DOI: 10.1109/proc.1969.7320. The influence of crystal orientation on silicon semiconductor processing

The influence of crystal orientation on silicon semiconductor processing

10.1109/proc.1969.7320

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IEEE (263)

Bibliography

Bean, K. E., & Gleim, P. S. (1969). The influence of crystal orientation on silicon semiconductor processing. Proceedings of the IEEE, 57(9), 1469â1476.

Authors 2

K.E. Bean (first)
P.S. Gleim (additional)

References 0 Referenced 40

None

Dates

Type	When
Created	17 years, 2 months ago (June 12, 2008, 11:38 a.m.)
Deposited	3 years, 9 months ago (Nov. 29, 2021, 3:33 p.m.)
Indexed	2 months, 1 week ago (June 25, 2025, 8:52 p.m.)
Issued	56 years, 8 months ago (Jan. 1, 1969)
Published	56 years, 8 months ago (Jan. 1, 1969)
Published Print	56 years, 8 months ago (Jan. 1, 1969)

Funders 0

None

BibTeX

@article{Bean_1969, title={The influence of crystal orientation on silicon semiconductor processing}, volume={57}, ISSN={0018-9219}, url={http://dx.doi.org/10.1109/proc.1969.7320}, DOI={10.1109/proc.1969.7320}, number={9}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Bean, K.E. and Gleim, P.S.}, year={1969}, pages={1469–1476} }

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