DOI: 10.1109/led.2003.815154. Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

10.1109/led.2003.815154

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters (263)

Bibliography

Ng, C. H., Chew, K. W., & Chu, S. F. (2003). Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors. IEEE Electron Device Letters, 24(8), 506â508.

Authors 3

C.H. Ng (first)
K.W. Chew (additional)
S.F. Chu (additional)

References 19 Referenced 57

10.1109/LED.2002.802602
10.1109/led.2002.808159
10.1109/94.933363
10.1109/ectc.1999.776315
10.1063/1.1381043
10.1109/55.992833
{'key': 'ref7', 'first-page': '60', 'article-title': 'MIM capacitors using atomic-layer-deposited high-k $({\\hbox {HfO}}_{2})_{1-{\\rm x}}({\\hbox {Al}}_{2}{\\hbox {O}}_{3})_{\\rm x}$ dielectrics', 'volume': '24', 'author': 'Hu', 'year': '2003', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. / MIM capacitors using atomic-layer-deposited high-k $({\hbox {HfO}}_{2})_{1-{\rm x}}({\hbox {Al}}_{2}{\hbox {O}}_{3})_{\rm x}$ dielectrics by Hu (2003)
{'key': 'ref8', 'first-page': '823', 'article-title': 'Advanced dielectric for gate oxide, DRAM and RF capacitors', 'volume-title': 'IEDM Tech. Dig.', 'author': 'Van Dover'} / IEDM Tech. Dig. / Advanced dielectric for gate oxide, DRAM and RF capacitors by Van Dover
10.1109/55.992835
10.1109/LED.2002.802586
10.1109/55.919238
10.1109/IITC.1999.787134
{'key': 'ref13', 'first-page': '241', 'article-title': 'Characterization and comparison of two metal-insulator-metal capacitor schemes in 0.13 $\\mu{\\hbox {m}}$ copper damascene metallization process for mixed-mode and RF applications', 'volume-title': 'IEDM Tech. Dig.', 'author': 'Ng'} / IEDM Tech. Dig. / Characterization and comparison of two metal-insulator-metal capacitor schemes in 0.13 $\mu{\hbox {m}}$ copper damascene metallization process for mixed-mode and RF applications by Ng
10.1109/iitc.2000.854297
10.1109/IEDM.2000.904281
10.1116/1.582038
10.1149/1.2119600
10.1116/1.579794
10.1116/1.574476

Dates

Type	When
Created	22 years ago (Aug. 6, 2003, 4:41 p.m.)
Deposited	4 months ago (April 20, 2025, 12:17 a.m.)
Indexed	1 month, 1 week ago (July 16, 2025, 8:20 a.m.)
Issued	22 years ago (Aug. 1, 2003)
Published	22 years ago (Aug. 1, 2003)
Published Print	22 years ago (Aug. 1, 2003)

Funders 0

None

BibTeX

@article{Ng_2003, title={Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors}, volume={24}, ISSN={1558-0563}, url={http://dx.doi.org/10.1109/led.2003.815154}, DOI={10.1109/led.2003.815154}, number={8}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Ng, C.H. and Chew, K.W. and Chu, S.F.}, year={2003}, month=aug, pages={506–508} }

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