44 p.m.)
Indexed	2 weeks, 6 days ago (Aug. 2, 2025, 12:15 p.m.)
Issued	42 years, 8 months ago (Dec. 1, 1982)
Published	42 years, 8 months ago (Dec. 1, 1982)
Published Print	42 years, 8 months ago (Dec. 1, 1982)

Funders 0

None

BibTeX

@article{Tang_1982, title={Investigation of transient electronic transport in GaAs following high energy injection}, volume={29}, ISSN={1557-9646}, url={http://dx.doi.org/10.1109/t-ed.1982.21050}, DOI={10.1109/t-ed.1982.21050}, number={12}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Tang, J.Y.-F. and Hess, K.}, year={1982}, month=dec, pages={1906–1911} }

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