DOI: 10.1109/proc.1967.5630. The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers

The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers

10.1109/proc.1967.5630

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IEEE (263)

Bibliography

Chih-Tang Sah. (1967). The equivalent circuit model in solid-state electronicsâPart I: The single energy level defect centers. Proceedings of the IEEE, 55(5), 654â671.

Authors 1

Chih-Tang Sah (first)

References 19 Referenced 102

10.1103/PhysRev.87.835
{'key': 'ref10', 'year': '1963', 'journal-title': 'Letter Symbols for Semiconductor Devices'} / Letter Symbols for Semiconductor Devices (1963)
10.1103/PhysRev.87.387
10.1103/PhysRev.105.1168
10.1109/T-ED.1964.15337 / IEEE Trans on Electron Devices / Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions by sah (1964)
10.1109/PROC.1964.3123 / Proceedings of the IEEE / theory of low-frequency generation noise in junction-gate field-effect transistors by sah (1964)
10.1016/0038-1101(65)90036-5
{'key': 'ref12b', 'first-page': '53', 'volume': '5', 'author': 'mclean', 'year': '1960', 'journal-title': 'Progress in Semiconductors'} / Progress in Semiconductors by mclean (1960)
10.1109/JRPROC.1958.286896
10.1109/JRPROC.1958.286837
10.1049/pi-b-2.1959.0171
10.1103/PhysRev.109.1103
{'key': 'ref2', 'author': 'linvill', 'year': '1963', 'journal-title': 'Models of Transistors and Diodes'} / Models of Transistors and Diodes by linvill (1963)
10.1002/j.1538-7305.1949.tb03645.x
10.1103/PhysRev.105.524
{'key': 'ref11c', 'author': 'suh', 'year': '0'} by suh (0)
{'key': 'ref8a', 'author': 'sah', 'year': '1964', 'journal-title': 'Theory of the metal oxide semiconductor capacitor'} / Theory of the metal oxide semiconductor capacitor by sah (1964)
{'key': 'ref8b', 'year': '0'} (0)
{'key': 'ref5a', 'first-page': '228', 'article-title': 'Germanium rectifier characteristics', 'volume': '83', 'author': 'hall', 'year': '1951', 'journal-title': 'Phys Rev'} / Phys Rev / Germanium rectifier characteristics by hall (1951)

Dates

Type	When
Created	17 years, 2 months ago (June 12, 2008, 11:34 a.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:37 p.m.)
Indexed	4 months ago (April 17, 2025, 10:48 a.m.)
Issued	58 years, 7 months ago (Jan. 1, 1967)
Published	58 years, 7 months ago (Jan. 1, 1967)
Published Print	58 years, 7 months ago (Jan. 1, 1967)

Funders 0

None

BibTeX

@article{Chih_Tang_Sah_1967, title={The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers}, volume={55}, ISSN={0018-9219}, url={http://dx.doi.org/10.1109/proc.1967.5630}, DOI={10.1109/proc.1967.5630}, number={5}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Chih-Tang Sah}, year={1967}, pages={654–671} }

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