DOI: 10.1109/proc.1974.9600. Characterization of silicon metallization systems using energetic ion backscattering

Characterization of silicon metallization systems using energetic ion backscattering

10.1109/proc.1974.9600

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IEEE (263)

Bibliography

Borders, J. A., & Picraux, S. T. (1974). Characterization of silicon metallization systems using energetic ion backscattering. Proceedings of the IEEE, 62(9), 1224â1231.

Authors 2

J.A. Borders (first)
S.T. Picraux (additional)

References 0 Referenced 35

None

Dates

Type	When
Created	17 years, 2 months ago (June 12, 2008, 12:15 p.m.)
Deposited	3 years, 9 months ago (Nov. 29, 2021, 3:34 p.m.)
Indexed	1 year, 3 months ago (May 29, 2024, 1:09 a.m.)
Issued	51 years, 8 months ago (Jan. 1, 1974)
Published	51 years, 8 months ago (Jan. 1, 1974)
Published Print	51 years, 8 months ago (Jan. 1, 1974)

Funders 0

None

BibTeX

@article{Borders_1974, title={Characterization of silicon metallization systems using energetic ion backscattering}, volume={62}, ISSN={0018-9219}, url={http://dx.doi.org/10.1109/proc.1974.9600}, DOI={10.1109/proc.1974.9600}, number={9}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Borders, J.A. and Picraux, S.T.}, year={1974}, pages={1224–1231} }

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