DOI: 10.1109/led.2013.2244057. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

10.1109/led.2013.2244057

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters (263)

Bibliography

Sasaki, K., Higashiwaki, M., Kuramata, A., Masui, T., & Yamakoshi, S. (2013). $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$â $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates. IEEE Electron Device Letters, 34(4), 493â495.

Authors 5

Kohei Sasaki (first)
Masataka Higashiwaki (additional)
Akito Kuramata (additional)
Takekazu Masui (additional)
Shigenobu Yamakoshi (additional)

References 12 Referenced 396

10.1109/55.43098
10.1143/APEX.5.035502
10.1002/1521-396X(199707)162:1<389::AID-PSSA389>3.0.CO;2-X
10.1143/JJAP.47.8506
10.1109/16.748862
10.1063/1.119233
10.1063/1.115948
{'key': 'ref8', 'first-page': '378', 'author': 'sze', 'year': '1969', 'journal-title': 'Physics of Semiconductor Devices'} / Physics of Semiconductor Devices by sze (1969)
10.1143/JJAP.48.040208
10.1063/1.3674287 / Appl Phys Lett / Gallium oxide <ref_formula><tex Notation="TeX">$(\hbox{Ga}_{2} \hbox{O}_{3})$</tex></ref_formula> metal–semiconductor field-effect transistors on single-crystal <formula formulatype="inline"><tex Notation="TeX">$\beta$</tex> </formula>–<formula formulatype="inline"><tex Notation="TeX">$\hbox{Ga}_{2} \hbox{O}_{3}$</tex></formula> (010) substrates by higashiwaki (2012)
10.1103/PhysRevB.74.195123
10.1103/PhysRev.140.A316

Dates

Type	When
Created	12 years, 5 months ago (March 21, 2013, 2:02 p.m.)
Deposited	3 years, 7 months ago (Jan. 12, 2022, 11:23 a.m.)
Indexed	15 hours, 24 minutes ago (Aug. 21, 2025, 1:44 p.m.)
Issued	12 years, 4 months ago (April 1, 2013)
Published	12 years, 4 months ago (April 1, 2013)
Published Print	12 years, 4 months ago (April 1, 2013)

Funders 0

None

BibTeX

@article{Sasaki_2013, title={$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates}, volume={34}, ISSN={1558-0563}, url={http://dx.doi.org/10.1109/led.2013.2244057}, DOI={10.1109/led.2013.2244057}, number={4}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Sasaki, Kohei and Higashiwaki, Masataka and Kuramata, Akito and Masui, Takekazu and Yamakoshi, Shigenobu}, year={2013}, month=apr, pages={493–495} }

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