Crossref
journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Electron Device Letters (263)
References
15
Referenced
120
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{'key': 'ref11', 'first-page': '18', 'article-title': 'Novel $\\mu$ trench phase-change memory cell for embedded and stand-alone nonvolatile memory applications', 'volume-title': 'Symp. VLSI Tech. Dig.', 'author': 'Pellizzer'}
/ Symp. VLSI Tech. Dig. / Novel $\mu$ trench phase-change memory cell for embedded and stand-alone nonvolatile memory applications by Pellizzer10.1103/PhysRevLett.21.1450
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10.1109/TED.2004.825805
Dates
Type | When |
---|---|
Created | 20 years, 10 months ago (Sept. 28, 2004, 9:50 a.m.) |
Deposited | 4 months ago (April 21, 2025, 12:44 a.m.) |
Indexed | 4 months ago (April 22, 2025, midnight) |
Issued | 20 years, 10 months ago (Oct. 1, 2004) |
Published | 20 years, 10 months ago (Oct. 1, 2004) |
Published Print | 20 years, 10 months ago (Oct. 1, 2004) |
@article{Redaelli_2004, title={Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials}, volume={25}, ISSN={0741-3106}, url={http://dx.doi.org/10.1109/led.2004.836032}, DOI={10.1109/led.2004.836032}, number={10}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Redaelli, A. and Pirovano, A. and Pellizzer, F. and Lacaita, A.L. and Ielmini, D. and Bez, R.}, year={2004}, month=oct, pages={684–686} }