DOI: 10.1109/proc.1971.8333. MOSFET memory circuits

MOSFET memory circuits

10.1109/proc.1971.8333

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IEEE (263)

Bibliography

Terman, L. M. (1971). MOSFET memory circuits. Proceedings of the IEEE, 59(7), 1044â1058.

Authors 1

L.M. Terman (first)

References 57 Referenced 32

{'key': 'ref39', 'year': '0'} (0)
10.1109/JSSC.1969.1050014
10.1109/JSSC.1969.1049974
{'key': 'ref32', 'first-page': '372', 'article-title': 'The performance of complementary MOS transistors on insulating substrates', 'volume': '31', 'author': 'boleky', 'year': '1970', 'journal-title': 'RCA Rev'} / RCA Rev / The performance of complementary MOS transistors on insulating substrates by boleky (1970)
{'key': 'ref31', 'first-page': '627', 'article-title': 'Switching response of complementary-symmetry MOS transistor logic circuits', 'author': 'burns', 'year': '1964', 'journal-title': 'RCA Rev'} / RCA Rev / Switching response of complementary-symmetry MOS transistor logic circuits by burns (1964)
10.1109/ISSCC.1963.1157450
10.1109/ISSCC.1970.1154834
10.1109/JSSC.1967.1049820
{'key': 'ref35', 'first-page': '46', 'author': 'herzog', 'year': '1967', 'journal-title': 'Large scale integrated circuit arrays'} / Large scale integrated circuit arrays by herzog (1967)
{'key': 'ref34', 'year': '1969', 'journal-title': 'Complementary field effect transistor transmission gate'} / Complementary field effect transistor transmission gate (1969)
{'key': 'ref28', 'year': '1965', 'journal-title': 'Tech spec'} / Tech spec (1965)
10.1109/ISSCC.1970.1154839
{'key': 'ref29', 'first-page': '2149', 'article-title': 'Two-way four phase MOSFET dynamic shift register', 'volume': '12', 'author': 'shen', 'year': '1970', 'journal-title': 'IBM Tech Disclosure Bull'} / IBM Tech Disclosure Bull / Two-way four phase MOSFET dynamic shift register by shen (1970)
10.1145/1476706.1476745
10.1109/PROC.1968.6512 / Proceedings of the IEEE / large-capacity semiconductor memory by hodges (1968)
10.1145/1465611.1465661
10.1145/1478462.1478470
10.1109/ISSCC.1968.1154647
{'key': 'ref24', 'year': '1968', 'journal-title': 'Field-effect transistor memory'} / Field-effect transistor memory (1968)
{'key': 'ref23', 'first-page': '109', 'article-title': 'Random access MOS memory packs more bits to the chip', 'author': 'boysel', 'year': '1970', 'journal-title': 'Electronics'} / Electronics / Random access MOS memory packs more bits to the chip by boysel (1970)
10.1109/JSSC.1969.1049977
{'key': 'ref25', 'first-page': '30', 'article-title': 'Metal Oxide Silicon Integrated Circuits', 'author': 'bogert', 'year': '1966', 'journal-title': 'Solid State Technol'} / Solid State Technol / Metal Oxide Silicon Integrated Circuits by bogert (1966)
{'key': 'ref50', 'first-page': '93', 'article-title': 'Memory on a chip: a step toward large-scale integration', 'author': 'boysel', 'year': '1967', 'journal-title': 'Electronics'} / Electronics / Memory on a chip: a step toward large-scale integration by boysel (1967)
{'key': 'ref51', 'article-title': '2048 bit MTOS read only memory', 'author': 'varadi', 'year': '1968', 'journal-title': '1968 Computer Group Conf Dig'} / 1968 Computer Group Conf Dig / 2048 bit MTOS read only memory by varadi (1968)
{'key': 'ref3b', 'first-page': '584', 'volume': 'mag 6', 'year': '1970', 'journal-title': 'IEEE Trans Magn'} / IEEE Trans Magn (1970)
{'key': 'ref3a', 'first-page': '11.1', 'article-title': 'Semiconductor memory', 'year': '1970', 'journal-title': '1970 Digest INTERMAG Conf'} / 1970 Digest INTERMAG Conf / Semiconductor memory (1970)
10.1109/T-ED.1971.17321 / IEEE Transactions on Electron Devices / charge-coupled imaging devices: experimental results by tompsett (1971)
10.1002/j.1538-7305.1970.tb01790.x
{'key': 'ref54', 'first-page': '86', 'article-title': 'Ion implantation offers a bagful of benefits for MOS', 'author': 'macdougall', 'year': '1970', 'journal-title': 'Electronics'} / Electronics / Ion implantation offers a bagful of benefits for MOS by macdougall (1970)
{'key': 'ref53', 'author': 'rapp', 'year': '1969', 'journal-title': 'IEEE Int Solid-State Circuits Conf'} / IEEE Int Solid-State Circuits Conf by rapp (1969)
{'key': 'ref52', 'first-page': '50', 'article-title': 'Multiphase clocking achieves 100 ns MOS memory', 'author': 'boysel', 'year': '1968', 'journal-title': 'EDN'} / EDN / Multiphase clocking achieves 100 ns MOS memory by boysel (1968)
{'key': 'ref10', 'first-page': '141', 'article-title': 'Four phase LSI logic offers new approach to computer design', 'author': 'boysel', 'year': '1970', 'journal-title': 'Computer'} / Computer / Four phase LSI logic offers new approach to computer design by boysel (1970)
10.1109/ISSCC.1970.1154836
{'key': 'ref40', 'first-page': '469', 'article-title': 'Silicon-on-sapphire complementary MOS circuits for high speed associative memory', 'author': 'burns', 'year': '1969', 'journal-title': 'AFIPS Fall Joint Computer Conf Proc'} / AFIPS Fall Joint Computer Conf Proc / Silicon-on-sapphire complementary MOS circuits for high speed associative memory by burns (1969)
10.1109/PGEC.1966.264348
10.1109/ISSCC.1966.1157714
10.1109/JSSC.1969.1050021
{'key': 'ref15', 'first-page': '479', 'article-title': 'A main frame semiconductor memory for fourth generation computers', 'author': 'hartz', 'year': '1969', 'journal-title': 'AFIPS Fall Joint Comput Conf Proc'} / AFIPS Fall Joint Comput Conf Proc / A main frame semiconductor memory for fourth generation computers by hartz (1969)
10.1109/JSSC.1969.1050015
10.1109/ISSCC.1970.1154796
10.1109/MSPEC.1969.5214116
{'key': 'ref19', 'first-page': '21', 'article-title': 'Integrated MOS random-access memory', 'author': 'schmidt', 'year': '1965', 'journal-title': 'Solid-State Design'} / Solid-State Design / Integrated MOS random-access memory by schmidt (1965)
{'key': 'ref4', 'first-page': '63', 'article-title': 'A survey of mainframe computer memories', 'author': 'bremer', 'year': '1970', 'journal-title': 'Computer Design'} / Computer Design / A survey of mainframe computer memories by bremer (1970)
{'key': 'ref6', 'first-page': '71', 'author': 'crawford', 'year': '1967', 'journal-title': 'MOSFET in Circuit Design'} / MOSFET in Circuit Design by crawford (1967)
{'key': 'ref5', 'first-page': '28', 'article-title': 'Why semiconductor memories?', 'author': 'graham', 'year': '1970', 'journal-title': 'Electron Prod'} / Electron Prod / Why semiconductor memories? by graham (1970)
10.1109/JSSC.1967.1049821
10.1109/ISSCC.1969.1154741
{'key': 'ref7', 'first-page': '62', 'article-title': 'Use four-phase MOS IC logic', 'author': 'karp', 'year': '1967', 'journal-title': 'Electron Des'} / Electron Des / Use four-phase MOS IC logic by karp (1967)
{'key': 'ref9', 'first-page': '170', 'article-title': 'MTOS four phase clock systems', 'author': 'cohen', 'year': '1967', 'journal-title': 'NEREM Rec'} / NEREM Rec / MTOS four phase clock systems by cohen (1967)
{'key': 'ref46', 'author': 'wegener', 'year': '1969', 'journal-title': 'Metal-insulator-semiconductor transistor for use as a nonvolatile digital storage element'} / Metal-insulator-semiconductor transistor for use as a nonvolatile digital storage element by wegener (1969)
{'key': 'ref45', 'first-page': '366', 'article-title': 'Theory and switching behavior of MIS memory transistors', 'volume': '30', 'author': 'ross', 'year': '1969', 'journal-title': 'RCA Rev'} / RCA Rev / Theory and switching behavior of MIS memory transistors by ross (1969)
10.1109/PROC.1970.7897
10.1109/PROC.1969.7185 / Proceedings of the IEEE / an integrated metal-nitride-oxide-silicon (mnos) memory by frohman-bentchkowsky (1969)
{'key': 'ref42', 'first-page': '35', 'article-title': 'Applying the versatile MOS ROM', 'author': 'wunner', 'year': '1970', 'journal-title': 'Electron Prod'} / Electron Prod / Applying the versatile MOS ROM by wunner (1970)
{'key': 'ref41', 'article-title': 'Computer memories and the impact of semiconductor technology', 'author': 'rajchman', 'year': '1969', 'journal-title': 'IEEE Internaltional Electron Device Meeting'} / IEEE Internaltional Electron Device Meeting / Computer memories and the impact of semiconductor technology by rajchman (1969)
10.1109/T-ED.1969.16733 / IEEE Transactions on Electron Devices / switching and storage characteristics of mis memory transistors by wallmark (1969)
10.1109/T-ED.1968.16265 / IEEE Transactions on Electron Devices / the variable-threshold transistor, a new electrically-alterable, nondestructive read-only storage device by wegener (1968)

Dates

Type	When
Created	17 years, 2 months ago (June 12, 2008, 11:54 a.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:33 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 10:31 p.m.)
Issued	54 years, 7 months ago (Jan. 1, 1971)
Published	54 years, 7 months ago (Jan. 1, 1971)
Published Print	54 years, 7 months ago (Jan. 1, 1971)

Funders 0

None

BibTeX

@article{Terman_1971, title={MOSFET memory circuits}, volume={59}, ISSN={0018-9219}, url={http://dx.doi.org/10.1109/proc.1971.8333}, DOI={10.1109/proc.1971.8333}, number={7}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Terman, L.M.}, year={1971}, pages={1044–1058} }

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