Crossref
proceedings-article
IEEE
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) (263)
References
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Dates
Type | When |
---|---|
Created | 15 years, 2 months ago (May 26, 2010, 8:51 a.m.) |
Deposited | 8 years, 2 months ago (June 19, 2017, 12:40 a.m.) |
Indexed | 9 months, 4 weeks ago (Oct. 23, 2024, 1:27 a.m.) |
Issued | 15 years, 10 months ago (Oct. 1, 2009) |
Published | 15 years, 10 months ago (Oct. 1, 2009) |
Published Print | 15 years, 10 months ago (Oct. 1, 2009) |
@inproceedings{Cheng_2009, title={Influence of interfaces on the crystallization characteristics of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>}, url={http://dx.doi.org/10.1109/nvmt.2009.5465042}, DOI={10.1109/nvmt.2009.5465042}, booktitle={2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)}, publisher={IEEE}, author={Cheng, Huai-Yu and Raoux, Simone and Munoz, Becky and Jordan-Sweet, Jean}, year={2009}, month=oct, pages={1–6} }