DOI: 10.1109/proc.1969.7325. Shallow phosphorus diffusion profiles in silicon

Shallow phosphorus diffusion profiles in silicon

10.1109/proc.1969.7325

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IEEE (263)

Bibliography

Tsai, J. C. C. (1969). Shallow phosphorus diffusion profiles in silicon. Proceedings of the IEEE, 57(9), 1499â1506.

Authors 1

J.C.C. Tsai (first)

References 0 Referenced 71

None

Dates

Type	When
Created	17 years, 2 months ago (June 12, 2008, 7:38 a.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 10:33 a.m.)
Indexed	10 months, 2 weeks ago (Oct. 5, 2024, 8:37 p.m.)
Issued	56 years, 7 months ago (Jan. 1, 1969)
Published	56 years, 7 months ago (Jan. 1, 1969)
Published Print	56 years, 7 months ago (Jan. 1, 1969)

Funders 0

None

BibTeX

@article{Tsai_1969, title={Shallow phosphorus diffusion profiles in silicon}, volume={57}, ISSN={0018-9219}, url={http://dx.doi.org/10.1109/proc.1969.7325}, DOI={10.1109/proc.1969.7325}, number={9}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Tsai, J.C.C.}, year={1969}, pages={1499–1506} }

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