DOI: 10.1109/proc.1970.7897. The metal-nitride-oxide-silicon (MNOS) transistor

The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications

10.1109/proc.1970.7897

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IEEE (263)

Bibliography

Frohman-Bentchkowsky, D. (1970). The metal-nitride-oxide-silicon (MNOS) transistorâCharacteristics and applications. Proceedings of the IEEE, 58(8), 1207â1219.

Authors 1

D. Frohman-Bentchkowsky (first)

References 22 Referenced 66

10.1109/T-ED.1967.16101
10.1149/1.2411146
10.1149/1.2411484
{'key': 'ref12', 'author': 'grove', 'year': '1967', 'journal-title': 'Physics and Technology of Semiconductor Devices'} / Physics and Technology of Semiconductor Devices by grove (1967)
10.1109/T-ED.1964.15336
{'key': 'ref14', 'article-title': 'Dependence of the Si<subscript>3</subscript>N<subscript>4</subscript>-SiO<subscript>2</subscript> interface charge in MNOS structures on dielectric properties', 'author': 'rodriguez', 'year': '1969', 'journal-title': 'Electrochemical Soc Fall Meet'} / Electrochemical Soc Fall Meet / Dependence of the Si<subscript>3</subscript>N<subscript>4</subscript>-SiO<subscript>2</subscript> interface charge in MNOS structures on dielectric properties by rodriguez (1969)
10.1063/1.1657043
10.1109/T-ED.1968.16544 / IEEE Transactions on Electron Devices / additional bibliography of metal—insulator—semiconductor studies by schlegel (1968)
10.1063/1.1710030
{'key': 'ref17', 'first-page': '367', 'article-title': 'Theory of the switching behavior of MIS memory transistors', 'volume': '30', 'author': 'ross', 'year': '1969', 'journal-title': 'RCA Rev'} / RCA Rev / Theory of the switching behavior of MIS memory transistors by ross (1969)
10.1063/1.1652705
10.1109/PROC.1969.7185 / Proceedings of the IEEE / an integrated metal-nitride-oxide-silicon (mnos) memory by frohman-bentchkowsky (1969)
10.1063/1.1651983
10.1063/1.1754868
10.1109/T-ED.1969.16733 / IEEE Transactions on Electron Devices / switching and storage characteristics of mis memory transistors by wallmark (1969)
10.1109/IEDM.1968.188066 / 1968 International Electron Devices Meeting / monos memory element by keshavan (1968)
10.1063/1.1658181
10.1109/T-ED.1968.16265 / IEEE Transactions on Electron Devices / the variable-threshold transistor, a new electrically-alterable, nondestructive read-only storage device by wegener (1968)
10.1016/0038-1101(67)90003-2
10.1109/PROC.1966.4607 / Proceedings of the IEEE / a new insulated-gate silicon transistor by tombs (1966)
{'key': 'ref20', 'author': 'wegener', 'year': '1969', 'journal-title': 'Air Force Avionics Laboratory Tech Rept'} / Air Force Avionics Laboratory Tech Rept by wegener (1969)
10.1109/ISSCC.1969.1154741

Dates

Type	When
Created	17 years, 2 months ago (June 12, 2008, 11:54 a.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:33 p.m.)
Indexed	4 months, 3 weeks ago (April 2, 2025, 9:03 a.m.)
Issued	55 years, 7 months ago (Jan. 1, 1970)
Published	55 years, 7 months ago (Jan. 1, 1970)
Published Print	55 years, 7 months ago (Jan. 1, 1970)

Funders 0

None

BibTeX

@article{Frohman_Bentchkowsky_1970, title={The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications}, volume={58}, ISSN={0018-9219}, url={http://dx.doi.org/10.1109/proc.1970.7897}, DOI={10.1109/proc.1970.7897}, number={8}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Frohman-Bentchkowsky, D.}, year={1970}, pages={1207–1219} }

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