DOI: 10.1109/jrproc.1957.278528. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

10.1109/jrproc.1957.278528

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IRE (263)

Bibliography

Sah, C., Noyce, R., & Shockley, W. (1957). Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics. Proceedings of the IRE, 45(9), 1228â1243.

Authors 3

Chih-tang Sah (first)
Robert Noyce (additional)
William Shockley (additional)

References 29 Referenced 1,775

10.1103/PhysRev.105.1246
10.1103/PhysRev.94.877
{'key': 'ref4b', 'first-page': '228', 'article-title': 'Germanium rectifier characteristics', 'volume': '83', 'author': 'hall', 'year': '1951', 'journal-title': 'Phys Rev'} / Phys Rev / Germanium rectifier characteristics by hall (1951)
10.1103/PhysRev.87.835
{'key': 'ref10', 'year': '0'} (0)
10.1103/PhysRev.87.387
10.1109/JRPROC.1952.273990
10.1109/JRPROC.1954.274751
{'key': 'ref13', 'year': '0'} (0)
10.1109/JRPROC.1957.278254 / Proc IRE / Surface leakage current in silicon fused junction diodes by culter (1957)
10.1063/1.1722563
{'key': 'ref19', 'year': '0'} (0)
10.1002/j.1538-7305.1956.tb02371.x
10.1007/BF01374566
10.1063/1.1721632
10.1063/1.1722067
{'key': 'ref18e', 'first-page': '287', 'article-title': 'Emission capability of an abrupt p-n transition and its effect upon the conductivity of a semiconductor', 'volume': '1', 'author': 'tolpygo', 'year': '0', 'journal-title': 'Technical Physics'} / Technical Physics / Emission capability of an abrupt p-n transition and its effect upon the conductivity of a semiconductor by tolpygo (0)
{'key': 'ref8', 'year': '0'} (0)
10.1002/j.1538-7305.1956.tb02396.x
10.1109/JRPROC.1956.275172
10.1002/j.1538-7305.1956.tb03830.x
{'key': 'ref9', 'year': '0'} (0)
10.1002/j.1538-7305.1949.tb03645.x
10.1143/JPSJ.11.728
10.1103/PhysRev.94.1161
{'key': 'ref7a', 'first-page': '382', 'article-title': 'Carrier generation and recombination in the space charge region of a p-n junction', 'volume': '1', 'author': 'noyce', 'year': '1956', 'journal-title': 'Bull Amer Phys Soc II'} / Bull Amer Phys Soc II / Carrier generation and recombination in the space charge region of a p-n junction by noyce (1956)
{'key': 'ref7b', 'first-page': '382', 'article-title': 'Interpretation of silicon p-n junction current-voltage characteristics', 'volume': '1', 'author': 'sah', 'year': '1956', 'journal-title': 'Bull Amer Phys Soc II'} / Bull Amer Phys Soc II / Interpretation of silicon p-n junction current-voltage characteristics by sah (1956)
10.1103/PhysRev.93.1204
10.1103/PhysRev.96.28

Dates

Type	When
Created	17 years, 1 month ago (July 18, 2008, 2:37 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:25 p.m.)
Indexed	2 weeks ago (Aug. 7, 2025, 4:44 p.m.)
Issued	67 years, 11 months ago (Sept. 1, 1957)
Published	67 years, 11 months ago (Sept. 1, 1957)
Published Print	67 years, 11 months ago (Sept. 1, 1957)

Funders 0

None

BibTeX

@article{Sah_1957, title={Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics}, volume={45}, ISSN={0096-8390}, url={http://dx.doi.org/10.1109/jrproc.1957.278528}, DOI={10.1109/jrproc.1957.278528}, number={9}, journal={Proceedings of the IRE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Sah, Chih-tang and Noyce, Robert and Shockley, William}, year={1957}, month=sep, pages={1228–1243} }

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