DOI: 10.1109/iwjt.2007.4279954. Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation

Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation

10.1109/iwjt.2007.4279954

Crossref proceedings-article

IEEE

2007 International Workshop on Junction Technology (263)

Bibliography

Chi, D. Z., Yao, H. B., Liew, S. L., Tan, C. C., Chua, C. T., Chua, K. C., Li, R., & Lee, S. J. (2007). Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation. 2007 International Workshop on Junction Technology, 81â86.

Authors 8

D.Z. Chi (first)
H.B. Yao (additional)
S.L. Liew (additional)
C.C. Tan (additional)
C. T. Chua (additional)
K. C. Chua (additional)
R. Li (additional)
S. J. Lee (additional)

References 17 Referenced 4

{'key': 'ref10', 'volume': '89 art', 'author': 'yao', 'year': '2006', 'journal-title': 'Appl Phys Lett'} / Appl Phys Lett by yao (2006)
10.1016/0038-1101(66)90127-4
{'key': 'ref12', 'first-page': '1133', 'volume': '122', 'author': 'thurmond', 'year': '1975', 'journal-title': 'SOC'} / SOC by thurmond (1975)
10.1063/1.1659990
10.1016/0038-1101(76)90019-8
{'key': 'ref15', 'first-page': '168', 'author': 'kinoshita', 'year': '2004', 'journal-title': 'Symposium on VLSI Technology'} / Symposium on VLSI Technology by kinoshita (2004)
{'key': 'ref16', 'first-page': '457', 'author': 'zhang', 'year': '2005', 'journal-title': 'Proceedings of ESSDERC'} / Proceedings of ESSDERC by zhang (2005)
10.1063/1.2410241 / Appl Phys Lett by dimoulas (2006)
{'key': 'ref4', 'first-page': '292', 'author': 'kita', 'year': '2003', 'journal-title': 'Extended Abstracts of the 2003 Conference on Solid State Devices and Materials'} / Extended Abstracts of the 2003 Conference on Solid State Devices and Materials by kita (2003)
{'key': 'ref3', 'first-page': '307', 'author': 'whang', 'year': '2004', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig by whang (2004)
10.1109/LED.2004.841442
10.1109/LED.2004.841462 / IEEE Electron Device Lett by zhu (2005)
10.1109/TNANO.2003.820774
10.1016/S0038-1101(02)00033-3
10.1109/VLSIT.2003.1221115 / Dig Tech Papers 2003 Symp VLSI Technology by bai (2003)
{'key': 'ref1', 'first-page': '437', 'author': 'chui', 'year': '2002', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig by chui (2002)
{'journal-title': 'MRS Spring Meeting', 'year': '2004', 'author': 'liew', 'key': 'ref9'} / MRS Spring Meeting by liew (2004)

Dates

Type	When
Created	18 years ago (Aug. 8, 2007, 11:54 a.m.)
Deposited	8 years, 2 months ago (June 17, 2017, 5:49 p.m.)
Indexed	9 months, 4 weeks ago (Oct. 23, 2024, 5:40 a.m.)
Issued	18 years, 2 months ago (June 1, 2007)
Published	18 years, 2 months ago (June 1, 2007)
Published Print	18 years, 2 months ago (June 1, 2007)

Funders 0

None

BibTeX

@inproceedings{Chi_2007, title={Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation}, url={http://dx.doi.org/10.1109/iwjt.2007.4279954}, DOI={10.1109/iwjt.2007.4279954}, booktitle={2007 International Workshop on Junction Technology}, publisher={IEEE}, author={Chi, D.Z. and Yao, H.B. and Liew, S.L. and Tan, C.C. and Chua, C. T. and Chua, K. C. and Li, R. and Lee, S. J.}, year={2007}, month=jun, pages={81–86} }

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