DOI: 10.1109/jproc.2013.2260112. Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects

Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects

10.1109/jproc.2013.2260112

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

Proceedings of the IEEE (263)

Bibliography

Yang, P.-K., Chang, W.-Y., Teng, P.-Y., Jeng, S.-F., Lin, S.-J., Chiu, P.-W., & He, J.-H. (2013). Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects. Proceedings of the IEEE, 101(7), 1732â1739.

Authors 7

Po-Kang Yang (first)
Wen-Yuan Chang (additional)
Po-Yuan Teng (additional)
Shuo-Fang Jeng (additional)
Su-Jien Lin (additional)
Po-Wen Chiu (additional)
Jr-Hau He (additional)

References 38 Referenced 67

{'key': 'ref38', 'article-title': 'Endurance enhancement and high speed set/reset of 50nm generation HfO2 based resistive random access memory cell by intelligent set/reset pulse shape optimization and verify scheme', 'volume': '51', 'author': 'higuch', 'year': '2012', 'journal-title': 'Jpn J Appl Phys'} / Jpn J Appl Phys / Endurance enhancement and high speed set/reset of 50nm generation HfO2 based resistive random access memory cell by intelligent set/reset pulse shape optimization and verify scheme by higuch (2012)
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{'key': 'ref30', 'article-title': 'Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory', 'author': 'chai', 'year': '2010', 'journal-title': 'Int Electron Devices Meeting Tech Dig'} / Int Electron Devices Meeting Tech Dig / Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory by chai (2010)
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Dates

Type	When
Created	12 years, 3 months ago (May 20, 2013, 2:43 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:23 p.m.)
Indexed	3 weeks, 1 day ago (Aug. 3, 2025, 12:07 a.m.)
Issued	12 years, 1 month ago (July 1, 2013)
Published	12 years, 1 month ago (July 1, 2013)
Published Print	12 years, 1 month ago (July 1, 2013)

Funders 0

None

BibTeX

@article{Yang_2013, title={Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects}, volume={101}, ISSN={1558-2256}, url={http://dx.doi.org/10.1109/jproc.2013.2260112}, DOI={10.1109/jproc.2013.2260112}, number={7}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Yang, Po-Kang and Chang, Wen-Yuan and Teng, Po-Yuan and Jeng, Shuo-Fang and Lin, Su-Jien and Chiu, Po-Wen and He, Jr-Hau}, year={2013}, month=jul, pages={1732–1739} }

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