Crossref journal-article
Institute of Electrical and Electronics Engineers (IEEE)
Proceedings of the IEEE (263)
Bibliography

Banerjee, S. K., Register, L. F., Tutuc, E., Basu, D., Kim, S., Reddy, D., & MacDonald, A. H. (2010). Graphene for CMOS and Beyond CMOS Applications. Proceedings of the IEEE, 98(12), 2032–2046.

Authors 7
  1. Sanjay K. Banerjee (first)
  2. Leonard Franklin Register (additional)
  3. Emanuel Tutuc (additional)
  4. Dipanjan Basu (additional)
  5. Seyoung Kim (additional)
  6. Dharmendar Reddy (additional)
  7. Allan H. MacDonald (additional)
References 80 Referenced 76
  1. 10.1038/nphys1055
  2. 10.1038/nature03081
  3. 10.1088/1367-2630/10/4/045018
  4. 10.1103/PhysRevLett.93.036802
  5. 10.1103/Physics.3.1
  6. {'key': 'ref77', 'author': 'tutuc', 'year': '2009', 'journal-title': 'NRI SWAN Annu Rev'} / NRI SWAN Annu Rev by tutuc (2009)
  7. 10.1109/TED.2010.2041280
  8. 10.1103/PhysRevLett.100.206803
  9. {'key': 'ref75', 'year': '0', 'journal-title': 'International Technology Roadmap for Semiconductors'} / International Technology Roadmap for Semiconductors (0)
  10. 10.1038/nature07919
  11. 10.1103/PhysRevLett.16.901
  12. 10.1063/1.2437664
  13. 10.1038/nnano.2008.268
  14. 10.1109/IEDM.2009.5424297
  15. 10.1063/1.3238560
  16. 10.1021/nl902788u
  17. 10.1021/nl803585s
  18. 10.1038/nature07872
  19. 10.1126/science.1150878
  20. 10.1016/j.physe.2007.06.020
  21. 10.1103/PhysRevB.74.041403
  22. 10.1103/PhysRevB.77.041407
  23. 10.1038/nphys384
  24. 10.1103/PhysRevB.78.121401
  25. {'key': 'ref28', 'article-title': 'realization of a high mobility dual-gated graphene field-effect transistor with al<ref_formula> <tex notation="tex">$_{2}{\\hbox {o}}_{3}$</tex></ref_formula> dielectric', 'volume': '94', 'author': 'kim', 'year': '2009', 'journal-title': 'Appl Phys Lett'} / Appl Phys Lett / realization of a high mobility dual-gated graphene field-effect transistor with al<ref_formula> <tex notation="tex">$_{2}{\hbox {o}}_{3}$</tex></ref_formula> dielectric by kim (2009)
  26. 10.1103/PhysRevLett.84.5808
  27. 10.1063/1.2928228
  28. 10.1103/PhysRevB.77.233405
  29. 10.1109/LED.2008.2009362
  30. 10.1021/ja8023059
  31. 10.1103/PhysRevLett.55.2216
  32. 10.1103/PhysRevLett.68.1196
  33. 10.1063/1.1463698
  34. 10.1016/j.ssc.2008.02.024
  35. 10.1126/science.1102896 / Science / Electric field effect in atomically thin carbon films by novoselov (2004)
  36. 10.1021/ja060680r
  37. 10.1021/nl902790r
  38. 10.1016/j.cplett.2007.07.059 / Chem Phys Lett / Soluble graphene derived from graphite fluoride by worsley (2007)
  39. 10.1109/LED.2008.2001179
  40. 10.1063/1.2828338
  41. 10.1126/science.1144657
  42. 10.1109/TED.2008.926593
  43. 10.1126/science.1130681
  44. 10.1103/PhysRevB.75.155115
  45. 10.1126/science.1138020
  46. 10.1109/LED.2009.2028248
  47. 10.1109/LED.2008.2005650 / IEEE Electron Device Lett / Graphene nanoribbon tunnel transistors by qin (2008)
  48. 10.1038/nature08105
  49. 10.1063/1.3364139
  50. 10.1021/nl9039636
  51. 10.1038/nmat2082
  52. 10.1063/1.2841664
  53. 10.1103/PhysRevLett.98.206805
  54. 10.1103/PhysRevB.80.085109
  55. 10.1103/PhysRevB.54.17954
  56. {'key': 'ref12', 'first-page': '818', 'article-title': 'infrared microscopy of joule heating in graphene field effect transistors', 'author': 'myung-ho', 'year': '2009', 'journal-title': 'Proc IEEE Conf Nanotech'} / Proc IEEE Conf Nanotech / infrared microscopy of joule heating in graphene field effect transistors by myung-ho (2009)
  57. 10.1038/nmat1849
  58. 10.1021/jp040650f / J Phys Chem B / Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics by berger (2004)
  59. 10.1016/j.ssc.2007.04.023
  60. 10.1021/nl801827v
  61. 10.1038/nmat2166
  62. 10.1021/nl0728874
  63. 10.1126/science.1171245
  64. 10.1103/PhysRevLett.93.036801
  65. {'key': 'ref4', 'first-page': '331', 'article-title': 'oscillatory magneto-conductance in silicon surfaces', 'volume': '21', 'author': 'fowler', 'year': '1966', 'journal-title': 'Proc Int Conf Semicond Phys'} / Proc Int Conf Semicond Phys / oscillatory magneto-conductance in silicon surfaces by fowler (1966)
  66. 10.1109/LED.2007.891668
  67. 10.1143/JPSJ.67.2857
  68. 10.1103/PhysRevLett.45.494
  69. 10.1103/PhysRevLett.96.256602
  70. 10.1103/PhysRevLett.96.086805
  71. 10.1038/nnano.2008.58
  72. 10.1073/pnas.0704772104
  73. 10.1063/1.2769764
  74. 10.1109/TED.2007.902692
  75. 10.1126/science.1125925
  76. 10.1063/1.2839330
  77. 10.1103/PhysRevB.79.165440
  78. 10.1103/PhysRevLett.97.216803
  79. 10.1109/LED.2007.901680
  80. 10.1109/TED.2007.891872 / IEEE Trans Electron Devices / Performance projections for ballistic graphene nanoribbon field-effect transistors by gengchiau (2007)
Dates
Type When
Created 14 years, 10 months ago (Oct. 19, 2010, 2:36 p.m.)
Deposited 3 years, 8 months ago (Dec. 23, 2021, 9:24 a.m.)
Indexed 14 hours, 3 minutes ago (Aug. 23, 2025, 9:29 p.m.)
Issued 14 years, 8 months ago (Dec. 1, 2010)
Published 14 years, 8 months ago (Dec. 1, 2010)
Published Print 14 years, 8 months ago (Dec. 1, 2010)
Funders 0

None

@article{Banerjee_2010, title={Graphene for CMOS and Beyond CMOS Applications}, volume={98}, ISSN={1558-2256}, url={http://dx.doi.org/10.1109/jproc.2010.2064151}, DOI={10.1109/jproc.2010.2064151}, number={12}, journal={Proceedings of the IEEE}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Banerjee, Sanjay K. and Register, Leonard Franklin and Tutuc, Emanuel and Basu, Dipanjan and Kim, Seyoung and Reddy, Dharmendar and MacDonald, Allan H.}, year={2010}, month=dec, pages={2032–2046} }